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Your search keyword '"Celino, M."' showing total 6 results
Start Over Author "Celino, M." Publisher american institute of physics
6 results on '"Celino, M."'

1. Tight binding simulation of the thermodynamic behavior of amorphous silicon.

Author

Rosato, V. and Celino, M.

Subjects
*SILICON, *MONTE Carlo method, *AMORPHOUS substances, *CHEMICAL structure
Abstract

Provides information on a study which analyzed the structure of amorphous silicon which have been generated by using a suitable implementation of the reverse Monte Carlo approach. Generation of amorphous structures; Computational details and thermodynamics results; Structural and dynamic properties; Electronic structure properties; Discussion and conclusion.

Published
1999
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2. Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate

Author

Raiteri, P, Miglio, L, Valentinotti, F, Celino, M, Celino, M., MIGLIO, LEONIDA, Raiteri, P, Miglio, L, Valentinotti, F, Celino, M, Celino, M., and MIGLIO, LEONIDA

Abstract

In this letter, the strain field below uncapped Ge islands of a different shape on a Si(001) substrate is estimated by molecular dynamics simulations at a realistic scale. Comparison to the Fourier transform maps of transmission electron micrographs, recently reported in literature, shows a very good agreement. We point out that the complex deformation in silicon, just below the edges of the Ge islands, is far from being uniaxial. The stress distribution generated by such a strain determines the range of interdot repulsion. (C) 2002 American Institute of Physics.

Published
2002

3. Supersoft elastic parameters and low melting temperature of the C49 phase in TiSi2 by Brillouin scattering and molecular dynamics

Author

Miglio, L, Iannuzzi, M, Celino, M, Pastorelli, R, Bottani, C, Sabbadini, A, Pavia, G, MIGLIO, LEONIDA, Pavia, G., Miglio, L, Iannuzzi, M, Celino, M, Pastorelli, R, Bottani, C, Sabbadini, A, Pavia, G, MIGLIO, LEONIDA, and Pavia, G.

Abstract

In this letter, we show that the polymorphic C49 form of TiSi2 has much smaller elastic constants than those of the C54 bulk-stable structure and that its melting temperature is about 300 degrees C lower. These issues supply intriguing hints in explaining the kinetic advantage of the C49 over the C54 phase and in understanding the role of the elastic energy in the phase transformation from C49 to C54. (c) 1999 American Institute of Physics. [S0003-6951(99)03023-5].

Published
1999

4. Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate.

Author

Raiteri, P., Miglio, Leo, Valentinotti, F., and Celino, M.

Subjects
GERMANIUM, MOLECULAR dynamics, FOURIER transforms
Abstract

In this letter, the strain field below uncapped Ge islands of a different shape on a Si(001) substrate is estimated by molecular dynamics simulations at a realistic scale. Comparison to the Fourier transform maps of transmission electron micrographs, recently reported in literature, shows a very good agreement. We point out that the complex deformation in silicon, just below the edges of the Ge islands, is far from being uniaxial. The stress distribution generated by such a strain determines the range of interdot repulsion. [ABSTRACT FROM AUTHOR]

Published
2002
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5. Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate

Author

F. Valentinotti, Massimo Celino, Leo Miglio, Paolo Raiteri, Raiteri, P, Miglio, L, Valentinotti, F, and Celino, M

Subjects
Materials science, Physics and Astronomy (miscellaneous), Field (physics), Silicon, Condensed matter physics, chemistry.chemical_element, elastic relaxation, Germanium, Substrate (electronics), Atomic units, symbols.namesake, Crystallography, Fourier transform, nanometric island, chemistry, Transmission electron microscopy, symbols, Deformation (engineering)
Abstract

In this letter, the strain field below uncapped Ge islands of a different shape on a Si(001) substrate is estimated by molecular dynamics simulations at a realistic scale. Comparison to the Fourier transform maps of transmission electron micrographs, recently reported in literature, shows a very good agreement. We point out that the complex deformation in silicon, just below the edges of the Ge islands, is far from being uniaxial. The stress distribution generated by such a strain determines the range of interdot repulsion. (C) 2002 American Institute of Physics.

Published
2002

6. Supersoft elastic parameters and low melting temperature of the C49 phase in TiSi2 by Brillouin scattering and molecular dynamics

Author

R. Pastorelli, Massimo Celino, M. Iannuzzi, Leo Miglio, A. Sabbadini, Carlo Enrico Bottani, G. Pavia, Miglio, L, Iannuzzi, M, Celino, M, Pastorelli, R, Bottani, C, Sabbadini, A, and Pavia, G

Subjects
TiSi2, Molecular dynamics, Materials science, Optics, Physics and Astronomy (miscellaneous), Condensed matter physics, business.industry, Brillouin scattering, Melting temperature, Melting point, Elastic energy, business, Kinetic energy
Abstract

In this letter, we show that the polymorphic C49 form of TiSi2 has much smaller elastic constants than those of the C54 bulk-stable structure and that its melting temperature is about 300 degrees C lower. These issues supply intriguing hints in explaining the kinetic advantage of the C49 over the C54 phase and in understanding the role of the elastic energy in the phase transformation from C49 to C54. (c) 1999 American Institute of Physics. [S0003-6951(99)03023-5].

Published
1999

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