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Single-crystalline semiconductor nanomembranes (NMs) bonded to compliant substrates are increasingly used for biomedical research and in health care. Nevertheless, there is a limited understanding of how individual cells sense the unique mechanical properties of these substrates and adjust their behavior in response to them. In this work, we performed proliferation assays, cytoskeleton analysis, and focal adhesion (FA) studies for NIH-3T3 fibroblasts on 220 and 20 nm single-crystalline Si on polydimethylsiloxane (PDMS) substrates with an elastic modulus of ∼31 kPa. We also characterized cell response on bulk Si as a reference. Our in vitro studies show that varying the thickness of the NM between 20 and 220 nm affects the proliferation rate of the cells, their cytoskeleton, fiber organization, spread area, and degree of FA. For example, cultured cells on 220 nm Si/PMDS exhibit the same response as on bulk Si, that is, they are well-spread with a pentagonal (or dendritic) shape and show a good organization of stress fibers and FAs. On the other hand, the cells on 20 nm Si/PDMS are spherical, with fiber organization and FAs in undetectable levels. We explained the results of our in vitro studies through a shear-lag mechanical model. The calculated FA-substrate contact stiffnesses for fibroblasts on bulk Si and 220 nm Si/PDMS closely match, and they are significantly higher than the stiffness of the integrin clutches and the plaque. Conversely, focal contacts with 20 nm Si/PDMS have comparable lateral compliance to adhesion-mediating intracellular organisms. In conclusion, our work relies on recent advances in NM technology to fill a critical knowledge gap about how individual cells sense and react to the mechanical properties of NM-based substrates. Our findings will have a major impact on the design of flexible electronic materials for applications in biomedical science and health care.

The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy. Graphene properly grown by chemical vapor deposition on Ge(100), (111), or (110) effectively inhibits room-temperature oxidation of the surface. When graphene is transferred to the Ge surface, oxidation is reduced relative to that on uncovered Ge but has the same power law dependence. We conclude that access to the graphene/Ge interface must occur via defects in the graphene. The excellent passivation provided by graphene grown on Ge should enhance applications of Ge in the electronic-device industry.

Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO2. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO2. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO2. The results from the electrical and structural characterization suggest that a charge transfer in the order of 1012 cm–2 occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic pr...

Neurons are often cultured in vitro on a flat, open, and rigid substrate, a platform that does not reflect well the native microenvironment of the brain. To address this concern, we have developed a culturing platform containing arrays of microchannels, formed in a crystalline-silicon nanomembrane (NM) resting on polydimethylsiloxane; this platform will additionally enable active sensing and stimulation at the local scale, via devices fabricated in the silicon. The mechanical properties of the composite Si/compliant substrate nanomaterial approximate those of neural tissue. The microchannels, created in the NM by strain engineering, demonstrate strong guidance of neurite outgrowth. Using plasma techniques, we developed a means to coat just the inside surface of these channels with an adhesion promoter (poly-d-lysine). For NM channels with openings larger than the cross-sectional area of a single axon, strong physical confinement and guidance of axons through the channels are observed. Imaging of axons that grow in channels with openings that approximate the size of an axon suggests that a tight seal exists between the cell membrane and the inner surface of the channel, mimicking a myelin sheath. Such a tight seal of the cell membrane with the channel surface would make this platform an attractive candidate for future neuronal repair. Results of measurements of impedance and photoluminescence of bare NM channels are comparable to those on a flat NM, demonstrating electrical and optical modalities of our platform and suggesting that this scaffold can be expanded for active sensing and monitoring of neuron cellular processes in conditions in which they exist naturally.

The controlled application of strain in crystalline semiconductors can be used to modify their basic physical properties to enhance performance in electronic and photonic device applications. In germanium, tensile strain can even be used to change the nature of the fundamental energy band gap from indirect to direct, thereby dramatically increasing the interband radiative efficiency and allowing population inversion and optical gain. For biaxial tension, the required strain levels (around 2%) are physically accessible but necessitate the use of very thin crystals. A particularly promising materials platform in this respect is provided by Ge nanomembranes, that is, single-crystal sheets with nanoscale thicknesses that are either completely released from or partially suspended over their native substrates. Using this approach, Ge tensilely strained beyond the expected threshold for direct-band gap behavior has recently been demonstrated, together with strong strain-enhanced photoluminescence and evidence of population inversion. We review the basic properties, state of the art, and prospects of tensilely strained Ge for infrared photonic applications.