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Polyvinylidene fluoride (PVDF) film with high energy storage density has exhibited great potential for applications in modern electronics, particle accelerators, and pulsed lasers. Typically, dielectric/ferroelectric properties of PVDF film have been tailored for energy storage through stretching, annealing, and defect modification. Here, PVDF films were prepared by the solution casting method followed by an ultraviolet (UV) irradiation process, with special emphasis on how such treatment influences their dielectric and energy storage properties. Upon UV irradiation, the dielectric constant and breakdown strength of the PVDF film were enhanced simultaneously. A high energy density of 18.6 J/cm

We report a chemical route to synthesize centimeter-scale stoichiometric "graphenol (C6OH1)", a 2D crystalline alcohol, via vapor phase hydroxylation of epitaxial graphene on Cu(111). Atomic resolution scanning tunneling microscopy revealed this highly-ordered configuration of graphenol and low energy electron diffraction studies on a large-area single crystal graphene film demonstrated the feasibility of the same superstructure being achieved at the centimeter length scale. Periodic density functional theory (DFT) calculations about the formation of C6(OH)1 and its electronic structure are also reported.

The process of oxidation of a copper surface coated by a layer of graphene in water-saturated air at 50 °C was studied where it was observed that oxidation started at the graphene edge and was complete after 24 h. Isotope labeling of the oxygen gas and water showed that the oxygen in the formed copper oxides originated from water and not from the oxygen in air for both Cu and graphene-coated Cu, and this has interesting potential implications for graphene as a protective coating for Cu in dry air conditions. We propose a reaction pathway where surface hydroxyl groups formed at graphene edges and defects induce the oxidation of Cu. DFT simulation shows that the binding energy between graphene and the oxidized Cu substrate is smaller than that for the bare Cu substrate, which facilitates delamination of the graphene. Using this process, dry transfer is demonstrated using poly(bisphenol A carbonate) (PC) as the support layer. The high quality of the transferred graphene is demonstrated from Raman maps, XPS, ...

We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.

We investigated high-temperature dielectric responses of high-κ perovskite nanosheet (Ca2Nb3O10), an important material platform for postgraphene technology and ultrascale electronic devices. Through in situ characterizations using conducting atomic force microscopy, we found a robust high-temperature property of Ca2Nb3O10 nanosheet even in a monolayer form (∼2 nm). Furthermore, layer-by-layer assembled nanocapacitors retained both size-free high-εr characteristic (∼200) and high insulation resistance (∼1×10(-7) A/cm2) at high temperatures up to 250 °C. The simultaneous improvement of εr and thermal stability in high-κ nanodielectrics is of critical technological importance, and perovskite nanosheet has great potential for a rational design and construction of high-temperature capacitors.

Combining different materials into desired superlattice structures can produce new electronic states at the interface and the opportunity to create artificial materials with novel properties. Here we introduce a new, rather unexpected, and yet simple way to such a superlattice assembly of perovskite oxides: in the Dion-Jacobson phase, a model system of layered perovskites, high-quality bicolor perovskite superlattices (LaNb(2)O(7))(nL)(Ca(2)Nb(3)O(10))(nC) are successfully fabricated by a layer-by-layer assembly using two different perovskite nanosheets (LaNb(2)O(7) and Ca(2)Nb(3)O(10)) as a building block. The artificially fabricated (LaNb(2)O(7)/Ca(2)Nb(3)O(10)) superlattices are structurally unique, which is not feasible to create in the bulk form. By such an artificial structuring, we found that (LaNb(2)O(7)/Ca(2)Nb(3)O(10)) superlattices possess a new form of interface coupling, which gives rise to ferroelectricity.

RbBiNb2O7 ceramic is synthesized by solid state reaction of stoichiometric quantities of Rb2CO3, Bi2O3, and Nb2O5 (1000 °C, 24 h) and characterized by powder XRD, Raman scattering spectroscopy, and electrical measurements.