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Your search keyword '"Foad, Majeed"' showing total 2 results
Start Over Author "Foad, Majeed" Publisher american institute of physics, inc.
2 results on '"Foad, Majeed"'

1. Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

Author

Smith, Roger, Shaw, Marcus, Webb, Roger P., and Foad, Majeed A.

Subjects
Molecular dynamics -- Models, Semiconductors -- Junctions, Physics
Abstract

Molecular dynamics simulations were conducted to determine the feasibility of employing decaborane B10H14 in the development of shallow junctions in Si. Results show that a small amount of H is also implanted in the crystal along with B atoms. Results also indicate that individual molecular collisions cause local swelling as well as small craters, creating a problem for ultrashallow junctions.

Published
1998

2. Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

Author

Giubertoni, Damiano, Pepponi, Giancarlo, Gennaro, Salvatore, Barsani, Massimo, Sahiner, Mehmet Alper, Kelty, Stephen P., Doherty, Roisin, Foad, Majeed A., Kah, Max, Kirkby, Karen J., Woicik, Joseph C., and Pianetta, Piero

Subjects
Annealing -- Usage, Arsenic -- Thermal properties, Arsenic -- Atomic properties, Silicon -- Electric properties, Silicon -- Thermal properties, Physics
Abstract

A study is conducted to examine the behavior of distributions of arsenic in ultrashallow regime fabricated in silicon by either rapid thermal annealing or laser submelt annealing. The results obtained provide insight into the monoclinic SiAs aggregates as well as various arsenic-vacancy clusters that play a critical role in the deactivation of arsenic.

Published
2008

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