1. Low leakage current—stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors.
- Author
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Lim, Mi-Hwa, Kang, KyongTae, Kim, Ho-Gi, Kim, Il-Doo, Choi, YongWoo, and Tuller, Harry L.
- Subjects
ELECTRIC leakage ,ZINC oxide thin films ,THIN film transistors ,NIOBIUM compounds ,BISMUTH compounds ,MAGNESIUM compounds ,INSULATED gate bipolar transistors ,LOW voltage systems - Abstract
The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility in ZnO thin film transistors (TFTs) utilizing compatible high-k Bi
1.5 Zn1.0 Nb1.5 O7 (BZN) gate insulators. All room temperature processed ZnO based TFTs with stacked MgO/BZN gate insulator exhibited a much enhanced field effect mobility of 5.4 cm2 /V s with excellent saturation characteristics as compared to that (μFE =1.13 cm2 /V s) of ZnO based TFTs with BZN gate insulator. This work demonstrates the suitability of MgO/BZN stacked gate insulators in the fabrication of low voltage ZnO based TFTs on plastic substrates. [ABSTRACT FROM AUTHOR]- Published
- 2006
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