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The role of dopants on deformation and mechanical properties of 4H silicon carbide (4H-SiC) is proposed by using nanoindentation. It is found that the hardness, elastic modulus, and fracture toughness of 4H-SiC substrate wafers all decrease on the order of vanadium (V) doping, undoping, and nitrogen (N) doping. For all three types of 4H-SiC, basal plane dislocations (BPDs), threading edge dislocations, and cracks are formed during the nanoindentation. Polymorph transitions from 4H-SiC to amorphous SiC and 3C-SiC are found as the penetration depth of the indent increases from the subsurface to the deeper region. N doping is found to weaken the bond strength of 4H-SiC, which enhances the glide and piling up of BPDs in nanoindentated N-doped 4H-SiC. In contrast, V doping effectively hinders the glide of BPDs, which accumulates a high-stress field and facilitates the polymorph transition from 4H-SiC to 3C-SiC and amorphous SiC. The insight on the effects of dopants on the deformation and mechanical properties of 4H-SiC may help the design of the processing of differently doped 4H-SiC substrate wafers. [ABSTRACT FROM AUTHOR]

Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses ( t Cu ) have been systemically studied. The effective spin mixing conductance g eff ↑ ↓ , the interfacial spin transparency T, and the real spin–orbit torque efficiency ( J s J c ) real show a significant increase compared to the W/CoFeB heterostructure. ( J s J c ) real reaches its maximum of ∼0.54, increased up to ∼50% at the optimized t Cu ∼ 0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, θ SH int ∼ 0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices. [ABSTRACT FROM AUTHOR]

Gilbert damping is of crucial importance for spintronic devices due to its practical effect on the response time and energy consumption. Lower damping would enable more energy-efficient excitations and, thus, less current is needed. The Gilbert damping constant of the Co2FeAl film, a half-metal material important for spintronics with its 100% spin polarization at the Fermi level, has shown an abnormal increase at the thin film limit due to the inter-diffusion of Al atoms. Here, we report that the Gilbert damping of ultra-thin Co2 FeAl 1 + x films of nanometer thicknesses can be effectively tuned by delicately controlling the stoichiometric ratio during the growth. Gilbert damping has been found to be the lowest of 0.065 in Co2 FeAl 1 + 0.1 , which is deduced by ∼ 50 % compared to that in Co2FeAl. We have further found that the damping constant of the ultra-thin Co2 FeAl 1 + 0.1 film is restored to the value of 0.062 of the nominal stoichiometric Co2FeAl by compensating the Al composition deficiency, as supported by 10.37% of composition change from scanning transmission electron microscopy with energy-dispersive-spectroscopy. This work offers a unique path to manipulate the Gilbert damping constant in ultra-thin Co2FeAl films by Al concentration control. [ABSTRACT FROM AUTHOR]

We report on an ultrahigh Hall mobility exceeding 40 000 cm2/V s and a very long traditional scattering time in a trivial layered semiconductor Bi2O2Se. Shubnikov-de Haas (SdH) oscillations were observed in both the unsaturated longitudinal linear magnetoresistance Rxx and the transverse Hall resistance Rxy. The amplitude ΔRxy of SdH oscillations was phase-shifted approximately 180° with respect to ΔRxx, indicating the strong suppression of electron backward scattering. This was further proved by the evidence of transport lifetime that is 10 times longer than the quantum lifetime. Our results show that the suppressed backward scattering in nontrivial Dirac semimetals can also occur in the trivial semiconductor Bi2O2Se. [ABSTRACT FROM AUTHOR]