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High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics. [ABSTRACT FROM AUTHOR]

Enhanced emission of high energy ions is measured from sub-wavelength metallic grating targets under irradiation by intense (1015-1016 W cm-2), p-polarized, 50 fs, 800 nm laser pulses. The maximum ion energy is 55% higher and the ion flux is 60% higher for the modulated surface in comparison with polished surfaces of the same atomic composition. The ion emission, a result of enhanced light coupling and hot electron production in the grating targets, is correlated with enhancement in hard x-ray bremsstrahlung emission. The results are well reproduced by particle-in-cell simulations. The study reveals that the enhanced laser coupling by surface plasmon excitation on metallic gratings is directly responsible for the enhancement of ion energies. [ABSTRACT FROM AUTHOR]