1. Spin-dependent Transverse Magnetic Focusing in InSb- and InAs-based Heterostructures.
- Author
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Heremans, J. J., Chen, Hong, Santos, M. B., Goel, N., Van Roy, W., and Borghs, G.
- Subjects
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HETEROSTRUCTURES , *TEMPERATURE , *BALLISTICS , *MESOSCOPIC phenomena (Physics) , *ELECTRONS , *SEMICONDUCTORS - Abstract
Spin-dependent ballistic transport was observed in InSb/AlInSb and InAs/AlGaSb heterostructures. Split transverse magnetic focusing maxima in InSb are consistent with spin-split trajectories of carriers as well as spin-flipping events occurring when carriers reflect off a lithographic barrier. Similar results are observed in InAs. The temperature dependence reveals that the ballistic focusing maxima survive up to ∼150 K for InSb and ∼60 K for InAs, whereas the splitting in the maxima disappears at lower temperatures, indicating the latter’s separate origin. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]
- Published
- 2007
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