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Absorption coefficients for some technologically important polymer materials are given in the wavelength range ∼240–170 nm. Absorption coefficients at 193 nm for these polymers show a wide range of values from ∼2×102 cm-1 for polytetrafluoroethylene (Teflon) to ∼4×105 cm-1 for polyimide. The general nature of the optical properties of polymers in the vacuum ultraviolet is also discussed. [ABSTRACT FROM AUTHOR]

A new formula is presented for the etch depth l per pulse of an excimer laser of fluence F. Incremental ablation is defined as the etch depth per pulse after many pulses. We show that l is proportional to F, rather than ln(F). [ABSTRACT FROM AUTHOR]

Laser irradiation of organometallic palladium compounds with an argon ion laser at 351 nm is used to selectively deposit catalytic amounts of palladium on polyimide. Subsequent immersion of the irradiated samples in an electroless copper solution results in copper deposition. Since a few monolayers of palladium are sufficient to catalyze the electroless copper process, fast writing speeds of several centimeters per second are obtained. [ABSTRACT FROM AUTHOR]

Mixtures of poly(methyl methacrylate) and poly(α-methyl styrene) were prepared and their optical absorption coefficients at 193 nm were measured. A study of photoetching rate of these polymeric materials using an ArF excimer laser at 193 nm shows two regions of distinctly different etching characteristics. At relatively high fluences (>300 mJ/cm2) the photoetch rate decreased with increasing absorption in the polymer films, while at lower fluences, an optimum range of absorption coefficients was found to give the maximum photoetching rate. [ABSTRACT FROM AUTHOR]