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Presents a study which examined the dependence of impurity incorporation on the crystallographic orientation during metalorganic vapor phase epitaxy of III-V compound semiconductors. Details on studies of the impurity doping in semiconductor epitaxy; Materials and methods used; Effect of the growth rate on impurity incorporation; Mathematical expression of the carrier and impurity concentrations; Measurement of the dependence of zinc effective distribution coefficient.

The ordered structure occurring in AlGaInP quaternary alloys grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction measurements. The order spot became strong as the Al content increased, and was observed only for the (1/2 ∼(1/2) 1/2) diffraction, corresponding to CuPt-type (111)B ordering. Kinematical analysis implies that the full width at half maximum of the order spot is strongly affected by the antiphase boundary, whereas the integrated intensity is not. [ABSTRACT FROM AUTHOR]

Ordered structure in GaInP alloys grown on (001) GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction and transmission electron microscopy. We found a broad peak of CuPt I type (111)B ordering in the x-ray measurements. X-ray results gave the total amount of ordered region and the average size of each ordered domain. Room-temperature photoluminescence peak energy anomalies were found to be related to the amount of the order phase. [ABSTRACT FROM AUTHOR]