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The preparation of the ZnO nanotubes (ZNTs) from the evolution of the ZnO nanorods via a simple chemical etching process is discussed. Surface band bending is shown to lead to the coexistence of direct, as well as indirect transitions in these nanotubes.

Highly crystalline zinc nitride ([Zn.sub.3][N.sub.2]) thin films are grown by rf magnetron sputtering on quartz substrates and the substrate temperature during growth has affected the crystal quality of the thin films. Temperature-dependent Hall effect measurements of [Zn.sub.3][N.sub.2] films have displayed distinct conduction mechanisms at specific different temperature ranges.

Vertically well-aligned ZnO nanorods on Si substrates are prepared by a two-step chemical bath deposition method and their structural and optical properties are examined by Raman and photoluminescence spectroscopy. The resonant Raman measurements have shown that the surface defects have played a major role in the as-grown sample and that the strong intensity increase in Raman scatterings is due to both outgoing resonant Raman scattering effect and deep level defect scattering contribution for ZnO nanorods.

The quantitative nanoindentation technique is used to perform nanomechanical tests of bending flexibility, kinking, and buckling failure characterization of vertically aligned single crystal ZnO nanorods/nanowires. The results showed that the elasticity of the ZnO single crystal is approximately linear up to the first inflection point and is independent of the growth method and strongly dependent on the verticality on the surface of the substrates.

Vertically well-aligned ZnO nanorods on Si substrates are prepared by a two-step chemical bath deposition (CBD) method and their optical properties are examined by time resolved photoluminescence spectroscopy. The results have shown that the fast exponential decay is related to the surface recombination and the slow decay is related to the bulk decay.