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The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm -1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.

Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS 3 , one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS 3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe 2 /FePS 3 type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity ( R max ) of 52 mA W -1 and an external quantum efficiency (EQE max ) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe 2 /FePS 3 is attributed to the built-in electric field in the MoSe 2 /FePS 3 n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.

The proliferation of lithium (Li) dendrites stemming from uncontrollable Li deposition seriously limits the practical application of Li metal batteries. The regulation of uniform Li deposition is thus a prerequisite for promoting a stable Li metal anode. Herein, a commercial lithiophilic skeleton of soybean protein fiber (SPF) is introduced to homogenize the Li-ion flux and induce the biomimetic Li growth behavior. Especially, the SPF can promote the formation of a LiF-nanocrystal-enriched interface upon cycling, resulting in low interfacial impedance and rapid charge transfer kinetics. Finally, the SPF-mediated Li metal anode can achieve high Coulombic efficiency of 98.7% more than 550 cycles and a long-term lifespan over 3400 h (∼8500 cycles) in symmetric tests. Furthermore, the practical pouch cell modified with SPF can maintain superior electrochemical performance over 170 cycles under a low N/P ratio and high mass loading of the cathode.

The development of layer-oriented two-dimensional conjugated metal-organic frameworks (2D c-MOFs) enables access to direct charge transport, dial-in lateral/vertical electronic devices, and the unveiling of transport mechanisms but remains a significant synthetic challenge. Here we report the novel synthesis of metal-phthalocyanine-based p-type semiconducting 2D c-MOF films (Cu 2 [PcM-O 8 ], M = Cu or Fe) with an unprecedented edge-on layer orientation at the air/water interface. The edge-on structure formation is guided by the preorganization of metal-phthalocyanine ligands, whose basal plane is perpendicular to the water surface due to their π-π interaction and hydrophobicity. Benefiting from the unique layer orientation, we are able to investigate the lateral and vertical conductivities by DC methods and thus demonstrate an anisotropic charge transport in the resulting Cu 2 [PcCu-O 8 ] film. The directional conductivity studies combined with theoretical calculation identify that the intrinsic conductivity is dominated by charge transfer along the interlayer pathway. Moreover, a macroscopic (cm 2 size) Hall-effect measurement reveals a Hall mobility of ∼4.4 cm 2 V -1 s -1 for the obtained Cu 2 [PcCu-O 8 ] film. The orientation control in semiconducting 2D c-MOFs will enable the development of various optoelectronic applications and the exploration of unique transport properties.

Intrinsic two-dimensional (2D) magnetic materials with room-temperature ferromagnetism and air stability are highly desirable for spintronic applications. However, the experimental observations of such 2D or ultrathin ferromagnetic materials are rarely reported owing to the scarcity of these materials in nature and for the intricacy in their synthesis. Here, we report a successful controllable growth of ultrathin γ-Fe 2 O 3 nanoflakes with a variety of morphologies tunable by the growth temperature alone using a facile chemical vapor deposition method and demonstrate that all ultrathin nanoflakes still show intrinsic room-temperature ferromagnetism and a semiconducting nature. The γ-Fe 2 O 3 nanoflakes epitaxially grown on α-Al 2 O 3 substrates take a triangular shape at low temperature and develop gradually in lateral size, forming eventually a large-scale γ-Fe 2 O 3 thin film as the growth time increases due to a thermodynamic control process. The morphology of the nanoflakes could be tuned from triangular to stellated, petaloid, and dendritic crystalloids in sequence with the rise of precursor temperature, revealing a growth process from thermodynamically to kinetically dominated control. Moreover, the petaloid and dendritic nanoflakes exhibit enhanced coercivity compared with the triangular and stellated nanoflakes, and all the nanoflakes with diverse shapes possess differing electrical conductivity. The findings of such ultrathin, air-stable, and room-temperature ferromagnetic γ-Fe 2 O 3 nanoflakes with tunable shape and multifunctionality may offer guidance in synthesizing other non-layered magnetic materials for next-generation electronic and spintronic devices.

π-Conjugated two-dimensional covalent organic frameworks (2D COFs) are emerging as a novel class of electroactive materials for (opto)electronic and chemiresistive sensing applications. However, understanding the intricate interplay between chemistry, structure, and conductivity in π-conjugated 2D COFs remains elusive. Here, we report a detailed characterization for the electronic properties of two novel samples consisting of Zn- and Cu-phthalocyanine-based pyrazine-linked 2D COFs. These 2D COFs are synthesized by condensation of metal-phthalocyanine (M = Zn and Cu) and pyrene derivatives. The obtained polycrystalline-layered COFs are p-type semiconductors both with a band gap of ∼1.2 eV. A record device-relevant mobility up to ∼5 cm 2 /(V s) is resolved in the dc limit, which represents a lower threshold induced by charge carrier localization at crystalline grain boundaries. Hall effect measurements (dc limit) and terahertz (THz) spectroscopy (ac limit) in combination with density functional theory (DFT) calculations demonstrate that varying metal center from Cu to Zn in the phthalocyanine moiety has a negligible effect in the conductivity (∼5 × 10 -7 S/cm), charge carrier density (∼10 12 cm -3 ), charge carrier scattering rate (∼3 × 10 13 s -1 ), and effective mass (∼2.3 m 0 ) of majority carriers (holes). Notably, charge carrier transport is found to be anisotropic, with hole mobilities being practically null in-plane and finite out-of-plane for these 2D COFs.

The multilayer 1T-TaSe 2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO 2 /Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe 2 . Temperature-dependent resistivity reveals that the multilayer 1T-TaSe 2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe 2 and HfSe 2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work., Competing Interests: The authors declare no competing financial interest., (Copyright © 2019 American Chemical Society.)

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO 3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

Systematic magnetic, electronic, and electrical studies on the Cu 0.04 Zn 0.96 O/Ga 0.01 Zn 0.99 O cell structure grown on (001) sapphire by the pulsed laser deposition technique show that the Cu multivalent (Cu M+ ) ions modulate magnetic and resistive states of the cells. The magnetic moment is found to be reduced by ∼30% during the high resistance state (HRS) to low resistance state (LRS) switching. X-ray photoelectron spectroscopy results reveals an increase of the Cu + /Cu 2+ oxidation state ratio (which has been determined by the relative positions of the Fermi level and the Cu acceptor level) during the HRS to LRS transition. This decreases the effective spin-polarized Cu 2+ -V ö -Cu + channels and thus the magnetic moment. A conduction mechanism involving the formation of conductive filaments from the coupling of the Cu M+ ions and V ö has been suggested., Competing Interests: The authors declare no competing financial interest.

Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

We report on the enhancement and modulation of nonlinear optical response in an Nd:Y 3 Al 5 O 12 (Nd:YAG) laser crystal through embedded silver nanoparticles (NPs) fabricated by Ag + ion implantation. The linear absorption spectrum of the sample clearly reveals a localized surface plasmon resonance (SPR) band from 350 to 700 nm correlated to the Ag NPs. By using the Z-scan technique with femtosecond pulses at a wavelength of 515 nm, which is considered as an optical excitation within the SPR band, the nonlinear refraction index reaches values as high as ∼10 -12 cm 2 /W, enhanced by ∼4 orders of magnitude in comparison to that of unimplanted Nd:YAG (without Ag NPs). In addition, it has been shown that embedded Ag NPs in the Nd:YAG host reveal saturable absorption signifying the nonlinear responses. We have also observed that the nonlinear absorption coefficients depend significantly on the excitation energy and can be modulated by varying the fluence of Ag + ions., Competing Interests: The authors declare no competing financial interest.

Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm(2)). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.

A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar(+) irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3 thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO3 surface are preferentially sputtered by Ar(+) ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO3 thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO3 thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.