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Nanotechnology is at the forefront of scientific research and offers great prospects for the development of technology. As a type of III-V semiconductor, GaSb materials exhibit numerous outstanding optical and electrical characteristics that are very promising for nonlinear optical device applications. In this study, the electronic band structures of GaSb are theoretically calculated, and its application in dissipative soliton fiber lasers is validated. A GaSb thin film is deposited on a microfiber using magnetron sputtering deposition, and the morphology, chemical composition, structure, and nonlinear optical characteristics of the proposed microfiber-GaSb device are investigated. After incorporating it into an Er-doped fiber laser, dissipative soliton laser pulses are readily obtained with a fundamental frequency of 43.5 MHz. With increasing pump power, the fiber laser could work in the fundamental frequency mode-locking state. At a pump power of 570 mW, the pulse width and the output power are measured to be 917 fs and 49.75 mW, separately. These results reveal that GaSb can be used as an efficient saturable absorber, which will have potential applications in ultrafast optics.

Two-dimensional (2D) transition metal chalcogenides (TMCs) become more attractive upon addition of a third element owing to their unique structure and remarkable physical and chemical properties, which endow these materials with considerable potential for applications in nanoscale devices. In this work, a RexNb(1-x)S2-based saturable absorber (SA) device for ultrafast photonics applications is studied. The device is assembled by placing RexNb(1-x)S2 nanosheets with a thickness of 1-3 nm onto a microfiber to increase their compatibility with an all-fiber laser cavity. The prepared RexNb(1-x)S2-based device exhibits a modulation depth of 24.3%, a saturation intensity of 10.1 MW/cm2, and a nonsaturable loss of 28.5%. Furthermore, the RexNb(1-x)S2-based device is used to generate ultrashort pulses in an erbium-doped fiber (EDF) laser cavity. At a pump power of 260 mW, the EDF laser operates in a conventional soliton mode-locked region. The pulse width is 285 fs, and the repetition frequency is 61.993 MHz. In particular, the bound-state soliton mode-locking operation is successfully obtained in a pump power range of 300-900 mW. The bound-state pulses are formed by doubling identical solitons with a temporal interval of 0.8 ps. The output power is as high as 47.9 mW, and the repetition frequency is 123.61 MHz. These results indicate that the proposed RexNb(1-x)S2-based SAs have comparable properties to currently used 2D SAs and provide a basis for their application in the field of ultrafast photonics.