1. CMOS-Compatible Wafer-Level Double-layer Silicon Nanograss through Reactive Ion Etching for Applications in Optics.
- Author
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Yu, Lihui, Zhang, Jingjing, Ye, Shujun, Zhao, Qiutong, Guo, Jingquan, and Wang, Yeliang
- Abstract
The modulation of the surface of silicon stimulates its applications in optics (antireflection surface, solar cells, and photoelectric devices). In this work, an appropriate ratio of the O
2 to SF6 plasma through reactive ion etching generated a double-layer Silicon nanograss (upper layerflocculent SiOx Fy passivation; lower layerpointy silicon spike) on the surface of the silicon wafer. The height and density of Silicon nanograss can be controlled through process parameters (pressure, O2 /SF6 ratio, and RF power), mask spacing, and a variety of assistant substrates. The underlying formation mechanisms of Silicon nanograss disclosed that the sputtering of Al substrate acts as a micromask, i.e., primarily responsible for the formation of Silicon nanograss. Considering an in-depth study, a simple, low-cost, and CMOS-compatible method for wafer-level preparation of Silicon nanograss is provided. Specifically, the Silicon nanograss exhibited excellent antireflection and enhanced absorption properties. This work contributes to micro-nano surface science accompanied by optical applications. [ABSTRACT FROM AUTHOR]- Published
- 2024
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