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A theoretical approach was proposed to investigate the correlation between morphology and breakdown strength. Monte Carlo simulation also confirmed that the breakdown strength changes with the void shape and size distributions and can be improved by orientation.

A density matrix approach is used in combination with a tight-binding model to elucidate electron transport in terahertz quantum cascade lasers and is incorporated into a Monte Carlo simulation. The results show that the inclusion of coherent transport and dephasing in the calculations is essential when transport is dominated by transitions between weakly coupled states.

The implantation-induced disordering of CuPtbeta-ordered quantum GainP and its microstructure are considered. Implantation defects mediate implantation-induced disordering and can be identified using defect annealing modelling techniques. The disordering process is associated with an activation energy of 2.15 eV. Masked implantation of lateral order/disorder structures were established after high resolution electron beam lithography techniques were used to make wire and dot implantation masks of 35 nanometers wide.