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An extension of the spin density functional theory simultaneously accounting for dielectric mismatch between neighboring materials and nonparabolicity corrections originating from interactions between conduction and valence bands is presented. This method is employed to calculate ground state and addition energy spectra of homogeneous and multishell spherical quantum dots. Our calculations reveal that corrections become especially relevant when they come into play simultaneously in strong regimes of spatial confinement.

A consistent extension of local spin density approximation (LSDA) to account for mass and dielectric mismatches in nanocrystals is presented. The extension accounting for variable effective mass is exact. Illustrative comparisons with available configuration interaction calculations show that the approach is also very reliable when it comes to account for dielectric mismatches. The modified LSDA is as fast and computationally low demanding as LSDA. Therefore, it is a tool suitable to study large particle systems in inhomogeneous media without much effort.

Selected configuration interaction (SCI) for atomic and molecular electronic structure calculations is reformulated in a general framework encompassing all CI methods. The linked cluster expansion is used as an intermediate device to approximate CI coefficients B(K) of disconnected configurations (those that can be expressed as products of combinations of singly and doubly excited ones) in terms of CI coefficients of lower-excited configurations where each K is a linear combination of configuration-state-functions (CSFs) over all degenerate elements of K. Disconnected configurations up to sextuply excited ones are selected by Brown's energy formula, Delta E(K) = (E-H(KK))B(K)2/(1-B(K)2), with B(K) determined from coefficients of singly and doubly excited configurations. The truncation energy error from disconnected configurations, Delta E(dis), is approximated by the sum of Delta E(K)s of all discarded Ks. The remaining (connected) configurations are selected by thresholds based on natural orbital concepts. Given a model CI space M, a usual upper bound E(S) is computed by CI in a selected space S, and E(M) = E(S) + Delta E(dis) + delta E, where delta E is a residual error which can be calculated by well-defined sensitivity analyses. An SCI calculation on Ne ground state featuring 1077 orbitals is presented. Convergence to within near spectroscopic accuracy (0.5 cm(-1)) is achieved in a model space M of 1.4 x 10(9) CSFs (1.1 x 10(12) determinants) containing up to quadruply excited CSFs. Accurate energy contributions of quintuples and sextuples in a model space of 6.5 x 10(12) CSFs are obtained. The impact of SCI on various orbital methods is discussed. Since Delta E(dis) can readily be calculated for very large basis sets without the need of a CI calculation, it can be used to estimate the orbital basis incompleteness error. A method for precise and efficient evaluation of E(S) is taken up in a companion paper.

We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed to study the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicate behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law., Comment: 10 pages, 8 figures. Accepted for publication in Journal of Applied Physics (Scheduled 1 January 2003)

We report two new analytical fits of the ground potential energy surface (PES) (2A') and the first excited PES (4A') involved into the title reaction and its reverse, using ab initio electronic structure calculations from papers I and II along with new grids of ab initio points by means of the Second-Order Perturbation Theory on CASSCF wave function (CASPT2 (17,12) G2/aug-cc-pVTZ) reported here (1250 points for the 2A' PES and 910 points for the 4A' PES). Some experimental data were also introduced to better account for the exoergicity and the experimental rate constant at 300 K. The final root-mean-square deviations of the fits were 1.06 and 1.67 kcal/mol for 2A' and the 4A' PESs, respectively, for the NOO Cs-abstraction and insertion regions of the PESs. Thermal rate constants were calculated (300-5000 K) for both the direct and reverse reactions by means of the variational transition state theory with the inclusion of a microcanonical optimized multidimensional tunneling correction, obtaining a very good agreement with the experimental data within all the temperature range. The new analytical 2A' PES presents several stationary points not introduced in previous analytical surfaces, and describes accurately the NO2 (X 2A1) minimum, which seems to be very accessible according to the trajectories run in a preliminary quasiclassical trajectory study. The new analytical 4A' PES has a lower energy barrier than the previous one, which increases significantly the contribution of this PES to the total rate constant at high temperatures. Moreover, the new analytical PESs not only describe accurately the Cs-regions of the NOO system but also the ONO C2v- or near C2v-regions.

An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ...

Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses ∼50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO2 films.