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Formamidinium lead iodide (FAPbI 3 ) based hybrid perovskite light absorbers have shown remarkable performance in recent years. Since they have unique set of optoelectronic characteristics, they are considered as a good candidate absorber material for future solar cell applications. Until recently, much research had focused on the quantitative analysis of point defects on halide-based perovskite solar cells. Studies show that understanding defect mechanisms in perovskites has a huge impact on efficiency and stability improvements; however, such mechanisms have not been fully understood yet. Here, using first-principles calculations, we investigate the possible defect pair formations in FAPbI 3 , characterized by their formation energies and charge transitions. We found that while some donor and acceptor point defects are unstable and shallow when they are isolated, they form stable and deep-trap defect pairs and potentially limit the optoelectronic performance. We anticipate that our results will influence future discussions on the impact of defect formation on the performance and stability of perovskite solar cells.

Formamidinium lead iodide based hybrid perovskite materials with improved efficiency and stability still lack well-understood surface defect formation mechanisms. Controlling the surface termination and defects has the potential to improve the performance of both conventional 3D and latterly reduced-dimensional perovskites photovoltaics. Here, we characterized the termination and all possible defect formations in FAPbI 3 surface by the first-principles calculations. We found that, among the surfaces we considered, FAI-termination exhibits the most stable surface with a high defect tolerance. The PbI 2 -terminated surface is also found to be relatively stable; however, certain defects, such as electron-donating FA-interstitial and Pb-interstitial defects, can create deep-level stable charge-traps, potentially limiting the optoelectronic performance. We further investigate the surface treatment on these deep defects by model small molecule additives. We found that benzene additive with delocalized electron distribution can effectively passivate the deep FA-interstitial and Pb-interstitial defects by electron donating to the surface defect through charge-transfer.