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We systematically analyze triple-cation perovskite solar cells for indoor applications. A large number of devices with different bandgaps from 1.6 to 1.77 eV were fabricated, and their performance under 1-sun AM1.5 and indoor white light emitting diode (LED) light was compared. We find that the trends agree well with the detailed balance limit; however, the devices near the optimal bandgap (1.77 eV) perform worse due to the lower perovskite quality. Instead, we achieve the highest power conversion efficiency (PCE) of 34.0% under 870 lx with 1.67 eV and Al 2 O 3 passivation. The perovskite with a bandgap of 1.71 eV is not far behind, with a high V OC of 1.02 V. Measurements under different white LED color temperatures confirm that the highest PCE is achieved under the warmest colors. All measurements were carried out in a dedicated indoor setup that ensures the diffuse light typical of indoor environments and allows both short- and long-term measurements. In the best case, we observe no degradation during the 33-day test under simulated office conditions with regular switching on and off of the light and a T 80 of 30 days under continuous illumination. The results were obtained from multiple batches, which corroborates our findings and gives them statistical relevance.

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1-xSbx nanowires by molecular-beam epitaxy. GaAs1-xSbx nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1-xSbx nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAs1-xSbx nanowires with x ranging from 0.60 to 0.93, we grow the GaAs1-xSbx nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAs1-xSbx nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAs0.07Sb0.93). High-resolution transmission electron microscopy images show that the grown GaAs1-xSbx nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAs1-xSbx nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAs1-xSbx nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAs1-xSbx nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries. [ABSTRACT FROM AUTHOR]

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V1-yVy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux. [ABSTRACT FROM AUTHOR]

Semiconducting molybdenum ditelluride (2H-MoTe 2 ), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe 2 -based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe 2 , through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe 2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p - dominated ambipolar to n - type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p - and n - channels are established on a single MoTe 2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p - and n - transport in Al-modified MoTe 2 . Our studies coupled with the tunable nature of in situ modification enable MoTe 2 to be a promising candidate for high-performance complementary electronics.

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

Perovskites based on organometal lead halides have attracted great deal of scientific attention recently in the context of solar cells and optoelectronic devices due to their unique and tunable electronic and optical properties. Herein, we show that the use of electrospray technique in conjunction with the antisolvent-solvent extraction leads to novel low-dimensional quantum structures (especially 2-D nanosheets) of CH3NH3PbI3- and CH3NH3PbBr3-based layered perovskites with unusual luminescence properties. We also show that the optical bandgaps and emission characteristics of these colloidal nanomaterials can be tuned over a broad range of visible spectral region by compositional tailoring of mixed-halide (I- and Br-based) perovskites.

Solution-processed organo-lead halide perovskites are produced with sharp, color-pure electroluminescence that can be tuned from blue to green region of visible spectrum (425-570 nm). This was accomplished by controlling the halide composition of CH3NH3Pb(BrxCl1-x)3 [0 ≤ x ≤ 1] perovskites. The bandgap and lattice parameters change monotonically with composition. The films possess remarkably sharp band edges and a clean bandgap, with a single optically active phase. These chloride-bromide perovskites can potentially be used in optoelectronic devices like solar cells and light emitting diodes (LEDs). Here we demonstrate high color-purity, tunable LEDs with narrow emission full width at half maxima (FWHM) and low turn on voltages using thin-films of these perovskite materials, including a blue CH3NH3PbCl3 perovskite LED with a narrow emission FWHM of 5 nm.

A close-proximity atmospheric pressure chemical vapor deposition (AP-CVD) reactor is developed for synthesizing high quality multicomponent metal oxides for electronics. This combines the advantages of a mechanically controllable substrate-manifold spacing and vertical gas flows. As a result, our AP-CVD reactor can rapidly grow uniform crystalline films on a variety of substrate types at low temperatures without requiring plasma enhancements or low pressures. To demonstrate this, we take the zinc magnesium oxide (Zn(1-x)Mg(x)O) system as an example. By introducing the precursor gases vertically and uniformly to the substrate across the gas manifold, we show that films can be produced with only 3% variation in thickness over a 375 mm(2) deposition area. These thicknesses are significantly more uniform than for films from previous AP-CVD reactors. Our films are also compact, pinhole-free, and have a thickness that is linearly controllable by the number of oscillations of the substrate beneath the gas manifold. Using photoluminescence and X-ray diffraction measurements, we show that for Mg contents below 46 at. %, single phase Zn(1-x)Mg(x)O was produced. To further optimize the growth conditions, we developed a model relating the composition of a ternary oxide with the bubbling rates through the metal precursors. We fitted this model to the X-ray photoelectron spectroscopy measured compositions with an error of Δx = 0.0005. This model showed that the incorporation of Mg into ZnO can be maximized by using the maximum bubbling rate through the Mg precursor for each bubbling rate ratio. When applied to poly(3-hexylthiophene-2,5-diyl) hybrid solar cells, our films yielded an open-circuit voltage increase of over 100% by controlling the Mg content. Such films were deposited in short times (under 2 min over 4 cm(2)).