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Your search keyword '"Shamiryan, D."' showing total 4 results
Start Over Author "Shamiryan, D." Publisher american institute of physics, inc.
4 results on '"Shamiryan, D."'

1. Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

Author

Urbanowicz, A.M., Vanstreels, K., Verdonck, P., Shamiryan, D., De Gendt, S., and Baklanov, M.R.

Subjects
Chemical vapor deposition -- Usage, Elasticity -- Measurement, Silicon compounds -- Structure, Silicon compounds -- Electric properties, Silicon compounds -- Mechanical properties, Metals -- Hardenability, Metals -- Usage, Physics
Abstract

SiOCH glasses with improved mechanical properties and ultralow dielectric constant are obtained by controlled decomposition of the porogen molecules used to create nanoscale pores, prior to the UV-hardening step. The increased Young's modulus (YM) is related to an enhanced molecular-bridging mechanism when film is hardened without porogen that is described based on percolation of rigidity theory and random network concepts.

Published
2010

2. Growth and characterization of atomic layer deposited WC(sub 0.7)N(sub 0.3) on polymer films

Author

Hoyas, A. Martin, Schuhmacher, J., Shamiryan, D., Waeterloos, J., Besling, W., Maex, K., and Celis, J. P.

Subjects
Polymers -- Research, Polymers -- Electric properties, Dielectric films -- Research, Thin films -- Research, Nitrides -- Research, Nitrides -- Electric properties, Physics
Abstract

Atomic layer deposition (ALD) of tungsten carbide nitride (WC0.7N0.3) on low-k (dielectric constant) dielectric aromatic polymer material was investigated. Findings show that the ALD island formation on the treated polymer is not merely a function of the number of available adsorption sites but depends also on the structure and composition of the substrate surface.

Published
2004

3. Low dielectric constant materials for microelectronics

Author

Maex, K., Baklanov, M.R., Shamiryan, D., Lacopi, F., Brongersma, S.H., and Yanovitskaya, Z.S.

Subjects
Silica, Vitreous -- Properties, Miniature electronic equipment -- Structure, Miniature electronic equipment -- Mechanical properties, Dielectrics -- Structure, Dielectrics -- Mechanical properties, Microelectronics -- Structure, Microelectronics -- Mechanical properties, Physics
Abstract

An overview of the classification, the characteristics and properties of low-k dielectric is given. Some of the needs for improved metrology for determining pore size, size distributions, structure, and mechanical properties are addressed.

Published
2003

4. Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films

Author

Iacopi, F. ; Zs. Tokel, Q.T. Le ; Shamiryan, D., Kreissig, U. ; Van Hove, M., and Conard, T. ; Brijs, B.

Subjects
Porous materials -- Properties, Thin films -- Properties, Dielectric films -- Properties, Physics
Abstract

A study was conducted to investigate the thin film deposition of Ta(N) by physical vapor deposition on porous films with different average pore sizes and material compositions. The result reveals that the minimal Ta(N) thickness required to obtain a continuous metal layer on the top of the porous film depends on the porosity and pore size and on the chemical interaction of the thin film with the porous substrate.

Published
2002

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