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We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500-1000 cm2/Vs. A good correlation is noted between these methods. [ABSTRACT FROM AUTHOR]

Charge generation, transport, and recombination processes in UNIBOND® silicon-on-insulator wafers are studied via an optical second-harmonic generation (SHG) technique. The electric fields at the interfaces vary with time due to charge trapping. The presence of a thin native oxide layer on the top Si film contributes significantly to the SH intensity due to the strong time-dependent electric field generated by electrons transported to the surface. For the thick buried oxide, the electric field is primarily due to carrier trapping at the interface, and it varies with time weakly. The SHG signals depend strongly on the externally applied electric field, which can differentiate the contribution of each interface to the total SH signal. [ABSTRACT FROM AUTHOR]