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With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties. [ABSTRACT FROM AUTHOR]

By converting ambient energy into electricity, energy harvesting is capable of at least offsetting, or even replacing, the reliance of small portable electronics on traditional power supplies, such as batteries. Here we demonstrate a novel and simple generator with extremely low cost for efficiently harvesting mechanical energy that is typically present in the form of vibrations and random displacements/deformation. Owing to the coupling of contact charging and electrostatic induction, electric generation was achieved with a cycled process of contact and separation between two polymer films. A detailed theory is developed for understanding the proposed mechanism. The instantaneous electric power density reached as high as 31.2 mW/cm3 at a maximum open circuit voltage of 110 V. Furthermore, the generator was successfully used without electric storage as a direct power source for pulse electrodeposition (PED) of micro/nanocrystalline silver structure. The cathodic current efficiency reached up to 86.6%. Not only does this work present a new type of generator that is featured by simple fabrication, large electric output, excellent robustness, and extremely low cost, but also extends the application of energy-harvesting technology to the field of electrochemistry with further utilizations including, but not limited to, pollutant degradation, corrosion protection, and water splitting. [ABSTRACT FROM AUTHOR]

Nanowire solar cells are promising candidates for poweringnanosystemsand flexible electronics. The strain in the nanowires, introducedduring growth, device fabrication and/or application, is an importantissue for piezoelectric semiconductor (like CdS, ZnO, and CdTe) basedphotovoltaic. In this work, we demonstrate the first largely enhancedperformance of n-CdS/p-Cu2S coaxial nanowire photovoltaic(PV) devices using the piezo-phototronics effect when the PV deviceis subjected to an external strain. Piezo-phototronics effect couldcontrol the electron–hole pair generation, transport, separation,and/or recombination, thus enhanced the performance of the PV devicesby as high as 70%. This effect offers a new concept for improvingsolar energy conversation efficiency by designing the orientationof the nanowires and the strain to be purposely introduced in thepackaging of the solar cells. This study shed light on the enhancedflexible solar cells for applications in self-powered technology,environmental monitoring, and even defensive technology. [ABSTRACT FROM AUTHOR]

The interfacial pyro-phototronic effect (IPPE) presents a novel approach for improving the performance of self-powered photodetectors (PDs) based on metal halide perovskites (MHPs). The interfacial contact conditions within the Schottky junctions are crucial in facilitating the IPPE phenomenon. However, the fabrication of an ideal Schottky junction utilizing MHPs is a challenging endeavor. In this study, we present a surface passivation method aimed at enhancing the performance of self-powered photodetectors based on inverted planar perovskite structures in micro- and nanoscale metal-halide perovskite SCs. Our findings demonstrate that the incorporation of a lead halide salt with a benzene ring moiety for surface passivation leads to a substantial improvement in photoresponses by means of the IPPE. Conversely, the inclusion of an alkane chain in the salt impedes the IPPE. The underlying mechanism can be elucidated through an examination of the band structure, particularly the work function (WF) modulated by surface passivation. Consequently, this alteration affects the band bending and the built-in field ( V Bi ) at the interface. This strategy presents a feasible and effective method for producing interfacial pyroelectricity in MHPs, thus facilitating its potential application in practical contexts such as energy conversion and infrared sensors.

Halide perovskites featuring remarkable optoelectronic properties hold great potential for threshold switching devices (TSDs) that are of primary importance to next-generation memristors and neuromorphic computers. However, such devices are still in their infancy due to the unsolved challenges of high threshold voltage, poor stability, and lead-containing features. Herein, a unipolar TSD based on an all-inorganic halide perovskite of CsCu 2 I 3 is demonstrated, exhibiting the fascinating attributes of a low threshold voltage of 0.54 V, a high ON/OFF ratio of 10 4 , robust air stability over 70 days, a steep switching slope of 6.2 mV·decade -1 , and lead-free composition. Moreover, the threshold voltage can be further reduced to 0.23 V using UV illumination to reduce the barrier of iodide ion migration. The multilevel threshold switching behavior can be realized through the modulation of either the compliance current or the scan rate. The TSD with mechanical compliance and transparency is also demonstrated. This work enriches TSDs with expanded perovskite materials, boosting the related applications of this emerging class of device families.

Tactile information is efficiently captured and processed through a complex sensory system combined with mechanoreceptors, neurons, and synapses in human skin. Synapses are essential for tactile signal transmission between pre/post-neurons. However, developing an electronic device that integrates the functions of tactile information sensation and transmission remains a challenge. Here, we present a piezotronic synapse based on a single GaN microwire that can simultaneously achieve the capabilities of strain sensing and synaptic functions. The piezotronic effect in the wurtzite GaN is introduced to strengthen synaptic weight updates (e.g., 330% enhancement at a compressive stress of -0.36%) with pulse trains. A high gauge factor for strain sensing (ranging from 0 to -0.81%) of about 736 is also obtained. Remarkably, the piezotronic synapse enables the neuromorphic hardware achievement of the perception and processing of tactile information in a single micro/nanowire system, demonstrating an advance in biorealistic artificial intelligence systems.

Electronic skin (e-skin) uses advanced electronics and sensor arrays to manufacture human-skin-like robotics skin. The creation of e-skin has been made possible due to various physics effects/mechanisms, innovative materials, structural designs, and advanced fabrication techniques. In this Perspective, we describe the current advances in and emerging uses of e-skin for closed-loop systems, with a view toward applications in smart robotics, Internet of Things, and human-machine interfaces.

As an ideal miniaturized light source, wavelength-tunable nanolasers capable of emitting a wide spectrum stimulate intense interests for on-chip optoelectronics, optical communications, and spectroscopy. However, realization of such devices remains a major challenge because of extreme difficulties in achieving continuously reversibly tunable gain media and high quality (Q)-factor resonators on the nanoscale simultaneously. Here, exploiting single bandgap-graded CdSSe NWs and a Fabry-Pérot/whispering gallery mode (FP/WGM) coupling cavity, a free-standing fiber-integrated reversibly wavelength-tunable nanolaser covering a 42 nm wide spectrum at room temperature with high stability and reproducibility is demonstrated. In addition, a 1.13 nm tuning spectral resolution is realized. The substrate-free device design enables integration in optical fiber communications and information. With reversible and wide, continuous tunability of emission color and precise control per step, our work demonstrates a general approach to nanocavity coupling affording high Q-factors, enabling an ideal miniaturized module for a broad range of applications in optics and optoelectronics, with optical fiber integration.

Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO 2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO 2 /PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.

Realizing dynamic wavelength tunability could bring about tremendous impacts in laser technology, pressure nanosensing, and lab-on-a-chip devices. Here, we demonstrate an original strategy to operate the lasing mode shift through reversible length changes of a CdS nanobelt, which is determined by the direction of piezoelectric polarization. The relationships between the direction of applied strain, the lasing mode shift, and the tunable effective refractive index are elaborated in detail. The correlation between the piezoelectric polarization-induced lasing mode red shift and the blue shift in the wavelength of the lasing mode output caused by the Poisson effect is discussed in depth, as well. Our study comprehensively considers the influence of both the cavity size variations and refractive index changes on the control of the lasing mode and provides a deeper understanding of the strain-induced lasing mode shift.

Tremendous work has been made recently to improve the power conversion efficiencies (PCEs) of perovskite solar cells (PSCs); the best reported value is now over 23%. However, further improving the PCEs of PSCs is challenged by material properties, device stability, and packaging technologies. Here, we report a new approach to increase the PCEs of flexible PSCs via introducing the piezo-phototronic effect in the PSCs by growing an array of ZnO nanowires on flexible plastic substrates, which act as the electron-transport layer for PSCs. From the piezo-phototronic effect, the absolute PCE was improved from 9.3 to 12.8% for flexible perovskite solar cells under a static mechanical strain of 1.88%, with a ∼40% enhancement but no change in the components of materials and device structure. A corresponding working model was proposed to elucidate the strategy to boost the performance of the PSCs. These findings present a general approach to improve PCEs of flexible PSCs without changing their fundamental materials.

We report a dynamic tuning on coherent light emission wavelengths of single ZnO microwire by using the piezoelectric effect. Owing to the dominant role occupied by the piezoelectric polarization effect in the wurtzite-structure ZnO microwire, the effective dielectric constant (or refraction index) of the gain media was modulated toward an increasing trend by applying a tensile strain, resulting in a shift of the strain-mediated whispering-gallery mode (WGM) lasing at room temperature. Also, the strain required to resolve the spectra in the two operating types of PL and lasing were systematically analyzed and compared. Because of the narrow line width in the lasing mode, the strain-dependent spectral resolution was improved by an order of magnitude, making it feasible for achieving high-precision, ultrasensitive, and noncontact stress sensing. Our results have an important impact on laser modulation, optical communication, and optical sensing technology.

Piezoelectric organic-inorganic lead halide perovskites have recently attracted much attention in the field of optoelectronic devices. However, their piezoelectric properties as a possible way to modulate device performances have rarely been reported. Here, we study experimentally a photodetector based on CH 3 NH 3 PbI 3 (MAPbI 3 ) single crystals, whose performance is effectively modulated via an emerging effect-the piezo-phototronic effect, which is to use the piezoelectric polarization charges to tune the optoelectronic processes at the interface. A piezoelectric coefficient of 10.81 pm/V of the CH 3 NH 3 PbI 3 single crystal is obtained. Under 680 nm laser illumination with a power density of 3.641 mW/cm 2 and at an external bias of 2 V, compared to the case without straining, the light current of the photodetector is enhanced by ∼120% when a 43.48 kPa compressive pressure is applied. The response speed of the photocurrent is 3 and 2 times faster than the cases without applying pressure for the light-on and light-off states, respectively. This work proves that the performance of the photodetector based on MAPbI 3 single crystals can be effectively enhanced by the piezo-phototronic effect, providing a good method for optimizing the performance of future perovskite-based optoelectronic devices.

Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching energy and the further increase of the device density. The negative capacitance effect is proposed to rescue MOSFETs from this phenomenon called "Boltzmann tyranny". Herein, we report In 2 O 3 nanowire (NW) transistors with SS values in the sub-60 mV/dec region, which utilize the ferroelectric P(VDF-TrFE) as the dielectric layer. An ultralow SS down to ∼10 mV/dec is observed and spans over 5 orders of magnitude in the drain current. Meanwhile, a high on/off ratio of more than 10 8 and a transconductance ( g m ) of 2.3 μS are obtained simultaneously at V d = 0.1 V. The results can be understood by the "voltage amplification" effect induced from the negative capacitance effect. Moreover, the steep slope FET-based inverters indicate a high voltage gain of 41.6. In addition to the NOR and NAND gates, the Schmitt trigger inverters containing only one steep slope FET are demonstrated. This work demonstrates an avenue for low-power circuit design with a steep SS.

To meet the growing demands in flexible and wearable electronics, various sensors have been designed for detecting and monitoring the physical quantity changes. However, most of these sensors can only detect one certain kind of physical quantity based on a single mechanism. In this paper, we have fabricated a multifunctional sensor made from carbonized electrospun polyacrylonitrile/barium titanate (PAN-C/BTO) nanofiber film. It can detect two physical quantities (pressure and curvature), independently and simultaneously, by integrating piezoresistive, piezoelectric, and triboelectric effects. For flex sensing with the impedance change of PAN-C/BTO nanofiber films during bending, it had a sensitivity of 1.12 deg -1 from 58.9° to 120.2° and a working range of 28°-150°. For self-powered force sensing, it had a gauge factor of 1.44 V·N -1 within the range of 0.15-25 N. The sensor had a long stability over 60 000 cycles at both sensing modes. The inclusion of barium titanate nanoparticles (BTO NPs) into the nanofiber film had an over 2.4 times enhancement of sensitivity for pressure sensing because of the synergy of piezoelectric and triboelectric effects. On the basis of multifunction and modularity, a series of potential applications of the sensor were demonstrated, including sensing human's swallowing, walking gaits, finger flexure, and finger-tapping. The self-powered flexible dual-mode sensor has great application potential in human-computer interactive and smart wearable sensing systems.

The unification of tunable band edge (BE) emission and strong Mn 2+ doping luminescence in all-inorganic cesium lead halide perovskite nanocrystals (NCs) CsPbX 3 (X = Cl and Br) is of fundamental importance in fine tuning their optical properties. Herein, we demonstrate that benefiting from the differentiation of the cation/anion exchange rate, ZnBr 2 and preformed CsPb 1- x Cl 3 : xMn 2+ NCs can be used to obtain high Br - content Cs(Pb 1- x- z Zn z )(Cl y Br 1- y ) 3 : xMn 2+ perovskite NCs with strong Mn 2+ emission, and the Mn 2+ substitution ratio can reach about 22%. More specifically, the fast anion exchange could be realized by the soluble halide precursors, leading to anion exchange within a few seconds as observed from the strong BE emission evolution, whereas the cation exchange instead generally required at least a few hours; moreover, their exchange mechanism and dynamics process have been evaluated. The Mn 2+ emission intensity could be further varied by controlling the replacement of Mn 2+ by Zn 2+ with prolonged ion exchange reaction time. White light emission of the doped perovskite NCs via this cation/anion synergistic exchange strategy has been realized, which was also successfully demonstrated in a prototype white light-emitting diode (LED) device based on a commercially available 365 nm LED chip.

Modulating lasing wavelength flexibly and repeatedly on a single rod is essential to the practical applications of micro/nanorod lasers. In this paper, a structure that decouples the gain medium and optical cavity is proposed, where the corresponding mechanism for the lasing wavelength shift is explained. Based on the above structure, one kind of wavelength continuously variable lasers is achieved on a single GaN/InGaN core-shell microrod without modifying the geometry of the resonant cavity or cutting the microrod. By using this method, lasing wavelength can be modulated from 372 to 408 nm flexibly and repeatedly in a 10 μm facilely synthesized microrod. This approach demonstrates a big application potential in numerous fields consisting of optical telecommunication and environmental monitoring.

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 10 3 , multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

By combining contact-mode atomic force microscopy (AFM) and scanning Kevin probe microscopy (SKPM), we demonstrated an in situ method for quantitative characterization of the triboelectrification process at the nanoscale. We systematically characterized the triboelectric charge distribution, multifriction effect on charge transfer, as well as subsequent charge diffusion on the dielectric surface: (i) the SiO2 surface can be either positively or negatively charged through triboelectric process using Si-based AFM probes with and without Pt coating, respectively; (ii) the triboelectric charges accumulated from multifriction and eventually reached to saturated concentrations of (-150 ± 8) μC/m(2) and (105 ± 6) μC/m(2), respectively; (iii) the charge diffusion coefficients on SiO2 surface were measured to be (1.10 ± 0.03) × 10(-15) m(2)/s for the positive charge and (0.19 ± 0.01) × 10(-15) m(2)/s for the negative charges. These quantifications will facilitate a fundamental understanding about the triboelectric and de-electrification process, which is important for designing high performance triboelectric nanogenerators. In addition, we demonstrated a technique for nanopatterning of surface charges without assistance of external electric field, which has a promising potential application for directed self-assembly of charged nanostructures for nanoelectronic devices.

We demonstrated the first piezoelectric effect on the performance of a pH sensor using an MSM back-to-back Schottky contacted ZnO micro/nanowire device. When the device is subjected to an external strain, a piezopotential is created in the micro/nanowire, which tunes the effective heights of the Schottky barriers at the local contacts, consequently increasing the sensitivity and signal level of the sensors. Furthermore, the strain-produced piezopotential along the ZnO micro/nanowire will lead to a nonuniform distribution of the target molecules near the micro/nanowire surface owing to electrostatic interaction, which will make the sensor proactive to detect the target molecules even at extremely low overall concentration, which naturally improves the sensitivity and lowers the detection limit. A theoretical model is proposed to explain the observed performance of the sensor using the energy band diagram. This prototype device offers a new concept for designing supersensitive and fast-response micro/nanowire sensors by introducing an external strain and piezotronic effect, which may have great applications in building sensors with fast response and reset time, high selectivity, high sensitivity, and good signal-to-noise ratio for chemical, biochemical, and gas sensing.

This article describes a simple, cost-effective, and scalable approach to fabricate a triboelectric nanogenerator (NG) with ultrahigh electric output. Triggered by commonly available ambient mechanical energy such as human footfalls, a NG with size smaller than a human palm can generate maximum short-circuit current of 2 mA, delivering instantaneous power output of 1.2 W to external load. The power output corresponds to an area power density of 313 W/m(2) and a volume power density of 54,268 W/m(3) at an open-circuit voltage of ~1200 V. An energy conversion efficiency of 14.9% has been achieved. The power was capable of instantaneously lighting up as many as 600 multicolor commercial LED bulbs. The record high power output for the NG is attributed to optimized structure, proper materials selection and nanoscale surface modification. This work demonstrated the practicability of using NG to harvest large-scale mechanical energy, such as footsteps, rolling wheels, wind power, and ocean waves.

ZnO nanowire inorganic/organic hybrid ultraviolet (UV) light-emitting diodes (LEDs) have attracted considerable attention as they not only combine the high flexibility of polymers with the structural and chemical stability of inorganic nanostructures but also have a higher light extraction efficiency than thin film structures. However, up to date, the external quantum efficiency of UV LED based on ZnO nanostructures has been limited by a lack of efficient methods to achieve a balance between electron contributed current and hole contributed current that reduces the nonradiative recombination at interface. Here we demonstrate that the piezo-phototronic effect can largely enhance the efficiency of a hybridized inorganic/organic LED made of a ZnO nanowire/p-polymer structure, by trimming the electron current to match the hole current and increasing the localized hole density near the interface through a carrier channel created by piezoelectric polarization charges on the ZnO side. The external efficiency of the hybrid LED was enhanced by at least a factor of 2 after applying a proper strain, reaching 5.92%. This study offers a new concept for increasing organic LED efficiency and has a great potential for a wide variety of high-performance flexible optoelectronic devices.

We demonstrated the energy harvesting potential and piezotronic effect in vertically aligned CdSe nanowire (NW) arrays for the first time. The CdSe NW arrays were grown on a mica substrate by the vapor-liquid-solid process using a CdSe thin film as seed layer and platinum as catalyst. High-resolution transmission electron microscopy image and selected area electron diffraction pattern indicate that the CdSe NWs have a wurtzite structure and growth direction along (0001). Using conductive atomic force microscopy (AFM), an average output voltage of 30.7 mV and maximum of 137 mV were obtained. To investigate the effect of strain on electron transport, the current-voltage characteristics of the NWs were studied by positioning an AFM tip on top of an individual NW. By applying normal force/stress on the NW, the Schottky barrier between the Pt and CdSe was found to be elevated due to the piezotronic effect. With the change of strain of 0.12%, a current decreased from 84 to 17 pA at 2 V bias. This paper shows that the vertical CdSe NW array is a potential candidate for future piezo-phototronic devices.

Because of their special application in photovoltaics, the growth of one-dimensional single-crystalline TiO(2) nanostructures on a flexible substrate is receiving intensive attention. Here we present a study of rectangular bunched TiO(2) nanorod (NR) arrays grown on carbon fibers (CFs) from titanium by a "dissolve and grow" method. After a corrosion process in a strong acid solution, every single nanorod is etched into a number of small nanowires. Tube-shaped dye-sensitized solar cells are fabricated by using etched TiO(2) NRs-coated CFs as the photoanode. An absolute energy conversion efficiency of 1.28% has been demonstrated under 100 mW cm(-2) AM 1.5 illumination. This work demonstrates an innovative method for growing bunched TiO(2) NRs on flexible substrates that can be applied in flexible devices for energy harvesting and storage., (© 2012 American Chemical Society)

We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion., (© 2011 American Chemical Society)