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Presents a study that investigated the influence of electron temperature and of bias on charge build-up caused by electron shading in inductively-coupled plasmas at 2 to 40 mTorr in argon. Background on plasma charging damage to the gate-oxide of metal oxide semiconductor field effect transistors; Measurement of the electron and ion currents going into the silicon substrate through the dielectric structure; Effect of the electron temperature on the floating potential of the sample.

We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes. [ABSTRACT FROM AUTHOR]