Yuan, Xiaoming, Pan, Dong, Zhou, Yijin, Zhang, Xutao, Peng, Kun, Zhao, Bijun, Deng, Mingtang, He, Jun, Tan, Hark Hoe, and Jagadish, Chennupati
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III–V nanowire arrays, monolithic integration of III–V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III–V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed. [ABSTRACT FROM AUTHOR]