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Three-dimensional porous nanoarchitectures on current collectors are effective for stabilizing Li metal anodes. However, developing these nanostructures in a simple and cost-effective manner is challenging. To address this, we propose a flashlight-based ultrafast and scalable method for manipulating nanoarchitectures on Cu foil. Cu-(OH)2 nanorods directly grown on Cu foil that are exposed to a flashlight can be photothermally activated to undergo ultrafast phase conversion to a mixed phase of Cu and CuxO while minimizing their structural collapse. The transformed hybrid nanorods have a sufficient pore volume, a large lithiophilic surface, and efficient electrical conduction to stabilize the lithium anode, thereby improving the long-term cycling stability and rate performance of the Li metal battery. Notably, capacity retention is observed to be ∼96% after 200 cycles at 0.5 C and ∼70% of its maximum capacity under a high-rate condition (5 C). Our simple approach enables ultrafast, large-area fabrication of nanoarchitectures that can stabilize the Li metal anode. We believe that further development in conjunction with a roll-to-roll process will accelerate the commercialization of Li metal batteries. [ABSTRACT FROM AUTHOR]

Large-area hierarchical grown transition metal dichalcogenide (TMD) nanostructures as out-of-plane directional layered TMD nanocrystals on a substrate could be considerably useful in electrochemical applications because of the high density of edge states. In this study, layered MoS2 nanocrystals less than 50 nm in diameter were synthesized by overlapping with each other as vertical growth in the form of a film with an area of 10 mm × 40 μm using metal–organic chemical vapor deposition (MOCVD) for the lateral growth of TMDs. Notably, in the spatial distribution, a singular point where the vertical growth is promoted was found through optical dark-field data and spatially resolved micro-Raman spectroscopy. The accelerated vertical growth region distinguished by the singular point is due to the layer-dependent dielectric constant of MoS2, which affects the surface energy and changes the conditions of vapor-phase deposition. In addition, with these phenomena, we discuss a way for expanding the hierarchical vertically grown MoS2 region on a substrate through analytical methods based on hydromechanics. [ABSTRACT FROM AUTHOR]

This paper describes the compatibility of poly(dimethyl-siloxane) (PDMS) with organic solvents; this compatibility is important in considering the potential of PDMS-based microfluidic devices in a number of applications, including that of microreactors for organic reactions. We considered three aspects of compatibility: the swelling of PDMS in a solvent, the partitioning of solutes between a solvent and PDMS, and the dissolution of PDMS oligomers in a solvent. Of these three parameters that determine the compatibility of PDMS with a solvent, the swelling of PDMS had the greatest influence. Experimental measurements of swelling were correlated with the solubility parameter, [delta] (call/2 [cm.sup.-3/2]), which is based on the cohesive energy densities, c (cal/[cm.sup.3]), of the materials. Solvents that swelled PDMS the least included water, nitromethane, dimethyl sulfoxide, ethylene glycol, perfluorotributylamine, perfluorodecalin, acetonitrile, and propylene carbonate; solvents that swelled PDMS the most were diisopropylamine, triethylamine, pentane, and xylenes. Highly swelling solvents were useful for extracting contaminants from bulk PDMS and for changing the surface properties of PDMS. The feasibility of performing organic reactions in PDMS was demonstrated by performing a Diels--Alder reaction in a microchannel.

This paper describes the compatibility of poly(dimethylsiloxane) (PDMS) with organic solvents; this compatibility is important in considering the potential of PDMS-based microfiuidic devices in a number of applications, including that of microreactors for organic reactions. We considered three aspects of compatibility: the swelling of PDMS in a solvent, the partitioning of solutes between a solvent and PDMS, and the dissolution of PDMS oligomers in a solvent Of these three parameters that determine the compatibility of PDMS with a solvent, the swelling of PDMS had the greatest influence. Experimental measurements of swelling were correlated with the solubility parameter, δ (cal1/2 cm-3/2), which is based on the cohesive energy densities, c (cal/cm[SUP3]), of the materials. Solvents that swelled PDMS the least included water, nitromethane, dimethyl sulfoxide, ethylene glycol, perfiuorotributylamine, perfiuorodecalin, acetonitrile, and propylene carbonate; solvents that swelled PDMS the most were diisopropylamine, triethylamine, pentane, and xylenes. Highly swelling solvents were useful for extracting contaminants from bulk PDMS and for changing the surface properties of PDMS. The feasibility of performing organic reactions in PDMS was demonstrated by performing a Diels-Alder reaction in a microchannel. [ABSTRACT FROM AUTHOR]

Plasmon resonance using metal nanostructures enables the realization of high-performance optoelectronic devices via field enhancements in the vicinity of the metal nanostructure. This study proposes an ultrabroadband MoS 2 photodetector based on the gap-mode plasmon of gold nanorods. The use of MoS 2 as a gap spacer for the gap-mode plasmon effect and as a channel material for the photodetector is demonstrated. The proposed photodetector demonstrates superior performance, a high photoresponsivity of 2.8 A/W at a near-infrared wavelength of 1100 nm, and a fast response time of 17 μs. In addition to the gap-mode plasmon effect of the gold nanorod enhancing the photoresponsivity from 1.13 to 8.7 A/W, the lateral surface plasmon resonance of the gold nanorods enhances the absorption of the longitudinal mode of the gold nanorods (near-infrared to infrared range). Further, the gap-mode plasmon effect of the gold nanorods enhances the absorption of the transverse mode of the gold nanorods (visible range), thus realizing ultrabroadband photodetection. Therefore, the proposed device design strategy contributes significantly to overcoming the trade-off between photoresponsivity and response time.

Molybdenum disulfide (MoS 2 ) is a promising candidate for next-generation transistor channel materials, boasting outstanding electrical properties and ultrathin structure. Conventional ion implantation processes are unsuitable for atomically thin two-dimensional (2D) materials, necessitating nondestructive doping methods. We proposed a novel approach: tunable n-type doping through sulfur vacancies (V S ) and p-type doping by nitrogen substitution in MoS 2 , controlled by the duration of NH 3 plasma treatment. Our results reveal that NH 3 plasma exposure of 20 s increases the 2D sheet carrier density ( n 2D ) in MoS 2 field-effect transistors (FETs) by +4.92 × 10 11 cm -2 at a gate bias of 0 V, attributable to sulfur vacancy generation. Conversely, treatment of 40 s reduces n 2D by -3.71 × 10 11 cm -2 due to increased nitrogen doping. X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence analyses corroborate these electrical characterization results, indicating successful n- and p-type doping. Temperature-dependent measurements show that the Schottky barrier height at the metal-semiconductor contact decreases by -31 meV under n-type conditions and increases by +37 meV for p-type doping. This study highlights NH 3 plasma treatment as a viable doping method for 2D materials in electronic and optoelectronic device engineering.

As semiconductor scaling continues to reach sub-nanometer levels, two-dimensional (2D) semiconductors are emerging as a promising candidate for the post-silicon material. Among these alternatives, Bi 2 O 2 Se has risen as an exceptionally promising 2D semiconductor thanks to its excellent electrical properties, attributed to its appropriate bandgap and small effective mass. However, unlike other 2D materials, growth of large-scale Bi 2 O 2 Se films with precise layer control is still challenging due to its large surface energy caused by relatively strong interlayer electrostatic interactions. Here, we present the successful growth of a wafer-scale (∼3 cm) Bi 2 O 2 Se film with precise thickness control down to the monolayer level on TiO 2 -terminated SrTiO 3 using metal-organic chemical vapor deposition (MOCVD). Scanning transmission electron microscopy (STEM) analysis confirmed the formation of a [BiTiO 4 ] 1- interfacial structure, and density functional theory (DFT) calculations revealed that the formation of [BiTiO 4 ] 1- significantly reduced the interfacial energy between Bi 2 O 2 Se and SrTiO 3 , thereby promoting 2D growth. Additionally, spectral responsivity measurements of two-terminal devices confirmed a bandgap increase of up to 1.9 eV in monolayer Bi 2 O 2 Se, which is consistent with our DFT calculations. Finally, we demonstrated high-performance Bi 2 O 2 Se field-effect transistor (FET) arrays, exhibiting an excellent average electron mobility of 56.29 cm 2 /(V·s). This process is anticipated to enable wafer-scale applications of 2D Bi 2 O 2 Se and facilitate exploration of intriguing physical phenomena in confined 2D systems.

To overcome the image deterioration caused by pixel miniaturization resulting from the high-resolution trend of CIS (CMOS image sensor) technology, a photodiode working with an enhanced mechanism based on a distinctive device structure from the existing one is considerably required. In this study, our photodiode, consisting of gold nanoparticles/monolayer graphene/n-type trilayer MoS 2 /p-type Si bulk, achieved ultrafast rising/falling times of 28.6 ns/30.4 ns due to the spatially confined narrow depletion width (DW) resulting from the 2D/3D heterojunction. To compensate for the expected low absorbance due to the narrow DW, plasmonic gold nanoparticles on monolayer graphene are introduced, revealing broadband enhanced EQE of an average of 187% in the spectral range of 420-730 nm and the maximum EQE reaching 847% at 5 nW for a 520 nm wavelength. The broadband enhancement was further investigated through multiphysics simulation, and carrier multiplication in graphene was discussed for the reason for exceeding 100% EQE in our reverse biased photodiode.

The development of electrodes with high conductivity, optical transparency, and reliable mechanical flexibility and stability is important for numerous solution-processed photoelectronic applications. Although transparent Ti 3 C 2 T X MXene electrodes with high conductivity are promising, their suitability for displays remains limited because of the high sheet resistance, which is caused by undesirable flake junctions and surface roughness. Herein, a flexible and transparent electrode has been fabricated that is suitable for a full-solution-processed quantum dot light-emitting diode (QLED). An MXene-silver nanowire (AgNW) hybrid electrode (MXAg) consists of a highly conductive AgNW network mixed with solution-processed MXene flakes. Efficient welding of wire-to-wire junctions with MXene flakes yields an electrode with a low sheet resistance and a high transparency of approximately 13.9 Ω sq -1 and 83.8%, respectively. By employing a thin polymer buffer layer of poly(methyl methacrylate) (PMMA), followed by mild thermal treatment, a hybrid PMMA-based MXene-AgNW (MXAg@PMMA) electrode in which the work function of an MXAg hybrid FTE physically embedded in PMMA (MXAg@PMMA) can be tuned by controlling the amount of MXene in the hybrid film facilitates the development of a high-performance solution-processed QLED that exhibits maximum external quantum and current efficiencies of approximately 9.88% and 25.8 cd/A, respectively, with excellent bending stability. This work function-tunable flexible transparent electrode based on solution-processed nanoconductors provides a way to develop emerging high-performance, wearable, cost-effective, and soft electroluminescent devices.

Extrasensory neuromorphic devices that can recognize, memorize, and learn stimuli imperceptible to human beings are of considerable interest in interactive intelligent electronics research. This study presents an artificially intelligent magnetoreceptive synapse inspired by the magnetocognitive ability used by birds for navigation and orientation. The proposed synaptic platform is based on arrays of ferroelectric field-effect transistors with air-suspended magneto-interactive top-gates. A suspended gate of an elastomeric composite with superparamagnetic particles laminated with an electrically conductive polymer is mechanically deformed under a magnetic field, facilitating control of the magnetic-field-dependent contact area of the suspended gate with an underlying ferroelectric layer. The remanent polarization of the ferroelectric layer is electrically programmed with the deformed suspended gate, resulting in analog conductance modulation as a function of the magnitude, number, and time interval of the input magnetic pulses. The proposed extrasensory magnetoreceptive synapse may be used as an artificially intelligent synaptic compass that facilitates barrier-adaptable navigation and mapping of a moving object.

The growth control of a molybdenum disulfide (MoS 2 ) thin film, including the number of layers, growth rate, and electrical property modulation, remains a challenge. In this study, we synthesized MoS 2 thin films using the metal-organic chemical vapor deposition (MOCVD) method with a 2 inch wafer scale and achieved high thickness uniformity according to the positions on the substrate. In addition, we successfully controlled the number of MoS 2 layers to range from one to five, with a growth rate of 10 min per layer. The layer-dependent optical and electrical properties were characterized by photoluminescence, Raman spectroscopy, differential reflectance spectroscopy, and field effect transistors. To guide the growth of MoS 2 , we summarized the relation between the growth aspects and the precursor control in the form of a growth map. Reference to this growth map enabled control of the growth rate, domain density, and domain size according to the application purposes. Finally, we confirmed the electrical performance of MOCVD-grown MoS 2 with five layers under a high-κ dielectric environment, which exhibited an on/off current ratio of 10 ∼6 and a maximum field effect mobility of 8.6 cm 2 V -1 s -1 .

MXenes (Ti 3 C 2 T X ) are two-dimensional transition-metal carbides and carbonitrides with high conductivity and optical transparency. However, transparent MXene electrodes with high environmental stability suitable for various flexible organic electronic devices have rarely been demonstrated. By laminating a thin polymer film onto a solution-processed MXene layer to protect the MXene film from harsh environmental conditions, we present transparent and flexible MXene electronic devices. A thin polymer layer spin-coated onto a transparent MXene electrode provides environmental stability even under air exposure longer than 7 d at high temperatures (up to 70 °C) and humidity levels (up to 50%) without degrading the transparency of the electrode. The resulting polymer-laminated (PL) MXene electrode facilitates the development of a variety of field-driven photoelectronic devices by exploiting the electric field exerted between the MXene layer and the counter electrode through the insulating polymer. Field-induced electroluminescent displays, based on both organic and inorganic phosphors, with PL-MXene electrodes are demonstrated with high transparency and mechanical flexibility. Furthermore, our PL-MXene electrode exhibits high versatility through successful implementation in capacitive-type pressure sensors and triboelectric nanogenerators, resulting in field-driven sensing and energy harvesting electronic devices with excellent operation reliability.

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides ( i.e. , MoS 2 ). Among ternary metal-oxy-chalcogenides, especially Bi 2 O 2 Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi 2 O 2 Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi 2 O 2 Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi 2 O 2 Se. The resulting Bi 2 O 2 Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi 2 O 2 Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm 2 /(V·s) and photoresponsivity of 45134 A/W.

Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe 2 and MoS 2 was developed. The MoS 2 was utilized as the channel for a phototransistor, whereas the WSe 2 -MoS 2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer. The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 10 6 . The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 10 11 Jones, and response time of 17 ms. The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications.

Despite the great interest in inorganic halide perovskites (IHPs) for a variety of photoelectronic applications, environmentally robust nanopatterns of IHPs have hardly been developed mainly owing to the uncontrollable rapid crystallization or temperature and humidity sensitive polymorphs. Herein, we present a facile route for fabricating environment- and phase-stable IHP nanopatterns over large areas. Our method is based on nanoimprinting of a soft and moldable IHP adduct. A small amount of poly(ethylene oxide) was added to an IHP precursor solution to fabricate a spin-coated film that is soft and moldable in an amorphous adduct state. Subsequently, a topographically prepatterned elastomeric mold was used to nanoimprint the film to develop well-defined IHP nanopatterns of CsPbBr 3 and CsPbI 3 of 200 nm in width over a large area. To ensure environment- and phase-stable black CsPbI 3 nanopatterns, a polymer backfilling process was employed on a nanopatterned CsPbI 3 . The CsPbI 3 nanopatterns were overcoated with a thin poly(vinylidene fluoride- co -trifluoroethylene) (PVDF-TrFE) film, followed by thermal melting of PVDF-TrFE, which formed the air-exposed CsPbI 3 nanopatterns laterally confined with PVDF-TrFE. Our polymer backfilled CsPbI 3 nanopatterns exhibited excellent environmental stability over one year at ambient conditions and for 10 h at 85 °C, allowing the development of arrays of two-terminal, parallel-type photodetectors with nanopatterned photoactive CsPbI 3 channels. Our polymer-assisted nanoimprinting offers a fast, low-pressure/temperature patterning method for high-quality nanopatterns on various substrates over a large area, overcoming conventional costly time-consuming lithographic techniques.

This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS 2 channel, and GaS gate insulator. The transistor exhibits a subthreshold swing of 63 mV/dec, an on/off ratio over 10 6 within a gate voltage of 0.4 V, and peak mobility of 83 cm 2 /(V s) at room temperature. The low-frequency noise characteristics were investigated and described by the Hooge mobility fluctuation model. The results suggest that the van der Waals heterostructure of 2D semiconductors can produce a high-performing interface without dangling bonds and defects caused by lattice mismatch. Furthermore, a logic inverter and a NAND gate are demonstrated, with an inverter voltage gain of 14.5, which is higher than previously reported by MoS 2 -based transistors with oxide dielectrics. Therefore, this transistor based on van der Waals heterostructure exhibits considerable potential in digital logic applications with low-power integrated circuits.

A triboelectric nanogenerator (TENG) is of tremendous interest owing to its high energy efficiency with a simple device architecture and applicability to various materials. Most previous topological surface modifications introduced for further improving the performance of a TENG are detrimental because they require expensive and/or harsh (e.g., high temperature and acidity) postetching processes, which limit the material choice and design of its components. Herein, we demonstrate an one-step route for developing rapid wet-processable surface-conformal triboelectric nanoporous films (STENFs). Our method is based on a simple supramolecular assembly of a ternary polymer blend suitable for various conventional solution processes such as spin-, bar-, spray-, and dip-coating. The one-step wet process of a ternary solution produces thin large-area films in which self-assembled, ordered nanopores of approximately 33 nm in diameter are developed even without an additional etching process. The study reveals that the small amount of amine-terminated poly(ethylene oxide) added to the binary blend of sulfonic-acid-terminated poly(styrene) and poly(2-vinylpyridine) efficiently activates the formation of spontaneous nanopores as a pore-generating agent. Our STENF significantly enhances the open-circuit voltage up to 1.5 times higher than that of a planar one, leading to an improved power density of approximately 77 μW/cm 2 . The suitability for diverse conventional coating processes offers a convenient approach for fabricating high-performance STENFs not only on flat substrates such as metals, polymers, and oxides but also on topological ones including wrinkled, roughened surfaces, textile fibers, natural leaves, and fabrics over a large area.

The development of high-performance printable electrical circuits, particularly based on liquid metals, is fundamental for device interconnection in flexible electronics, motivating numerous attempts to develop a variety of alloys and their composites. Despite their great potential, rewritable and printable electronic circuits based on liquid metals are still manufactured on demand. In this study, we demonstrate liquid metal-based hydrogels suitable for rewritable, printable electrical circuits. Our liquid metal hydrogels are based on sedimentation-induced composites of eutectic gallium-indium (EGaIn) particles in poly(ethylene glycol) diacrylate (PEGDA). The EGaIn particles are vertically phase-segregated in the PEGDA. When a composite surface with high EGaIn content is gently scratched, the surface covering PEGDA is removed, followed by the rupture of the native oxide layers of the particles, and the exposed EGaIn becomes conductive. The subsequent water-driven swelling of PEGDA on the scratched surface completely erases the conductive circuit, causing the system to reset. Our friction-responsive liquid metal hydrogel exhibits writing-erasing endurance for 20 cycles, with a dramatic change in the electrical resistance from metal (∼1 Ω) to insulator (∼10 7 Ω). By employing surface friction pen printing, we demonstrate mechanically flexible, rewritable, printable electrical conductors suitable for displays.

Prior to the advent of the next-generation heater for wearable/on-body electronic devices, various properties are required, including conductivity, transparency, mechanical reliability, and conformability. Expansion to two-dimensional (2D) structure of metallic nanowires based on network- and mesh-type geometries has been widely exploited for realizing these heaters. However, the routes led to many drawbacks such as the low-density cross-bar linking, self-aggregation of wire, and high junction resistance. Although 2D carbon nanomaterials such as graphene and reduced graphene oxide (rGO) have shown their potentials for the purpose, CVD-grown graphene with sufficiently high conductivity was limited due to its poor processability for large-area applications, while rGO fabricated with a complex reduction process involving the use of toxic chemicals suffered from a low electrical conductivity. In this study, we demonstrate a simple and robust process, utilizing electrostatic assembling of negatively charged MXene flakes on a positively treated surface of substrate, for fabricating a metal-like 2D MXene thin film heater (TFH). Our TFH showed a high optical property (>65%), low sheet resistance (215 Ω/sq), fast electrothermal response (within dozens of seconds) with an intrinsically high electrical conductivity, and mechanical flexibility (up to 180° bending). Its capability for forming a firm and stable ionic-type interface with a counterpart surface allows us to develop a shape-adaptable and patchable thread heater (TH) that can be shaped on diverse substrates even under harsh conditions of conventional sewing or weaving processes. This work suggests that our shape-adaptable MXene heaters are potentially suitable not only for wearable devices for local heating and defrosting but also for a variety of emerging applications of soft actuators and wearable/flexible healthcare monitoring and thermotherapy.

Two-dimensional (2D) nanosheets of transition metal dichalcogenides (TMDs) are of significant interest for potential photoelectronic applications. However, the fabrication of solution-processed arrays of mechanically flexible thin TMD films-based vertical type p-n junction photodetectors over a large area is a great challenge. Our method is based on controlled solvent evaporation of MoSe 2 suspension spread on water surface. Single or few-layered MoSe 2 nanosheets modified with the dispersant amine-terminated poly(styrene) (PS-NH 2 ) were homogeneously deposited and stacked on water upon solvent evaporation, giving rise to uniform MoSe 2 /PS-NH 2 composite films that can be readily transferred onto other substrates. A p-n junction vertical diode of Al/p-type Si/p-type poly(9,9-di- n-octylfluorenyl-2,7-diyl)/n-type MoSe 2 composite/Au stacked from bottom to top exhibited characteristic rectifying current behavior upon voltage sweep with a rectification ratio of 10 3 . Subsequent illumination of near-infrared light on the device resulted in a substantially enhanced dark current of approximately 10 3 times greater than that of the nonexposed device. The photodetection performance, that is, switching time, responsivity, and detectivity, were 100.0 ms, 2.5 AW -1 , and 2.34 × 10 14 , respectively. Furthermore, the performance of mechanically flexible photodetectors devices was comparable with that of the devices fabricated on the hard Si substrate even after 1000 bending cycles at a bending diameter of 7.2 mm.

Simultaneous sensing and visualization of pressure provides a useful platform to obtain information about a pressurizing object, but the fabrication of such interactive displays at the single-device level remains challenging. Here, we present a pressure responsive electroluminescent (EL) display that allows for both sensing and visualization of pressure. Our device is based on a two-terminal capacitor with six constituent layers: top electrode/insulator/hole injection layer/emissive layer/electron transport layer/bottom electrode. Light emission upon exposure to an alternating current field between two electrodes is controlled by the capacitance change of the insulator arising from the pressure applied on top. Besides capacitive pressure sensing, our EL display allows for direct visualization of the static and dynamic information of position, shape, and size of a pressurizing object on a single-device platform. Monitoring the pressurized area of an elastomeric hemisphere on a device by EL enables quantitative estimation of the Young's modulus of the elastomer, offering a new and facile characterization method for the mechanical properties of soft materials.

We report femtosecond infrared laser-induced selective tailoring of carrier transport as well as surface morphology on a conducting polymer blend thin film. Maximal 2.4 times enhancement on vertical current transport in poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester, was achieved by this irradiation. The laser irradiation induced a photo expansion without deteriorating its molecular structure and the film morphology could be customized in the micron scale by adjusting the laser writing parameters. In the photoexpanded region, the face-on populations were about 2.2 times larger in comparison with the pristine region, which was a major contributor to the enhanced carrier transport.

Sophisticated preparation of arbitrarily long conducting nanowire electrodes on a large area is a significant requirement for development of transparent nanoelectronics. We report a position-customizable and room-temperature-processable metallic nanowire (NW) electrode array using aligned NW templates and a demonstration of transparent all-NW-based electronic applications by simple direct-printing. Well-controlled electroless-plating chemistry on a polymer NW template provided a highly conducting Au NW array with a very low resistivity of 7.5 μΩ cm (only 3.4 times higher than that of bulk Au), high optical transmittance (>90%), and mechanical bending stability. This method enables fabrication of all-NW-based electronic devices on various nonplanar surfaces and flexible plastic substrates. Our approach facilitates realization of advanced future electronics.

The development of pressure sensors that are effective over a broad range of pressures is crucial for the future development of electronic skin applicable to the detection of a wide pressure range from acoustic wave to dynamic human motion. Here, we present flexible capacitive pressure sensors that incorporate micropatterned pyramidal ionic gels to enable ultrasensitive pressure detection. Our devices show superior pressure-sensing performance, with a broad sensing range from a few pascals up to 50 kPa, with fast response times of <20 ms and a low operating voltage of 0.25 V. Since high-dielectric-constant ionic gels were employed as constituent sensing materials, an unprecedented sensitivity of 41 kPa -1 in the low-pressure regime of <400 Pa could be realized in the context of a metal-insulator-metal platform. This broad-range capacitive pressure sensor allows for the efficient detection of pressure from a variety of sources, including sound waves, a lightweight object, jugular venous pulses, radial artery pulses, and human finger touch. This platform offers a simple, robust approach to low-cost, scalable device design, enabling practical applications of electronic skin.

Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

While tremendous efforts have been made for developing thin perovskite films suitable for a variety of potential photoelectric applications such as solar cells, field-effect transistors, and photodetectors, only a few works focus on the micropatterning of a perovskite film which is one of the most critical issues for large area and uniform microarrays of perovskite-based devices. Here we demonstrate a simple but robust method of micropatterning a thin perovskite film with controlled crystalline structure which guarantees to preserve its intrinsic photoelectric properties. A variety of micropatterns of a perovskite film are fabricated by either microimprinting or transfer-printing a thin spin-coated precursor film in soft-gel state with a topographically prepatterned elastomeric poly(dimethylsiloxane) (PDMS) mold, followed by thermal treatment for complete conversion of the precursor film to a perovskite one. The key materials development of our solvent-assisted gel printing is to prepare a thin precursor film with a high-boiling temperature solvent, dimethyl sulfoxide. The residual solvent in the precursor gel film makes the film moldable upon microprinting with a patterned PDMS mold, leading to various perovskite micropatterns in resolution of a few micrometers over a large area. Our nondestructive micropatterning process does not harm the intrinsic photoelectric properties of a perovskite film, which allows for realizing arrays of parallel-type photodetectors containing micropatterns of a perovskite film with reliable photoconduction performance. The facile transfer of a micropatterned soft-gel precursor film on other substrates including mechanically flexible plastics can further broaden its applications to flexible photoelectric systems.

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

One-dimensional photonic crystals based on the periodic stacking of two different dielectric layers have been widely studied, but the fabrication of mechanically flexible polymer structural color (SC) films, with electro-active color switching, remains challenging. Here, we demonstrate free-standing electric field tunable ionic liquid (IL) swollen block copolymer (BCP) films. Placement of a polymer/ionic liquid film-reservoir adjacent to a self-assembled poly(styrene-block-quaternized 2-vinylpyridine) (PS-b-QP2VP) copolymer SC film allowed the development of red (R), green (G), and blue (B) full-color SC block copolymer films by swelling of the QP2VP domains by the ionic liquid associated with water molecules. The IL-polymer/BCP SC film is mechanically flexible with excellent color stability over several days at ambient conditions. The selective swelling of the QP2VP domains could be controlled by both the ratio of the IL to a polymer in the gel-like IL reservoir layer and by an applied voltage in the range of -3 to +6 V using a metal/IL reservoir/SC film/IL reservoir/metal capacitor type device.

Design of materials to be heat-conductive in a preferred direction is a crucial issue for efficient heat dissipation in systems using stacked devices. Here, we demonstrate a facile route to fabricate polymer composites with directional thermal conduction. Our method is based on control of the orientation of fillers with anisotropic heat conduction. Melt-compression of solution-cast poly(vinylidene fluoride) (PVDF) and graphene nanoflake (GNF) films in an L-shape kinked tube yielded a lightweight polymer composite with the surface normal of GNF preferentially aligned perpendicular to the melt-flow direction, giving rise to a directional thermal conductivity of approximately 10 W/mK at 25 vol % with an anisotropic thermal conduction ratio greater than six. The high directional thermal conduction was attributed to the two-dimensional planar shape of GNFs readily adaptable to the molten polymer flow, compared with highly entangled carbon nanotubes and three-dimensional graphite fillers. Furthermore, our composite with its density of approximately 1.5 g/cm(3) was mechanically stable, and its thermal performance was successfully preserved above 100 °C even after multiple heating and cooling cycles. The results indicate that the methodology using an L-shape kinked tube is a new way to achieve polymer composites with highly anisotropic thermal conduction.