Search

We investigate the band bending that occurs at the interface between a disordered organic semiconductor and a metal electrode. Ultraviolet photoemission spectroscopy measurements of thin organic layers on conducting substrates have revealed band bending within a few nanometers of the interface. It has been proposed that this is caused by the transfer of carriers from the substrate into empty states in the organic film. Here we numerically model this process by simulating a film with a given density of states in thermal equilibrium with a metallic substrate. Comparing the model with various published experiments, we demonstrate that the observed band bending can be explained equally well by either energetic relaxation of charge carriers on a timescale longer than photoemission (polaronic relaxation) or by a Gaussian density of states representing energetic disorder. In the former case, our results suggest that the thermal injection of carriers to higher-energy states has led observers to overestimate the relaxation energy by as much as several hundred meV. We also show that band-bending effects due to disorder are expected to significantly reduce the open-circuit voltage in organic photovoltaic devices, and we quantify the relationship between the amount of voltage loss and the degree of disorder. [ABSTRACT FROM AUTHOR]

The 3D nanostructure of organic materials plays a key role in their performance in a broad range of fields, from life sciences to electronics. However, characterising the functionality of their morphologies presents a critical challenge requiring nanometre resolution in 3 dimensions and methods that do not excessively distort the soft matter during measurement. Here we present scanning probe tomography using a commercial Pt-Ir coated tip and controlling the tip loading force to sequentially characterise and remove layers from the surface of a sample. We demonstrate this process on a sample exhibiting a polymer nanowire morphology, which is typically used for organic electronic applications, and present a tomographic reconstruction of the nanoscale charge transport network of the semi-crystalline polymer. Good electrical connectivity in 3D is demonstrated by directly probing the electrical properties of the inter-nanowire charge conduction. [ABSTRACT FROM AUTHOR]

We investigate charge transport in a high-electron mobility polymer, poly(N,N-bis 2-octyldodecyl-naphthalene-1,4,5,8-bis dicarboximide-2,6-diyl-alt-5,5-2,2-bithiophene) [P(NDI2OD-T2), Polyera ActivInk™ N2200]. Time-of-flight measurements reveal electron mobilities approaching those measured in field-effect transistors, the highest ever recorded in a conjugated polymer using this technique. The modest temperature dependence and weak dispersion of the transients indicate low energetic disorder in this material. Steady-state electron-only current measurements reveal a barrier to injection of about 300 meV. We propose that this barrier is located within the P(NDI2OD-T2) film and arises from molecular orientation effects. [ABSTRACT FROM AUTHOR]

The x-ray stability of photodiodes made of poly(9,9-di-n-octylfluorene-co-benzothiadiazole):perylene diimide, poly[2,7-(9,9-di-n-octylfluorene)-co-(1,4-phenylene-[(4-sec-butylphenyl)imino]-1,4-phenylene)]:perylene diimide and poly(3-hexylthiophene):([6,6]-phenylC61-butyric acid methyl ester) (P3HT:PCBM) blends has been examined up to lifetime doses equivalent to those used in medical x-ray digital imaging applications. Dark currents and external quantum efficiencies (EQEs) are not significantly affected after exposure to 500 Gy. Only in the case of P3HT:PCBM is a significant loss in EQE (17% of the initial value) observed. Possible reasons for the observed changes are proposed. When a scintillation layer is attached to the devices, a linear dependence of the photocurrent on the x-ray dose rate is observed for the three material systems. [ABSTRACT FROM AUTHOR]

The effects of x-ray irradiation on the electrical performance of organic thin film transistors (OTFTs) have been examined up to equivalent lifetime doses for medical digital x-ray imaging backplanes. Transistor performance metrics have been assessed before and after exposures up to 500 Gy for bottom-gate, bottom-contact OTFTs of p-channel polytriarylamine and polyfluorene semiconductors. There is no discernible degradation in device performance for either material and no indication of the creation of additional trap states. In situ measurements indicate that x-ray exposure tends to reverse undesirable shifts in the threshold voltage due to prolonged atmospheric exposure and bias stress. [ABSTRACT FROM AUTHOR]