1. Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP.
- Author
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Xinhong Cheng, Dapeng Xu, Qing-Qing Sun, Dawei He, Zhongjian Wang, Yuehui Yu, David Wei Zhang, and Qingtai Zhao
- Subjects
DIELECTRIC films ,THIN films in electrical insulation ,TRANSMISSION electron microscopy ,OPTOELECTRONIC devices ,OPTICAL diffraction ,PARTICLES (Nuclear physics) - Abstract
Al
2 O3 /NbAlO/Al2 O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm2 at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively. [ABSTRACT FROM AUTHOR]- Published
- 2010
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