Search

Composite memristors based on anodic oxidation of Hf superimposed on Ta thin films are studied. A layered structure is obtained by successive sputtering of Ta and Hf thin films. The deposition geometry ensured components' thickness gradient profiles (wedges) aligned in opposite directions. Anodization in citrate buffer electrolyte leads to a nanoscale columnar structuring of Ta 2 O 5 in HfO 2 due to the higher electrical resistance of the latter. Following the less resistive path, the ionic current forces Ta oxide to locally grow toward the electrolyte interface according to the Rayleigh-Taylor principle. The obtained composite oxide memristive properties are studied as a function of the Hf/Ta thickness ratio. One pronounced zone prominent for memristive applications is found for ratios between 4 and 5. Here, unipolar and bipolar memristors are found, with remarkable endurance and retention capabilities. This is discussed in the frame of conductive filament formation preferentially along the interfaces between oxides.

Wide range binary and ternary thin film combinatorial libraries mixing Al, Cu, and Ga were screened for identifying alloys with enhanced ability to withstand electromigration. Bidimensional test wires were obtained by lithographically patterning the substrates before simultaneous vacuum co-deposition from independent sources. Current-voltage measurement automation allowed for high throughput experimentation, revealing the maximum current density and voltage at the electrical failure threshold for each alloy. The grain boundary dynamic during electromigration is attributed to the resultant between the force corresponding to the electron flux density and the one corresponding to the atomic concentration gradient perpendicular to the current flow direction. The screening identifies Al-8 at. % Ga and Cu-5 at. % Ga for replacing pure Al or Cu connecting lines in high current/power electronics. Both alloys were deposited on polyethylene naphthalate (PEN) flexible substrates. The film adhesion to PEN is enhanced by alloying Al or Cu with Ga. Electrical testing demonstrated that Al-8 at. % Ga is more suitable for conducting lines in flexible electronics, showing an almost 50% increase in electromigration suppression when compared to pure Al. Moreover, Cu-5 at. % Ga showed superior properties as compared to pure Cu on both SiO 2 and PEN substrates, where more than 100% increase in maximum current density was identified.

The electrochemical behavior of a tungsten trioxide-nickel oxide (WO 3 -NiO) thin film library was investigated using scanning droplet cell microscopy (SDCM) in 0.1 mol dm -3 sodium perchlorate (NaClO 4 ) solution. The WO 3 -Ni film library was deposited by thermal coevaporation on an indium tin oxide (ITO)-coated glass substrate in an atomic Ni concentration range from 2.8 to 15.6 at. %. After an oxidation/crystallization heat treatment, the Ni was oxidized and the crystal structure of WO 3 -NiO was transformed from monoclinic WO 3 (3.5 at. % Ni) to cubic WO 3 (up to 7.1 at. % Ni) and again to monoclinic WO 3 when the Ni amount increased (>11.8 at. %). Proton (H + ) intercalation (cathodic reaction) and deintercalation (anodic reaction) into the WO 3 -NiO mixed phases was induced. Electrochemical impedance spectroscopy (EIS) and Mott-Schottky (M-S) analysis revealed that the WO 3 -NiO film has n-type bilayer capacitive property, with the outer capacitive layer having a higher defect density than the inner capacitive layer. With a Ni concentration of 7.1 at. %, the WO 3 -NiO film was the most defective in the library. Introduction of the Ni cation into the WO 3 network was associated with changes of the semiconducting properties of the film.

Optical bandgap mapping of Nb-Ti mixed oxides anodically grown on a thin film parent metallic combinatorial library was performed via variable angle spectroscopic ellipsometry (VASE). A wide Nb-Ti compositional spread ranging from Nb-90 at.% Ti to Nb-15 at.% Ti deposited by cosputtering was used for this purpose. The Nb-Ti library was stepwise anodized at potentials up to 10 V SHE, and the anodic oxides optical properties were mapped along the Nb-Ti library with 2 at.% resolution. The surface dissimilarities along the Nb-Ti compositional gradient were minimized by tuning the deposition parameters, thus allowing a description of the mixed Nb-Ti oxides based on a single Tauc-Lorentz oscillator for data fitting. Mapping of the Nb-Ti oxides optical bandgap along the entire compositional spread showed a clear deviation from the linear model based on mixing individual Nb and Ti electronegativities proportional to their atomic fractions. This is attributed to the strong amorphization and an in-depth compositional gradient of the mixed oxides. A systematic optical bandgap decrease toward values as low as 2.0 eV was identified at approximately 50 at.% Nb. Mixing of Nb 2 O 5 and TiO 2 with both amorphous and crystalline phases is concluded, whereas the possibility of complex Nb a Ti b O y oxide formation during anodization is unlikely.

A combinatorial thin film material library from the molybdenum-tungsten refractory metals oxides system was prepared by thermal coevaporation, and its structural and morphological properties were investigated after a multiple step heat treatment. A mixture of crystalline and amorphous oxides and suboxides was obtained, as well as surface structuring caused by the enrichment of molybdenum oxides in large grains. It was found that the oxide phases and the surface morphology change as a function of the compositional gradient. Tests of the library antimicrobial activity against E. coli were performed and the antimicrobial activity was proven in some defined compositional ranges. A mechanism for explaining the observed activity is proposed, involving a collective contribution from (i) increased local acidity due to the enrichment in large grains of molybdenum oxides with different stoichiometry and (ii) the release of free radicals from the W18O49 phase under visible light.