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We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol.% oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 lm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea=21.6 kJ/mol and Ao=2.3 × 10-17 m2/s for Au- 1 vol.% ZnO and Ea=12.7 kJ/mol and Ao=3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol.% ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination. [ABSTRACT FROM AUTHOR]

The electrical resistivity of electron beam codeposited gold and zinc oxide (Au-ZnO) films was investigated over the full composition range. The electrical resistivity was shown to increase monotonically with increasing ZnO content, with three characteristic regimes of behavior associated primarily with (1) grain boundary electron scattering due to grain refinement at ZnO volume fractions below 0.3, (2) percolation theory for ZnO volume fractions at and above the percolation threshold (fc = 0.85), and (3) a transition region between these where it was proposed that resistivity was influenced by the formation of Au-Zn complexes due to an oxygen deficiency in the deposited ZnO. The electrical resistivity of the composite films remained below 100 μΩ cm for ZnO volume fractions below 0.5. A model combining the general effective media equation and Mayadas-Shatzkes grain boundary electron scattering model was shown to generally describe the composition dependence of electrical resistivity for the investigated oxide dispersion hardened metal-matrix composite thin films. [ABSTRACT FROM AUTHOR]

A correction to the article "Grain Boundary Diffusivity of Ni in Au Thin Films and the Associated Degradation in Electrical Contact Resistance Due to Surface Oxide Film Formation" that was published in a previous issue is presented.

The low temperature diffusion from a nickel strike layer through varying thickness films of gold, a common electrical contact overlayer, was characterized and correlated to changes in electrical contact resistance (ECR). The diffusivity of Ni in Au was determined by the surface accumulation method (type C kinetics) for Au film thicknesses of 280 and 994 nm at an annealing temperature of 150 °C over a 32 day period. X-ray photoelectron spectroscopy (XPS) was used to determine the rate of Ni surface accumulation. The average product of grain boundary width and diffusivity for Ni in polycrystalline Au was calculated to be δbDb≅2.0 × 10-22cm3s using the Hwang-Balluffi model, and δbDb≅2.5×10-22cm3s using the Ma-Balluffi model. ECR measurements were made in parallel to surface accumulation measurements, revealing a correlation between ECR and Ni-O surface concentration; ECR values for both film thicknesses increased by 1 to 2 orders of magnitude at saturation coverage. Film cross-sections were extracted using focused ion beam milling and analyzed via scanning transmission electron microscopy coupled with energy dispersive X-ray spectroscopy after 32 days of annealing, enabling a direct observation of the composition and thickness of the accumulated Ni-O layer, which was approximately 3 nm thick. [ABSTRACT FROM AUTHOR]