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Your search keyword '"Ye, C."' showing total 2 results
Start Over Author "Ye, C." Topic silicon Publisher american institute of physics
2 results on '"Ye, C."'

1. Influence of annealing on the structural and optical properties of ZnO:Tb thin films.

Author

Teng, X. M., Fan, H. T., Pan, S. S., Ye, C., and Li, G. H.

Subjects
ZINC oxide thin films, THIN films, TERBIUM, SILICON, MAGNETRONS, SPUTTERING (Physics), X-ray photoelectron spectroscopy, X-ray spectroscopy
Abstract

The influence of annealing on the morphological, structural, and optical properties of ZnO:Tb thin films on Si substrate grown by magnetron cosputtering is investigated. It has been found that the ZnO:Tb thin films with structures of tetrapod and screwlike nanorod are formed after annealing at temperature of 950 °C. X-ray photoelectron spectroscopy, energy dispersive spectroscopy, and Raman analyses prove that the tetrapod-aiguille zinc oxide (T-A-ZnO) and the screwlike nanorods are composed of Zn, Tb, and O elements. The photoluminescence spectra of the ZnO:Tb thin films with the T-A-ZnO structure and the screwlike nanorods are featured with two ultraviolet emission peaks and one strong green emission band, and the photoluminescence intensity increases with increasing annealing temperature. The surface defects in the T-A-ZnO structure and the screwlike nanorods are considered to be responsible for enhanced green emission in the annealed ZnO:Tb thin films. [ABSTRACT FROM AUTHOR]

Published
2006
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2. Determination of Ultra-shallow Junction (USJ) Quality with an Elastic Material Probe (EM-Probe).

Author

Benjamin, Mark C., Hillard, Robert J., and Ye, C. Win

Subjects
SEMICONDUCTOR junctions, ION bombardment, COLLISIONS (Nuclear physics), FOCUSED ion beams, SILICON, PHYSICAL sciences
Abstract

The formation of Ultra-Shallow Junctions (USJ) for Source-Drain extension regions is critical to device performance for current and future generation IC technology. Multiple process steps are involved in their formation: which can include pre-amorphization, ion implantation and anneal. Even strained silicon and SiGe are used as materials to form USJs. The primary goal is to achieve low sheet resistances with shallow junction depths. Sheet resistance alone is not enough to properly qualify the junction. It is also important to ensure that the junctions formed are of high quality. In this paper, we explore several methods that can be used to assess the quality of pn junctions formed by USJ processes. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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