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Inorganic perovskite CsPbBr3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/ electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr3 NCs through doping of heterovalent Ce3+ ions via a facile hot-injection method. The Ce3+ cation was chosen as the dopant for CsPbBr3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce3+ in CsPbBr3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce3+-doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr3 NCs. As a result, the LED device fabricated by adopting Ce3+-doped CsPbBr3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce3+-doping. [ABSTRACT FROM AUTHOR]

Metal halide perovskites are promising semiconductors for next-generation light-emitting diodes (LEDs) due to their high luminance, excellent color purity, and handily tunable band gap. However, it remains a great challenge to develop perovskite LEDs (PeLEDs) with pure red emission at the wavelength of 630 nm. Herein, we report a spectrally stable and efficient pure red PeLED by employing sequential ligand post-treated CsPbI 3 quantum dots (QDs). The synthesized CsPbI 3 QDs with a size of ∼5 nm are treated in sequential steps using the ligands of 1-hydroxy-3-phenylpropan-2-aminium iodide (HPAI) and tributylsulfonium iodide (TBSI), respectively. The CsPbI 3 QD films exhibit improved optoelectronic properties, which enables the fabrication of a pure red PeLED with a peak external quantum efficiency (EQE) of 6.4% and a stable EL emission centered at the wavelength of 630 nm. Our reported sequential ligand post-treatment strategy opens a new route to improve the stability and efficiency of PeLEDs based on QDs.

Chiral chromophores and their ordered assemblies are intriguing for yielding circularly polarized luminescence (CPL) and exploring intrinsic structure-light emission relationships. With the extensively studied chiral organic molecules and inorganic nanoparticle assemblies for the amplified CPL, the assemblies of copper halide hybrid clusters have attracted intensive attention due to their potential efficient CPL. Here, we report robust chiral phosphine-copper iodide hybrid clusters and their layered assemblies in crystalline states for amplified CPL. We reveal that the intermolecular interactions endow the clusters with the capability of assembling into chiral crystalline CPL materials, including hexagonal platelet-shaped microcrystals ( g lum ≈ 9.5 × 10 -3 ) and highly oriented crystalline films ( g lum ≈ 5 × 10 -3 ). Owing to the high crystalline feature of the thin film, we demonstrate an electroluminescent device with bright electroluminescence (1200 cd m -2 ).

As one fundamental property of light, polarization has a huge impact in quantum optics and optoelectronics through light-matter interactions. However, the bright and near-unity polarized light emissions in the visible range by solid crystalline materials are scantly realized. Here, we report well-defined quasi two-dimensional (2D) hybrid crystals based on the linear alignment of Cu 2 I 2 -dimer/bidentate ligand hybrid clusters for achieving bright and near-unity linearly polarized light emissions. Using first-principle calculations, we demonstrate that the superaligned transition dipole moments are the key for the observed excellent polarized light emissions. To further enhance the photoluminescence (PL) polarization degree, we fabricate Cu 2 I 2 -dimer-based hybrid nanobelts, which display high PL quantum yield (up to 64%) and ultrahigh PL polarization degree (∼0.99). Our reported copper iodine cluster-based luminescent hybrid materials for bright and highly polarized light emissions will have great potential for future quantum optics applications.

Highly luminescent inks are desirable for various applications such as decorative coating, art painting, and anticounterfeiting, to name a few. However, present inks display low photoluminescent efficiency requiring a strong excitation light to make them glow. Here, we report a highly luminescent ink based on the copper-iodide/1-Propyl-1,4-diazabicyclo[2.2.2]octan-1-ium (Cu 4 I 6 (pr-ted) 2 ) hybrid cluster with a quantum efficiency exceeding 98%. Under the interaction between the Cu 4 I 6 (pr-ted) 2 hybrid cluster and polyvinylpyrrolidone (PVP), the highly luminescent Cu 4 I 6 (pr-ted) 2 /PVP ink can be facilely prepared via the one-pot solution synthesis. The obtained ink exhibits strong green light emission that originates from the efficient phosphorescence of Cu 4 I 6 (pr-ted) 2 nanocrystals. Attractively, the ink displays high conversion efficiency for the ultraviolet light to bright green light emission due to its wide Stokes shift, implying great potential for anticounterfeiting and luminescent solar concentrator coating.

All-inorganic lead halide perovskite nanocrystals (NCs) are potential candidates for fabricating high-performance light-emitting diodes (LEDs) owing to their precisely tunable bandgaps, high photoluminescence (PL) efficiency, and excellent color purities. However, the performance of pure red (630-640 nm) all-inorganic perovskite LEDs is still limited by the halide segregation-induced instability of the electroluminescence (EL) of mixed halide CsPbI 3- x Br x NCs. Herein, we report an effective approach to improving the EL stability of pure red all-inorganic CsPbI 3- x Br x NC-based LEDs via the passivation of potassium bromide on NCs. By adding potassium oleate to the reaction system, we obtained potassium bromide surface-passivated (KBr-passivated) CsPbI 3- x Br x NCs with pure red PL emission and a photoluminescence quantum yield (PLQY) exceeding 90%. We determine that most potassium ions present on the surface of NCs bind with bromide ions and thus demonstrate that potassium bromide surface passivation of NCs can both improve the PL stability and inhibit the halide segregation of NCs. Using KBr-passivated CsPbI 3- x Br x NCs as an emitting layer, we fabricated stable and pure red perovskite LEDs with emission at 637 nm, showing a maximum brightness of 2671 cd m -2 , maximum external quantum efficiency of 3.55%, and good EL stability. The proposed KBr-passivated NC strategy will open a new avenue for fabricating efficient, stable, and tunable pure color perovskite NC LEDs.

Cubic phase CsPbI 3 quantum dots (α-CsPbI 3 QDs) as a newly emerging type of semiconducting QDs hold tremendous promise for fundamental research and optoelectronic device applications. However, stable and sub-5 nm-sized α-CsPbI 3 QDs have rarely been demonstrated so far due to their highly labile ionic structure and low phase stability. Here, we report a novel strontium-substitution along with iodide passivation strategy to stabilize the cubic phase of CsPbI 3 , achieving the facile synthesis of α-CsPbI 3 QDs with a series of controllable sizes down to sub-5 nm. We demonstrate that the incorporation of strontium ions can significantly increase the formation energies of α-CsPbI 3 QDs and hence reduce the structure distortion to stabilize the cubic phase at the few-nanometer size. The size ranging from 15 down to sub-5 nm of as-prepared stable α-CsPbI 3 QDs allowed us to investigate their unique size-dependent optical properties. Strikingly, the few-nanometer-sized α-CsPbI 3 QDs turned out to retain high photoluminescence and highly close packing in solid state thin films, and the fabricated red light emitting diodes exhibited high brightness (1250 cd m -2 at 9.2 V) and good operational stability (L 50 > 2 h driven by 6 V). The developed cation-substitution strategy will provide an alternative method to prepare uniform and finely size-controlled colloidal lead halide perovskite QDs for various optoelectronic applications.

Photocoupler is a kind of semiconductor optoelectronic device that integrates light-emitting device (LED) and photodetector. It has found wide application in various fields because of its capability to transmit the electrical signal through the conversion of the electricity-light-electricity. Herein, we report the fabrication of a new photocoupler by simply integrating perovskite quantum dots LED and perovskite photodetector on a glass substrate. The as-fabricated photocoupler showed outstanding characteristics with high current transfer ratio (CTR) of 3.35%, which is highly competitive in comparison with other materials based devices. Furthermore, the perovskite photocoupler had a fast response speed of 8 μs/8.26 μs. By further adding an amplification circuit, the CTR could be enhanced by around 50 times to 172.6%. These results indicate that the present perovskite-based photocouplers may find potential application in future integrated circuit and optoelectronic system.

Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.