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Your search keyword '"Bodermann, Bernd"' showing total 2 results
Start Over Author "Bodermann, Bernd" Publisher american institute of physics
2 results on '"Bodermann, Bernd"'

1. Joint Research on Scatterometry and AFM Wafer Metrology.

Author

Bodermann, Bernd, Buhr, Egbert, Danzebrink, Hans-Ulrich, Bär, Markus, Scholze, Frank, Krumrey, Michael, Wurm, Matthias, Klapetek, Petr, Hansen, Poul-Erik, Korpelainen, Virpi, van Veghel, Marijn, Yacoot, Andrew, Siitonen, Samuli, El Gawhary, Omar, Burger, Sven, and Saastamoinen, Toni

Subjects
*ATOMIC force microscopy, *SEMICONDUCTOR wafers, *METROLOGY, *SCANNING electron microscopy, *CALIBRATION, *DATA analysis
Abstract

Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology. Both experimental and modelling methods will be enhanced and different methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems in measurement comparisons. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. One final goal will be the realisation of a wafer based reference standard material for calibration of scatterometers. [ABSTRACT FROM AUTHOR]

Published
2011
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2. A new flexible scatterometer for critical dimension metrology.

Author

Wurm, Matthias, Pilarski, Frank, and Bodermann, Bernd

Subjects
ELLIPSOMETRY, OPTICAL polarization, PHOTOLITHOGRAPHY, NANOSTRUCTURED materials
Abstract

At Physikalisch-Technische Bundesanstalt, the National Metrology Institute of Germany, a new type of deep ultraviolet scatterometer has been developed and set up. The concept of the system is very variable and versatile, so that many different types of measurements, e.g., classical scatterometry, ellipsometric scatterometry, polarization-dependent reflectometry, and ellipsometry can be performed. The main application is the characterization of linewidth/critical dimension (CD), grating period (pitch), and edge profile of periodically nanostructured surfaces mainly, but not only, on photomasks. Different operation wavelength between 840 and 193 nm can be used, giving also access to a variety of different at-wavelength metrology connected with state-of-the-art photolithography. It allows to adapt and to vary the measurand and measurement geometry to optimize the sensitivity and the unambiguity for the measurement problem. In this paper the concept, design, and performance of the system is described in detail. First measurement examples are shown and current and future applications are discussed. [ABSTRACT FROM AUTHOR]

Published
2010
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