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The influence of SiO2 and SiNx cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750°C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20?ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900°C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiOx grown during annealing which only can be avoided by the usage of SiNx cover layers. [ABSTRACT FROM AUTHOR]

This study presents the imaging and characterization of low-current ion beams in the neutralized state monitored via single crystal YAG:Ce (Y3Al5O12) scintillators. To validate the presented beam diagnostic tool, Faraday cup measurements and test etchings were performed. Argon ions with a typical energy of 1.0 keV were emitted from an inductively coupled radio-frequency (13.56 MHz) ion beam source with total currents of some mA. Different beam properties, such as, lateral ion current density, beam divergence angle, and current density in pulsed ion beams have been studied to obtain information about the spatial beam profile and the material removal rate distribution. We observed excellent imaging properties with the scintillation screen and achieved a detailed characterization of the neutralized ion beam. A strong correlation between the scintillator light output, the ion current density, and the material removal rate could be observed. [ABSTRACT FROM AUTHOR]