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Magnetic Weyl semimetals (MWSMs) exhibit unconventional transport phenomena, such as large anomalous Hall (and Nernst) effects, which are absent in spatial inversion asymmetry WSMs. Compared with its nonmagnetic counterpart, the magnetic state of a MWSM provides an alternative way for the modulation of topology. Spin-orbit torque (SOT), as an effective means of electrically controlling the magnetic states of ferromagnets, may be used to manipulate the topological magnetic states of MWSMs. Here we confirm the MWSM state of high-quality Co 2 MnGa film by systematically investigating the transport measurements and demonstrating that the magnetization and topology of Co 2 MnGa can be electrically manipulated. The electrical and magnetic optical measurements further reveal that the current-induced SOT switches the topological magnetic state in a 180-degree manner by applying positive/negative current pulses and in a 90-degree manner by alternately applying two orthogonal current pulses. This work opens up more opportunities for spintronic applications based on topological materials.

Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy Mn x Pt y Ge (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 10 10 Am -2 , as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.

Quantum dots (QDs) have attracted much attention as one of the most promising candidates for next-generation display materials. However, stability is still a big challenge for QDs. Herein, we encapsulated QDs in a thermoplastic polypropylene (PP) matrix by thermal processing technology to prepare a stabler color conversion film for the first time. Thermal processing technology expands the packaging materials of QDs from traditional soluble polymers to thermoplastic polymers such as PP with easy processing and a low cost. We showed that the QDs in the PP film exhibited longer-lasting stability than the traditional PMMA film. After 216 h of blue light accelerated aging test, the QDs maintained more than 90% of the initial performance in the PP film but dropped to less than 25% in the PMMA film. Moreover, the reasons for the improved stability have been further discussed. It was found that the PP-H film not only possessed better barriers to moisture and oxygen, but the absence of ester groups also led to a milder environment around the QDs. The results show that ester groups have stronger electronegativity and easily cause the ligands on the surface of QDs to fall off, which lead to performance degradation.

Current-induced spin-orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy consumption and high-speed writing. However, most of the SOT studies on perpendicularly magnetized anisotropy (PMA) magnets have been limited to heterostructures with interfacial PMA and poor thermal stability. Here, we experimentally demonstrate a SOT magnetization switching for a ferrimagnetic D0 22 -Mn 3 Ge film with high bulk PMA and robust thermal stability factor under a critical current density of 6.6 × 10 11 A m -2 through the spin Hall effect of an adjacent capping Pt and a buffer Cr layer. A large effective damping-like SOT efficiency of 2.37 mT/10 10 A m -2 is determined using harmonic measurements in the structure. The effect of the double-spin source layers and the negative-exchange interaction of the ferrimagnet may explain the large SOT efficiency and the manifested magnetization switching of Mn 3 Ge. Our findings demonstrate that D0 22 -Mn 3 Ge is a promising candidate for application in high-density SOT magnetic random-access memory devices.