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Significant interest in the electrocatalytic reduction of molecular nitrogen to ammonia (the nitrogen reduction reaction: NRR) has focused attention on transition metal carbides as possible electrocatalysts. However, a fundamental understanding of carbide surface structure/NRR reactivity relationships is sparse. Herein, electrochemistry, DFT-based calculations, and in situ photoemission studies demonstrate that NbC, deposited by magnetron sputter deposition, is active for NRR at pH 3.2 but only after immersion of an ambient-induced Nb 2 O 5 surface layer in 0.3 M NaOH, which leaves Nb suboxides with niobium in intermediate formal oxidation states. Photoemission data, however, show that polarization to -1.3 V vs Ag/AgCl restores the Nb 2 O 5 overlayer, correlating with electrochemical measurements showing inhibition of NRR activity under these conditions. In contrast, a similar treatment of a sputter-deposited TaC sample in 0.3 M NaOH fails to reduce the ambient-induced Ta 2 O 5 surface layer, and TaC is inactive for NRR at potentials more positive than -1.0 V even though a significant cathodic current is observed. A TaC sample with surface oxide partially reduced by Ar ion sputtering in UHV prior to in situ transfer to UHV exhibits a restored Ta 2 O 5 surface layer after electrochemical polarization to -1.0 V vs Ag/AgCl. The electrochemical and photoemission results are in accord with DFT-based calculations indicating greater N≡N bond activation for N 2 bound end-on to Nb(IV) and Nb(III) sites than for N 2 bound end-on to Nb(V) sites. Thus, theory and experiment demonstrate that with respect to NbC, the formation and stabilization of intermediate (non-d 0 ) oxidation states for surface transition metal ions is critical for N≡N bond activation and NRR activity. Additionally, the Nb suboxide surface, formed by immersion in 0.3 M NaOH of ambient-exposed NbC, is shown to undergo reoxidation to catalytically inactive Nb 2 O 5 at -1.3 V vs Ag/AgCl, possibly due to hydrolysis or other, as yet not understood, phenomena.

Vanadium oxynitride and other earth-abundant oxynitrides are of growing interest for the electrocatalytic reduction of nitrogen to NH 3 . A major unresolved issue, however, concerns the roles of lattice N and lattice O in this process. Electrochemistry and photoemission data reported here demonstrate that both lattice N and dissolved N 2 are reduced to NH 3 by cathodic polarization of vanadium oxynitride films at pH 7. These data also show that ammonia production from lattice N occurs in the presence or absence of N 2 and involves the formation of V≡N: intermediates or similar unsaturated VN surface states on a thin vanadium oxide overlayer. In contrast, N 2 reduction proceeds in the presence or absence of lattice N and without N incorporation into a vanadium oxide lattice. Thus, both lattice N and N 2 reduction mechanisms involve oxide-supported V surface sites ([V] O ) in preference to N-supported sites ([V] N ). This result is supported by density functional theory-based calculations showing that the formation of V≡N:, V-N═N-H, and a few other plausible reaction intermediates is consistently energetically favored at [V] O rather than at [V] N surface sites. Similar effects are predicted for the oxynitrides of other oxophilic metals, such as Ti.

Heterostructures consisting of 10 Å thick chromia films and 50 Å thick titania films display significant exchange bias at and above room temperature. Chromia films ∼10 Å thick were deposited by molecular beam epitaxy (MBE) of Cr at room temperature in ultrahigh vacuum on 50 Å thick TiO 2- x (111) films ( x < 0.3) also deposited epitaxially by MBE on Al 2 O 3 (0001). Cr deposition yields increased Ti(III) formation in the titania substrate and the formation of a Cr 2 O 3 overlayer, without Cr/Ti interfacial mixing, as determined by in situ photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS). In situ low-energy electron diffraction (LEED) and XPS data indicate that the chromia overlayer is hexagonally ordered and ∼10 Å thick. Longitudinal and polar magneto-optic Kerr effect (MOKE) measurements at 285-315 K provide evidence of strong exchange bias between the boundary layer magnetization of chromia and the ferromagnetic substrate. These data demonstrate the robust room-temperature interaction of the boundary layer magnetization of a multiferroic antiferromagnet with a d 0 ferromagnetic substrate.

Boron carbide films, alloyed with aniline moieties, were deposited by plasma enhanced chemical vapor deposition (PECVD) from aniline and orthocarborane precursors and were found to exhibit composition-dependent drift carrier lifetimes as derived from I( V) and C( V)) measurements. For a film with an aniline/carborane ratio of 5:1, the effective drift carrier lifetimes are ∼80 μs at low bias voltage but quickly drop to a few microseconds with increasing bias. A film with a 10:1 aniline/carborane ratio, however, exhibited lifetimes of ∼6 μs, or less, at 1 kHz, and much smaller values at 10 kHz. These lifetimes are orders of magnitude longer than those in polyaniline films and comparable to those in PECVD carborane films without aromatic content. X-ray photoelectron spectroscopy (XPS), FTIR, and ellipsometry, combined with density functional theory (DFT)-based cluster calculations, indicate that aniline and orthocarborane moieties are largely intact within the films. Bonding occurs primarily between aniline C sites and carborane B sites, and the aniline coordination number per carborane icosahedron is ∼2 as the aniline/carborane ratio is increased from 3:1 to 10:1. This aniline/carborane coordination ratio independent of aniline/orthocarborane stoichiometry is consistent with the dependence of charge transport properties on aniline film content at high bias voltage.

We report directly grown strongly adherent graphene on Co 3 O 4 (111) by carbon molecular beam epitaxy (C MBE) at 850 K and density functional theory (DFT) findings that the first graphene layer is reconstructed to fit the Co 3 O 4 surface, while subsequent layers retain normal graphene structure. This adherence to the Co 3 O 4 structure results from partial bonding of half the carbons to top oxygens of the substrate. This structure is validated by X-ray photoelectron spectroscopy and low-energy electron diffraction studies, showing layer-by-layer graphene growth with ∼0.08 electrons/carbon atom transferred to the oxide from the first graphene layer, in agreement with DFT. In contrast, for Cr 2 O 3 DFT finds no strong bonding to the surface and C MBE on Cr 2 O 3 (0001) yields only graphite formation at 700 K, with C desorption above 800 K. Thus strong graphene-to-oxide charge transfer aids nucleation of graphene on incommensurate oxide substrates and may have implications for spintronics.

The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications.

The dehydrogenation of semiconducting boron carbide (B(10)C(2)H(x)) films as well as the three closo-carborane isomers of dicarbadodecaborane (C(2)B(10)H(12)) and two isomers of the corresponding closo-phosphacarborane (PCB(10)H(11)) all appear to be very similar. Photoionization mass spectrometry studies at near-threshold gas phase photoionization indicate that the preferred pathway for dissociation of the parent cation species (C(2)B(10)H(10)(+) or PCB(10)H(9)(+)) is, in all cases, the loss of H(2). Ab initio density functional theory (DFT) calculations indicate that energetically preferred sites for exopolyhedral hydrogen (B-H) bond dissociation are in all cases at B atoms opposite the C atoms in the parent cage molecule. The site of photodissociation of hydrogen from semiconducting boron carbide (B(10)C(2)H(x)) films, fabricated by plasma-enhanced chemical vapor deposition, is a cage boron atom that can bond to nitrogen upon exposure to VUV light in the presence of NH(3). Shifts in core level binding energies due to nitrogen bond formation indicate that B-N bond formation occurs only at B atoms bound to other boron atoms (B-B sites) and not at B-C sites or at C sites, in agreement with gas phase results.