1. Influence of Thermal Annealing on Phase Transformation in Bi10As40Se50 Thin Films.
- Author
-
MuktaBehera, Mishra, N. C., and Naik, R.
- Subjects
THIN films ,ANNEALING of metals ,BISMUTH selenide ,RAMAN spectroscopy ,PHASE transitions ,X-ray diffraction - Abstract
In the present work, we probe into the phase transition of amorphous Bi
10 As40 Se50 to a crystalline one upon thermal annealing. The Bi10 As40 Se50 thin films were prepared through thermal evaporation method and were annealed at 130° for 5h. The as-prepared and annealed films were characterized by XRD, FESEM and Raman spectroscopy. X-ray diffraction study revealed the amorphous nature of the as-prepared film and Bi3 Se4 crystallite phase formation in the annealed film. This clearly indicates annealing induced diffusion of Bi into As2 Se3 and hence the formation of Bi3 Se4 phase. FESEM images show the smooth and homogeneous surface for the Bi10 As40 Se50 film whereas the annealed film shows these crystallites covers the surface. The Raman spectra shows a broad band corresponds to AsSe3 unit and a raman peak of bismuth selenide in the asprepared film whichshows shifting in case of annealed film. [ABSTRACT FROM AUTHOR]- Published
- 2019
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