1. Ballistic transport in induced one-dimensional hole systems.
- Author
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Klochan, O., Clarke, W. R., Danneau, R., Micolich, A. P., Ho, L. H., Hamilton, A. R., Muraki, K., and Hirayama, Y.
- Subjects
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BALLISTICS , *NANOWIRES , *HETEROSTRUCTURES , *ALUMINUM , *GALLIUM , *ARSENIC , *HOLES (Electron deficiencies) - Abstract
The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs>10. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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