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Reports that epitaxial layers of GaN[sub x]As[sub 1-x] were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia atmosphere. Existence of a threshold NH[sub 3] pressure indicated by high-resolution x-ray diffraction.

Examines the layer-by-layer deposition of La[sub 1.85]Sr[sub 0.15]CuO[sub x] thin films by pulsed laser ablation. Use of reflection high-energy electron diffraction to monitor the growth of the thin films; Combination of pulsed molecular oxygen with a continuous source of atomic oxygen; Oscillation of the intensity of the specular beam during the deposition.

Describes the growth of epitaxial zinc selenide (ZnSe) films of high crystalline quality using pulse laser deposition (PLD). Pattern of the ZnSe films; Display of Kikuchi lines and bands by the pattern; Presence of free and bound excitons, donor-acceptor pairs by photoluminescence at 10 K of the films.