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The half-metallic manganite oxide La

Integrating characteristics of materials through constructing artificial superlattices (SLs) has raised extensive attention in multifunctional materials. Here, we report the synthesis of BiFeO3/BiMnO3 SLs with considerable ferroelectric polarizations and tunable magnetic moments. The polarization of BiFeO3/BiMnO3 SLs presents a decent value of 12 μC/cm2, even as the dimensionality of BiFeO3 layers per period is reduced to about five-unit cells when keeping the BiMnO3 layers same. Moreover, it is found that the tunable magnetic moments of SLs are linked intimately to the dimensionality of BiFeO3 layers. Our simulations demonstrate that the superexchange interaction of Fe-O-Mn tends to be antiferromagnetic (AFM) with a lower magnetic domain formation energy rather than ferromagnetic (FM). Therefore, as the dimensionality of BiFeO3 per period is reduced, the AFM superexchange interaction between BiFeO3 and BiMnO3 in the SLs becomes weak, promoting a robust magnetization. This interlayer modulation effect in SLs presents an alluring way to accurately control the multiple order parameters in a multiferroic oxide system.

Oxygen nonstoichiometry plays a critical role in determining the physical and chemical functionalities of oxide materials. For widespread applications involving oxygen transport and exchange with t...

The strain effect on charge transfer in correlated oxide La0.8Sr0.2MnO3/NdNiO3 (LSMO/NNO) heterostructures is investigated. This is achieved by carefully tailoring the strain on the two layers using various substrates. In contrast to bare LSMO films, the strain dependence of the enhanced magnetic moment of the LSMO/NNO bilayers strongly suggests that the charge transfer can be controlled via strain engineering in complex oxide heterostructures. Furthermore, our study also reveals that the coercive field, exchange bias, and conductivity are dramatically affected by the strain-modulated charge transfer in LSMO/NNO heterostructures. Our work thus points out a new path to control electronic states in oxide heterostructures to advance the use of interfaces in oxide-based electronics.