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X-ray photoelectron spectroscopy (XPS) is employed to study the polyamide samples, which are modified by aluminum (Al) ions by filtered cathodic vacuum arc (FCVA), using with plasma immersion ion implantation (PIII) technique. The study reveals the chemical bond between implanted and deposited Al ions and the polyimide matrix, which is found to be extremely useful for the entire process.

The low energy backscattering co-efficient for the special case of film of carbon deposited on aluminum is investigated. The findings show for aluminum substrates, the position of the relative minima of the backscattering coefficient is increasing as the carbon film thickness increases.

A method is presented to achieve thick high quality crack-free AlGaN layers on GaN. This method uses jointly plastic relaxation and lateral growth. In order to explain the mechanism involved in the full relaxation of the AlGaN/GaN heterostructure, a relaxation scheme is proposed and discussed.

A new method is described for the formation of metal nanoparticles by sputter deposition inside the reaction ion etching chamber with a very short target-substrate distance. The distribution and morphology of nanoparticles are affected by the distance, the ion concentration and the sputtering time and a new mechanism is proposed based on the seeding effect of the substrate for interpreting the experimental results.

The three-dimensional classical molecular dynamics simulation was used to examine the deposition and annealing behaviors of Al atoms on rough Cu (111) surface on the atomic scale. The significant intermixing between Al and Cu which rapidly occurs due to annealing at 700 K with decrease in the surface roughness provide insight into the exchange process of Al with substrate Cu during the initial stage of high temperature annealing.

The analysis has shown the efficient energy transfer from Si nanoparticles (NPs) to [Er.sup.3+] ions in a nonsilica-based material [Al.sub.2][O.sub.3]. The results have shown that a higher percentage of [Er.sup.3+] ions are sensitized by Si NPs and have stressed the importance of controlling the dopant distribution at the nanoscale to achieve improved device performance.

X-ray photoemission spectroscopy (XPS) was used to understand the mechanism and the interfacial interaction between the active organic layer and the cathode for polymer solar cells with cesium carbonate as an electron-injection interlayer. [Cs.sub.2]C[O.sub.3]/Al was found to form a better Ohmic contact with the organic layer and reduce the device series resistance.

Ti and Al K-edge x-ray absorption spectroscopy is used for examining the electronic structure of [Ti.sub.1-x][Al.sub.x]N thin films deposited by reactive magnetron sputtering. The x-ray absorption fine structure (EXAFS) has allowed structural information about both crystallized domains and grain boundaries, while x-ray diffraction has given the lattice symmetry and the sizes of the former.

Photoluminescence spectroscopy is used to study the luminescence mechanism of [Al.sub.x][Ga.sub.1-x]As/GaAs single quantum wells at low temperatures with differing aluminum concentrations in the barrier. The results verify that the observed standard deviation of the potential fluctuations increases with aluminum concentration in the barrier, in accordance to the AlGaAs alloy compositional disorder theory.

The shearing of aluminum asperities by a 'hard' asperity is simulated by molecular dynamics. The relative importance of each factor and its interaction is analyzed by the design-of-experiment approach.

Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defects areas, is proposed as the origin of island growth.