Search

The reaction of MnTe with AgSbTe2 in an equimolar ratio (ATMS) provides a new semiconductor, AgMnSbTe3. AgMnSbTe3 crystallizes in an average rock-salt NaCl structure with Ag, Mn, and Sb cations statistically occupying the Na sites. AgMnSbTe3 is a p-type semiconductor with a narrow optical band gap of ∼0.36 eV. A pair distribution function analysis indicates that local distortions are associated with the location of the Ag atoms in the lattice. Density functional theory calculations suggest a specific electronic band structure with multi-peak valence band maxima prone to energy convergence. In addition, Ag2Te nanograins precipitate at grain boundaries of AgMnSbTe3. The energy offset of the valence band edge between AgMnSbTe3 and Ag2Te is ∼0.05 eV, which implies that Ag2Te precipitates exhibit a negligible effect on the hole transmission. As a result, ATMS exhibits a high power factor of ∼12.2 μW cm-1 K-2 at 823 K, ultralow lattice thermal conductivity of ∼0.34 W m-1 K-1 (823 K), high peak ZT of ∼1.46 at 823 K, and high average ZT of ∼0.87 in the temperature range of 400-823 K.

The lead-free double perovskite has been proven to be one of the promising alternatives to solve the stability and toxicity problems of lead-based organic-inorganic hybrid perovskite solar cells. Here, high-quality Cs2AgBiBr6 double perovskite films with large grains and smooth surface have been prepared through a sequential-vapor-deposition method, and a low-cost and eco-friendly Cu2O film with a suitable energy level and good electrical properties was prepared as an efficient hole transport layer by vacuum vapor deposition for the first time. The Cu2O-based devices achieve a champion power conversion efficiency increasing from 1.03 to 1.52% and an enhancement of photovoltage from 1.083 to 1.198 V compared with their organic counterparts. More importantly, the Cu2O-based devices have excellent stability; they maintained the initial 96% efficiency under environmental conditions after 33 days of unpackaged storage. These results also point out the direction for the further development of these new promising perovskite solar cells.

Inorganic perovskite CsPbBr3 has broad application prospects in photovoltaic windows, tandem cells, and other fields due to its intrinsic semitransparency, excellent photoelectric properties, and stability. In this work, a high-quality semitransparent CsPbBr3 film was prepared by a sequential vacuum evaporation deposition method without high-temperature annealing and successfully used as the active layer of flexible perovskite solar cells (F-PSCs) for the first time, achieving a power conversion efficiency (PCE) of 5.00%. By introducing an energy-level buffer layer of Cu2O between CsPbBr3 and Spiro-OMeTAD, the champion PCE has been further improved to 5.67% owing to the reduction of electron-hole recombination and enhanced charge extraction. The optimized devices present higher stability, which can maintain more than 95% of the initial efficiency even after continuous heating at 85 °C for 240 h. Moreover, the F-PSCs also exhibit excellent mechanical durability, and 90% of the original PCE can be retained after 1000 bending cycles at a curvature radius of 3 mm.

Bi2(TeSe)3 is a dominant n-type thermoelectric material used in commercial applications. However, its toxicity and rarity hamper further large-scale industrial applications. Herein, we develop a Ag8SiSe6-based composite as a promising n-type semiconductor with the advantages of nontoxicity and elemental abundance. Ag8SiSe6 composites with Ag2Se and Si nanoprecipitation are fabricated by a unique precipitation reaction sensitive to the hot pressing process. The energy-filtering effect between these phases optimizes electrical resistivity (∼14.59 μΩ·m) and the Seebeck coefficient (above -150 μV·K-1) of the composites, resulting in a maximum power factor of ∼1772 μW·m-1·K-2(@125 °C), which is the highest value in an argyrodite system near room temperature. Nanoprecipitation of Ag2Se and Si can also scatter more phonons and further reduce the lattice thermal conductivity to 0.20 W·m-1·K-1. As a result, a maximum ZT value of ∼0.9 (@125 °C) and an average ZT value of ∼0.7 (25-200 °C) are obtained in the composite with 12 vol % Ag2Se and 0.23 vol % Si, which is sintered at 525 °C. These thermoelectric properties are comparable to those of a commercial n-type Bi2Te3 compound. In addition, the Ag8SiSe6 composite has robust mechanical properties (Vickers hardness of >110 HV and bending strength of 70.6 MPa), much better than those of other thermoelectric compounds, because of which Ag8SiSe6 has great commercial application as an alternative to Bi2Te3-based compounds.

SnTe has attracted considerable attention as an environmentally friendly thermoelectric material. The thermoelectric figure of merit ZT value is related to low thermal conductivity that can be successfully realized using fabrication of nanostructures. However, the practical realization of SnTe nanostructured composites is often limited by long reaction time, low yield, and aggregation of nanoparticles. Herein, a simple substitution reaction between Cu

In this work, a dual-site electronic doping with Sb and I in SnTe has been carried out, and the impact of codoping on the electrical and thermal transport properties has been studied in detail. Due...

Nowadays, inorganic CsPbBr3 perovskite is emerging as a promising candidate as a light-absorbing layer in photovoltaic devices due to its excellent photoelectric property and superior stability under humidity and thermal attacks in comparison with organic cation-based hybrid perovskites. However, the impure perovskite phase and severe interfacial charge recombination have limited the further improvement of device performance. In this work, a vapor-assisted solution technique was introduced to prepare a high-purity CsPbBr3 film in a perovskite solar cell (PSC). To further reduce the electron-hole recombination and enhance charge extraction, we introduced the novel intermediate energy level of manganese sulfide (MnS) as a hole transport layer in CsPbBr3 PSC. The as-optimized CsPbBr3 PSC based on all-inorganic transport layers delivers a power conversion efficiency (PCE) of 10.45% in comparison with 8.16% for the device free of an intermediate layer, which is one of the highest PCEs achieved among the CsPbBr3-based PSCs to date. Moreover, the optimized device retained 80% PCE of its initial efficiency over 90 days under 80% relative humidity at 85 °C, indicating an excellent environmental tolerance to boost the commercial application of low-cost, efficient, and stable all-inorganic PSCs.

In this work, earth abundant CaI2 compound has been applied to regulate the thermoelectric performance of SnTe by codoping in both the anion and cation sites for the first time. The carrier concentration has been effectively tuned to a reasonable range due to the electron donor nature of ITe+ point defects; on the other hand, the Seebeck coefficient has been significantly enhanced because of the resulted valence band convergence and band gap enlargement. More importantly, the phonon and carrier scattering have been tailored tactically, and a relatively high power factor with a significantly lowered thermal conductivity have been achieved simultaneously. In consequence, an enhanced figure of merit ZT ∼1.2 at 873 K was attained in the SnTe-3% CaI2 sample.

α-MgAgSb (α-MAS) has recently been discovered to be a promising p-type thermoelectric material owing to its earth-abundant and nontoxic nature. However, there are two main disadvantages hindered th...

In this work, high mobility n-type SnS2 semiconductor films have been fabricated by vacuum deposition at room temperature and employed as the electron transport layer of flexible perovskite solar cells for the first time. The deposited SnS2 film exhibits homogeneous microstructure and good energy-level matching and presents a fast charge mobility and collection rate. By introducing SnS2 layer as an electron transport layer in fabricating flexible PKSC devices, a high cell performance with negligible hysteresis and an improved stability have been achieved. Because ZnO can be damaged by MAPbI3, the introduction of SnS2 buffer layer seems to be useful for improving the stability. By optimizing the SnS2 film thickness, a maximum power conversion efficiency of 13.2% with negligible hysteresis effect has been achieved in the device with a 60 nm SnS2 electron transport layer due to the optimal coverage, electron extraction, and large charge recombination resistance. This work demonstrates an encouraging prospect...

For a typical perovskite solar cell (PKSC), both the electron transport layers (ETLs) and hole transport materials (HTMs) play a very important role in improving the device performance and long-term stability. In this paper, we firstly improve the electron transport properties by modification of TiO2 ETLs with Na species, and an enhanced power conversion efficiency (PCE) of 16.91% has been obtained with less hysteresis. Subsequently, an inorganic CuI film prepared by a facile spray deposition method has been employed to replace the conventional spiro-OMeTAD as the HTM in PKSCs. Because of the improved transport properties at the ETL/perovskite and perovskite/HTM interfaces, a maximum photovoltaic efficiency of 17.6% with reduced hysteresis has been achieved in the PKSC with both the Na-modified TiO2 ETL and 60 nm-thick CuI layer HTM. To our knowledge, the PCE achieved in this paper is one of the highest values ever reported for the PKSC devices with inorganic HTMs. More significantly, the PKSCs exhibit an...

The effect of Al-, Ga-, and In-doping on the thermoelectric (TE) properties of Cu3SbSe4 has been comparatively studied on the basis of theoretical prediction and experimental validation. It is found that tiny Al/Ga/In substitution leads to a great enhancement of electrical conductivity with high carrier concentration and also large Seebeck coefficient due to the preserved high band degeneracy and thereby a remarkably high power factor. Ultimately, coupled with the depressed lattice thermal conductivity, all three elements (Al/Ga/In) substituted samples have obtained a highly improved thermoelectric performance with respect to undoped Cu3SbSe4. Compared to the samples at the same Al/In doping level, the slightly Ga-doped sample presents better TE performance over the wide temperature range, and the Cu3Sb0.995Ga0.005Se4 sample presents a record high ZT value of 0.9 among single-doped Cu3SbSe4 at 623 K, which is about 80% higher than that of pristine Cu3SbSe4. This work offers an alternative approach to boost the TE properties of Cu3SbSe4 by selecting efficient dopant to weaken the coupling between electrical conductivity and Seebeck coefficient.

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.