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Very recently, boron nitride atomic chains were successively prepared and observed in experiments [O. Cretu et al., ACS Nano 8, 11950 (2015)]. Herein, using a first-principles technique, we study the magnetism and spin-dependent electronic transport properties of three types of BN atomic chains whose magnetic moment is 1 µB for BnNn-1, 2 µB for BnNn, and 3 µB for BnNn+1 type atomic chains, respectively. The spin-dependent electronic transport results demonstrate that the short BnNn+1 chain presents an obvious spin-filtering effect with high spin polarization ratio (>90%) under low bias voltages. Yet, this spin-filtering effect does not occur for long BnNn+1 chains under high bias voltages and other types of BN atomic chains (BnNn-1 and BnNn). The proposed short BnNn+1 chain is predicted to be an effective low-bias spin filters. Moreover, the length-conductance relationships of these BN atomic chains were also studied. [ABSTRACT FROM AUTHOR]

Using results from atomic spectroscopy, we show that there are two types of flat-planes conditions. The first type of flat-planes condition occurs when the energy as a function of the number of electrons of each spin, Nα and Nβ, has a derivative discontinuity on a line segment where the number of electrons, Nα + Nβ, is an integer. The second type of flat-planes condition occurs when the energy has a derivative discontinuity on a line segment where the spin polarization, Nα - Nβ, is an integer, but does not have a discontinuity associated with an integer number of electrons. Type 2 flat planes are rare-we observed just 15 type 2 flat-planes conditions out of the 4884 cases we tested-but their mere existence has implications for the design of exchange-correlation energy density functionals. To facilitate the development of functionals that have the correct behavior with respect to both fractional number of electrons and fractional spin polarization, we present a dataset for the chromium atom and its ions that can be used to test new functionals. [ABSTRACT FROM AUTHOR]

A key element in the density functional embedding theory (DFET) is the embedding potential. We discuss two major issues related to the embedding potential: (1) its non-uniqueness and (2) the numerical difficulty for solving for it, especially for the spin-polarized systems. To resolve the first issue, we extend DFET to finite temperature: all quantities, such as the subsystem densities and the total system's density, are calculated at a finite temperature. This is a physical extension since materials work at finite temperatures. We show that the embedding potential is strictly unique at T > 0. To resolve the second issue, we introduce an efficient iterative embedding potential solver. We discuss how to relax the magnetic moments in subsystems and how to equilibrate the chemical potentials across subsystems. The solver is robust and efficient for several non-trivial examples, in all of which good quality spin-polarized embedding potentials were obtained. We also demonstrate the solver on an extended periodic system: iron body-centered cubic (110) surface, which is related to the modeling of the heterogeneous catalysis involving iron, such as the Fischer-Tropsch and the Haber processes. This work would make it efficient and accurate to perform embedding simulations of some challenging material problems, such as the heterogeneous catalysis and the defects of complicated spin configurations in electronic materials. [ABSTRACT FROM AUTHOR]

Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3×106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application. [ABSTRACT FROM AUTHOR]

A method for precise manipulation of non-thermal nuclear spin polarization by switching a RF-field is presented. The method harnesses adiabatic correlation of spin states in the rotating frame. A detailed theory behind the technique is outlined; examples of two-spin and three-spin systems prepared in a non-equilibrium state by Para-Hydrogen Induced Polarization (PHIP) are considered. We demonstrate that the method is suitable for converting the initial multiplet polarization of spins into net polarization: compensation of positive and negative lines in nuclear magnetic resonance spectra, which is detrimental when the spectral resolution is low, is avoided. Such a conversion is performed for real two-spin and three-spin systems polarized by means of PHIP. Potential applications of the presented technique are discussed for manipulating PHIP and its recent modification termed signal amplification by reversible exchange as well as for preparing and observing long-lived spin states. [ABSTRACT FROM AUTHOR]

We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along 〈001〉 direction showed higher MR compared to 〈̄110〉 direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along 〈001〉 and 〈̄110〉 crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions. [ABSTRACT FROM AUTHOR]

We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures. [ABSTRACT FROM AUTHOR]

Antiferromagnets are promising materials for memory devices owing to their ultrafast spin dynamics. For efficient control of antiferromagnets, a direct interaction between the spin current and local magnetization of the sublattice is required. In this study, we demonstrated that a short-pulsed spin current can induce fast dynamics of metallic antiferromagnets of PtMn and IrMn via spin-transfer torque on the magnetization of sublattices. We employed two methods to generate a short-pulsed spin current, namely ultrafast demagnetization of a ferromagnet and optical spin polarization of a heavy metal. The magnetization dynamics were measured using the time-resolved magneto-optical Kerr effect and were analyzed using the Landau–Lifshitz–Gilbert equation. Our results provide important evidence of the direct interaction between the magnetization of antiferromagnets and spin current. [ABSTRACT FROM AUTHOR]

In a three-site representation, we study a spin polarization transfer from radical pair spins to a nearby electron or nuclear spin. The quantum dynamics of the radical pair spins is governed by a constant exchange interaction between the radical pair spins which have different Zeeman frequencies. Radical pair spins can recombine to the singlet ground state or to lower energy triplet states. It is then shown that the coherent dynamics of the radical pair induces spin polarization on the nearby third spin in the presence of a magnetic field. The spin polarization transfer depends on the difference between Zeeman frequencies, the singlet and triplet recombination rates, and on the exchange and dipole-dipole interactions between the different spins. In particular, the sign of the polarization depends on the exchange coupling between radical pair spins and also on the difference between singlet and triplet recombination rate constants. [ABSTRACT FROM AUTHOR]

We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene. [ABSTRACT FROM AUTHOR]

We present the switching characteristics of a spin-transfer device that incorporates a perpendicularly magnetized spin-polarizing layer with an in-plane magnetized free and fixed magnetic layer, known as an orthogonal spin transfer spin valve device. This device shows clear switching between parallel (P) and antiparallel (AP) resistance states and the reverse transition (AP ! P) for both current polarities. Further, hysteretic transitions are shown to occur into a state with a resistance intermediate between that of the P and AP states, again for both current polarities. These unusual spin-transfer switching characteristics can be explained within a simple macrospin model that incorporates thermal fluctuations and considers a spin-polarized current that is tilted with respect to the free layer's plane, due to the presence of the spin-transfer torque from the polarizing layer. [ABSTRACT FROM AUTHOR]

Using non-equilibrium Green's function, we study the spin-dependent electron transport properties in a zigzag silicene nanoribbon. To produce and control spin polarization, it is assumed that two ferromagnetic strips are deposited on the both edges of the silicene nanoribbon and an electric field is perpendicularly applied to the nanoribbon plane. The spin polarization is studied for both parallel and anti-parallel configurations of exchange magnetic fields induced by the ferromagnetic strips. We find that complete spin polarization can take place in the presence of perpendicular electric field for anti-parallel configuration and the nanoribbon can work as a perfect spin filter. The spin direction of transmitted electrons can be easily changed from up to down and vice versa by reversing the electric field direction. For parallel configuration, perfect spin filtering can occur even in the absence of electric field. In this case, the spin direction can be changed by changing the electron energy. Finally, we investigate the effects of nonmagnetic Anderson disorder on spin dependent conductance and find that the perfect spin filtering properties of nanoribbon are destroyed by strong disorder, but the nanoribbon retains these properties in the presence of weak disorder. [ABSTRACT FROM AUTHOR]

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - tMgO plot (RA: resistance area product, tMgO: thickness of MgO tunnel barrier) in CoFe/MgO/n+-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (PSi) in Si. The estimated absolute values of PSi using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/ n+-Si junction electrode is important. [ABSTRACT FROM AUTHOR]

Domain structures and magnetization reversal of (Co/Pd) and (CoFeB/Pd) multilayers with 7 and 14 repeats were investigated. The Co-based multilayers show much larger coercivities, a better squareness, and a sharper magnetization switching than CoFeB-based multilayers. From magnetic force microscopy observations, both structures show strong reduction in domains size as the number of repeats increases but the magnetic domains for Co-based multilayers are more than one order of magnitude larger than for CoFeB-based multilayers. By imaging domains at different times, breaks in the (CoFeB/Pd) multilayer stripes were observed within only few hours, while no change could be seen for (Co/Pd) multilayers. Although CoFeB single layers are suitable for magnetoresistive devices due to their large spin polarization and low damping constants, their lamination with Pd suffers mainly from thermal instability. [ABSTRACT FROM AUTHOR]

Nano-contact magnetoresistance (NCMR) spin-valves (SVs) using an AlOx nano-oxide-layer (NOL) have numerous nanocontacts in the thin AlOx oxide layer. The NCMR theoretically depends on the bulk scattering spin asymmetry (β) of the ferromagnetic material in the nanocontacts. To determine the relationship between NCMR and β, we investigated the dependence of NCMR on the composition of the ferromagnetic material Co1-xFex. The samples were annealed at 270 °C and 380 °C to enhance the MR ratio. For both annealing temperatures, the magnetorsistance ratio in the low-resistance area product region at less than 1 Ω µm² was maximized for Co0.5Fe0.5. To evaluate β exactly, we fabricated current-perpendicular-to-plane giant magnetoresistance SVs with Co1-xFex/Cu/Co1-xFex layers and used Valet and Fert's theory to solve the diffusion equation of the spin accumulation for a ferromagnetic layer/non-ferromagnetic layer of five layers with a finite diffusion length. The evaluated β for Co1-xFex was also maximized for Co0.5Fe0.5. Additionally, to determine the difference between the experimental MR ratio of NCMR SVs and the theoretical MR ratio, we fabricated Co0.5Fe0.5 with oxygen impurities and estimated the decrease in β with increasing oxygen impurity concentration. Our Co0.5Fe0.5 nano-contacts fabricated using ion-assisted oxidation may contain oxygen impurities, and the oxygen impurities might cause a decrease in Eβ and the MR ratio. [ABSTRACT FROM AUTHOR]

The current-perpendicular-to-plane giant magnetoresistance (MR) devices with full-Heulser Co2MnAl (CMA) electrodes and a Ag spacer have been simulated to investigate the relationship between the transport properties and the structural disordering of electrodes by performing firstprinciples electronic structure and ballistic transport calculations. The CMA electrode has nearly negligible interfacial roughness in both L21 and B2-types. The transmission coefficient Tσ (E, ⃗k//) is found strongly dependent on the structures of the trilayers for different structural CMA electrodes. High majority-spin electron conductance in the magnetization parallel configuration turns up in the entire ⃗k-plane and the MR ratio reaches as high as over 90% for the B2-based CMA/Ag/CMA magnetic trilayers. In contrast, the L21-based one has ~60% MR ratio resulting from much lower bulk spin-asymmetry coefficient (β), which might be caused by the vibrational spin-polarization in each atomic layer adjacent to the interfaces in the corresponding model. The patterns of Tσ (E, ⃗k//) indicates that B2-based CMA/Ag/CMA magnetic trilayers are promising giant magnetoresistance junctions with high performance. [ABSTRACT FROM AUTHOR]

We study ballistic transport of Dirac fermions through silicene barriers, of width d, with an exchange field M and metallic gates above them that provide tunable potentials of height U. Away from the Dirac point (DP), the spin- and valley-resolved conductances, as functions of U, exhibit resonances and close to it a pronounced dip that becomes a transport gap when an appropriate electric field Ez is applied. The charge conductance gc of such a junction changes from oscillatory to a monotonically decreasing function of d beyond a critical Ez. This change of gc can be used to realize electric-field-controlled switching. The field M splits each resonance of gc in two spin-resolved peaks. The spin ps and valley pv polarizations of the current near the DP increase with Ez or M and become nearly perfect above certain of their values. We also show that ps and pv can be inverted either by reversing the polarity of U or the direction of M. For two barriers, there is no splitting in gc when the fields M are in opposite directions. Most of these phenomena have no analogs in graphene. [ABSTRACT FROM AUTHOR]

Chemically synthesized graphene contains large number of defects which act as localized spin moments at the defect sites. Cobalt nanosheets of variable thickness are grown on graphene surface to investigate spin/magnetotransport through graphene sheets containing large number of localized spins. Negative magnetoresistance (MR) is observed over the entire temperature range (5-300 K) for thin cobalt sheets, while a cross-over from negative to positive MR with increasing temperature is noticed for thicker cobalt sheets. The observed MR results are explained on the basis of recently reported spin polarization effect in graphene due to the presence of ferromagnetic atoms on the surface considering a spin valve like Co/graphene/Co nanostructures. [ABSTRACT FROM AUTHOR]

Time-resolved Faraday rotation measurements have proved transformative in the investigation of spin dynamics in semiconductors. In materials with spin lifetimes which are on the order of, or greater than, the laser repetition time, the collective effect of spin polarization due to the whole pump pulse train becomes important. Here, we discuss a relative phase shift which results from these spins. We derive and experimentally validate a closed-form expression which describes this phase shift and characterize it throughout parameter space. A spin lifetime measurement based on this phase shift is described, and we discuss situations in which the model used must be augmented to be applicable. [ABSTRACT FROM AUTHOR]

We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved. [ABSTRACT FROM AUTHOR]

The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds. [ABSTRACT FROM AUTHOR]

Ab initio calculations combining density-functional theory and nonequilibrium Green's function are performed to investigate the effects of either single B atom or single N atom dopant in zigzag-edged graphene nanoribbons (ZGNRs) with the ferromagnetic state on the spin-dependent transport properties and thermospin performances. A spin-up (spin-down) localized state near the Fermi level can be induced by these dopants, resulting in a half-metallic property with 100% negative (positive) spin polarization at the Fermi level due to the destructive quantum interference effects. In addition, the highly spin-polarized electric current in the low bias-voltage regime and single-spin negative differential resistance in the high bias-voltage regime are also observed in these doped ZGNRs. Moreover, the large spin-up (spin-down) Seebeck coefficient and the very weak spin-down (spin-up) Seebeck effect of the B(N)-doped ZGNRs near the Fermi level are simultaneously achieved, indicating that the spin Seebeck effect is comparable to the corresponding charge Seebeck effect. [ABSTRACT FROM AUTHOR]

Using nonequilibrium Green's function in combination with the spin-polarized density functional theory, the spin-dependent transport properties of boron and nitrogen doped zigzag graphene nano-ribbons (ZGNRs) heterojunctions with single or double edge-saturated hydrogen have been investigated. Our results show that the perfect spin-filtering effect (100%), rectifying behavior and negative differential resistance can be realized in the ZGNRs-based systems. And the corresponding physical analysis has been given. [ABSTRACT FROM AUTHOR]

Growth of pure phase delafossite CuFeO2 thin films on Al2O3 (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15?eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO2 films demonstrated a phase transition at TC ≈ 15 ± 1?K, which agrees with the first antiferromagnetic transition at 14?K in the bulk CuFeO2. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis. [ABSTRACT FROM AUTHOR]

The so-called half-metallic magnets have been proposed as good candidates for spintronic applications due to the feature of exhibiting a hundred percent spin polarization at the Fermi level. Such materials follow the Slater-Pauling rule, which relates the magnetic moment with the valence electrons in the system. In this paper, we study the bulk polycrystalline half-metallic Fe2MnSi Heusler compound replacing Si by Ga to determine how the Ga addition changes the magnetic, the structural, and the half-metal properties of this compound. The material does not follow the Slater-Pauling rule, probably due to a minor structural disorder degree in the system, but a linear dependence on the magnetic transition temperature with the valence electron number points to the half-metallic behavior of this compound. [ABSTRACT FROM AUTHOR]

CuCrO2-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO2 and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5V. The phenomena indicate that the CuCrO2-based heterojunction is a promising candidate for low-power semiconductor spintronic devices. [ABSTRACT FROM AUTHOR]

We consider the role of quantum mechanics in a specific coherent control scenario, designing a "coherent control interferometer" as the essential tool that links coherent control to quantum fundamentals. Building upon this allows us to rigorously display the genuinely quantum nature of a generalized weak-field coherent control scenario (utilizing 1 vs. 2 photon excitation) via a Bell-CHSH test. Specifically, we propose an implementation of "quantum delayed-choice" in a bichromatic alkali atom photoionization experiment. The experimenter can choose between two complementary situations, which are characterized by a random photoelectron spin polarization with particle-like behavior on the one hand, and by spin controllability and wave-like nature on the other. Because these two choices are conditioned coherently on states of the driving fields, it becomes physically unknowable, prior to measurement, whether there is control over the spin or not. [ABSTRACT FROM AUTHOR]

Within the context of spin polarized conceptual density functional theory, the spin polarized linear response functions are introduced both in the [N, Ns ] and [Nα, Nβ] representations. The mathematical relations between the spin polarized linear response functions in both representations are examined and an analytical expression for the spin polarized linear response functions in the [Nα, Nβ] representation is derived. The spin polarized linear response functions were calculated for all atoms up to and including argon. To simplify the plotting of our results, we integrated χ(r, r') to a quantity χ(r, r'), circumventing the θ and φ dependence. This allows us to plot and to investigate the periodicity throughout the first three rows in the periodic table within the two different representations. For the first time, χαβ(r, r'), χβα(r, r'), and χSS(r, r') plots have been calculated and discussed. By integration of the spin polarized linear response functions, different components to the polarisability, ααα, ααβ, αβα, and αββ have been calculated. [ABSTRACT FROM AUTHOR]

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN. [ABSTRACT FROM AUTHOR]

Motivated by the theoretical calculations that Fe3-xMnxSi can simultaneously exhibit a high spin polarization with a high Curie temperature to be applied in spintronic devices, and in order to further study the effect of Mn contents on the physical properties of Fe3-xMnxSi, we have investigated the effect of Mn substitution on the transport properties of epitaxial Fe3-xMnxSi (0 ≤ x ≤ 1) films systematically. The Fe3-xMnxSi films were epitaxially grown on MgO(001) plane with 45° rotation. The magnetization for various x shows enhanced irreversibility, implying the antiferromagnetic ordering induced by the substitution of Mn. A metal-semiconductor crossover was observed due to the enhanced disorders of interactions and the local lowering of symmetry induced by the substitution of Mn. The single-domain state in the Fe3-xMnxSi films leads to twofold symmetric curves of the anisotropic magnetoresistance and planar Hall resistivity. [ABSTRACT FROM AUTHOR]

A transmission-grating-sampled circular dichroism absorption spectroscopy (TGS-CDAS) and its theoretical model are developed sensitively to measure decay dynamics of a transient spin grating (TSG). A binary transmission grating with the same period as TSG is set behind TSG. It allows only a same small part of each period in TSG measured by circular dichroism absorption effect of a probe. In this way, the zero average of spin-dependent effects measured over a whole period in TSG is avoided so that TGS-CDAS has a high sensitivity to spin evolution in TSG. Spin transport experiments are performed on GaAs/AlGaAs quantum wells. Experimental results prove the feasibility and reliability of TGS-CDAS. [ABSTRACT FROM AUTHOR]

The spin–orbit torques (SOTs) induced by spin currents in the heavy metal/ferromagnet (HM/FM) bilayer are of great importance for enabling nonvolatile, low power consumption spintronics. In the standard HM/FM bilayers, only the spin current at the interface is employed for implementing SOTs. Another part of the spin current with the opposite spin polarization, which is generated at the opposite side of the HM layer, is supposably not put into action. Here, we will show the experimental feasibility of utilizing spin currents from the dual surfaces of the HM Pt layer. In particular, through synthesizing perpendicularly magnetized Fe 1 − x 1 Tb x 1 /Pt/ Fe 1 − x 2 Tb x 2 trilayers, we demonstrate that spin currents at the dual surfaces of the Pt layer can be simultaneously used to deterministically switch the perpendicular magnetization vectors of the neighboring Fe1-xTbx layers, through the current-induced SOTs. Based on the second harmonic measurement, we further quantify the enhanced efficiency of the current-induced SOTs. A three-dimensional spintronic device that can host an exponentially increased magnetization states is also demonstrated. Our results could be important for enabling more energy efficient spin-orbitronics that could be used in multistate memory and spin logic devices. [ABSTRACT FROM AUTHOR]

As Moore's law is gradually losing its effectiveness, the development of alternative high-speed and low-energy–consuming information technology with postsilicon-advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including magnetoresistive random access memory (MRAM), radiofrequency sensors, microwave generators, and neuromorphic computing networks. The emergence of two-dimensional (2D) materials brings opportunities for MTJs based on 2D materials, which have many attractive characteristics and advantages. In particular, the recently discovered intrinsic 2D ferromagnetic materials with high spin polarization hold the promise for next-generation nanoscale MTJs. Various 2D materials, such as semimetallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2, and some other recently emerged 2D materials, are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs; review the current progress made with 2D MTJs; briefly comment on work with some specific 2D materials and highlight how they address the current challenges in MTJs; and, finally, offer an outlook and perspective of 2D MTJs. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics applications. By performing extensive density functional theory calculations combined with the nonequilibrium Green's function method, we explore the spin-dependent transport properties of a magnetic tunnel junction, in which a non-polar SrTiO3 barrier layer is sandwiched between two Heusler alloy Co2MnSi electrodes. Theoretical results clearly reveal that the near perfect spin-filtering effect appears in the parallel magnetization configuration. The transmission coefficient in the parallel magnetization configuration at the Fermi level is several orders of magnitude larger than that in the antiparallel magnetization configuration, resulting in a huge tunneling magnetoresistance (i.e. > 106), which originates from the coherent spin-polarized tunneling, due to the half-metallic nature of Co2MnSi electrodes and the significant spin-polarization of the interfacial Ti 3d orbital. [ABSTRACT FROM AUTHOR]

Spin–orbit torque provides a highly efficient way to achieve current-induced magnetization switching, which relies on charge-to-spin conversion of the spin source layer. However, in the conventional heavy metal/ferromagnetic layer, the generated spin–orbit torque is limited to in-plane, which cannot deterministically switch the perpendicularly magnetized ferromagnets, and thus impedes practical application for high-density magnetic memory. In this work, deterministic switching of perpendicular magnetization is achieved in the SrRuO3/WTe2 bilayer structure, which is attributed to the out-of-plane spin polarization originated from the van der Waals material WTe2. The out-of-plane spin polarization is further confirmed by the shift of the anomalous Hall effect loop. Spin polarization matrix analysis indicates that the reduced crystal symmetry in WTe2 is responsible for the out-of-plane spin polarization. [ABSTRACT FROM AUTHOR]

We study the interplay of superconductivity, ferromagnetism, and the Kondo effect in a single system, using vertical geometry and planar magnetic tunnel junction devices, in which a thin CoFe layer is inserted in the middle of the MgO layer, forming a quantum dot like system. It is shown that the Kondo resonance peak at the zero bias coexists with a sharp Bardeen-Cooper-Schrieffer gap on double tunnel junctions, Al/MgO/CoFe nanodot/MgO/Al. It is also found that the competition between superconductivity and the Kondo effect is tunable with magnetic fields and the temperature. The coexistence of Kondo screening and superconductivity survives long range magnetic order in CoFe nanodots with a spin polarization of 0.2; however, it disappears when the CoFe layer becomes a continuous film with a spin polarization of 0.5. The competition between SC and the Kondo effect in the presence of magnetic ordering opens exciting possibilities to control information in nanomagnets. [ABSTRACT FROM AUTHOR]

Triplet excitons in organic materials are nonradiative and tightly bound as self-trapped ones due to the strong electron-lattice coupling. They exhibit a finite radius and long lifetime and so can be regarded as the isolated quantum dots. In this work, we theoretically demonstrate that the spin polarization of self-trapped triplet excitons can be coherently controlled by the short circularly polarized laser pulses, acting as a helicity-dependent all-optical switching effect. Such a switching can be achieved within dozens of femtoseconds and conducted in a reproducible manner. The pulse parameter dependence on the switching ratio is further investigated. Our calculation provides a theoretical foundation for exploring the ultrafast all-optical recording and information processing technique based on the organic materials. [ABSTRACT FROM AUTHOR]

Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La0.7Sr0.3MnO3 bottom electrode, a BaTiO3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom. [ABSTRACT FROM AUTHOR]

Isotropic spin analysis is a key step in spintronics and could be useful in quantum information, which usually requires light as an essential component. It has not yet been realized in a solid-state device. Here, we propose an isotropic all electrical spin analyzer designed from a quantum ring with spin–orbit couplings by analytically and numerically modeling how the charge transmission rate depends on the polarization of the incident spin. The spin transport features are also demonstrated to be robust against ring structure defects, disorder, and a bias between the two leads at finite temperature in the nanoscale ring. Similar to the light polarizer/analyzer, this interesting two-dimensional electron system can be designed as a spin filter, spin polarizer, and a general spin analyzer with high resolution by simply tuning the spin–orbit couplings, which paves the way for realizing the tunable and integrable spintronics devices. [ABSTRACT FROM AUTHOR]

We show a topological spin texture called "bimeronium" in magnets with in-plane magnetization. It is a topological counterpart of skyrmionium in perpendicularly magnetized magnets and can be seen as a combination of two bimerons with opposite topological charges. We report the static structure and spin-orbit-torque-induced dynamics of an isolated bimeronium in a magnetic monolayer with frustrated exchange interactions. We study the anisotropy and magnetic field dependences of a static bimeronium. We also explore the bimeronium dynamics driven by the damping-like spin-orbit torque. We find that the bimeronium shows steady rotation when the spin polarization direction is parallel to the easy axis. Moreover, we demonstrate the annihilation of the bimeronium when the spin polarization direction is perpendicular to the easy axis. Our results are useful for understanding the fundamental properties of bimeronium structures and may offer an approach to build bimeronium-based spintronic devices. [ABSTRACT FROM AUTHOR]