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Fulvic acids (FAs) have been commercially used in cosmetics and agronomy due to their unique biological activities, such as plant stimulation and anti-inflammatory effects. However, the extraction sources of FAs, such as peat, are currently limited. Consequently, new extraction methods using renewable resources need to be developed, while reproducing the biological functions. Here, ionic liquids (ILs) effectively extracted fulvic-like substances (FLSs) from wood sawdust. The overall molecular weight distributions of FLSs were similar to those of commercial FAs, and key organic groups (e.g., aromatic, phenolic, and methoxy groups) were also found to be shared between commercial FAs and FLSs. Detailed compositional analysis revealed by high-resolution mass spectrometry showed that the extracts contain both lignin-like and lipid-like molecules, while commercial FAs are biased toward lignin-like and carbohydrate-like molecules. FLSs generally showed better and similar performance in radical scavenging activity against ABTS +· and H 2 O 2 . Fibroblast proliferation and lettuce growth enhancements were also observed with the extract containing 1-ethyl-3-methylimidazolium acetate and triethylammonium hydrogen sulfate, respectively, which performed better than commercial FAs. Immunofluorescence staining of in vitro human follicle dermal papilla cells supports that coexpression of hair growth-related proteins can be accelerated with FLSs, and this effect was further evidenced by in vivo mouse model experiments. Finally, the reusability of ILs in the extraction process was confirmed by analyzing the structural features of FLSs from each recycling. Our findings indicate that ILs are useful for obtaining biologically functional fulvic analogs from renewable plant sources.

Quantum dots (QDs) exhibit size-tunable optical properties, making them suitable for efficient light-sensing and light-emitting devices. Tandem devices that can convert near-infrared (NIR) to visible (Vis) signals can be fabricated by integrating an NIR-sensing QD device with a Vis electroluminescence (EL) QD device. However, these devices require delicate control of the QD layer during processing to prevent damage to the predeposited QD layers in tandem devices during the subsequent deposition of other functional layers. This has restricted attainable device structures for QD-based upconversion devices. Herein, we present a modular approach for fabricating QD-based optoelectric upconversion devices. This approach involves using NIR QD-absorbing (Abs) and Vis QD-EL units as building modules, both of which feature cross-linked functional layers that exhibit structural tolerance to dissolution during subsequent solution-based processes. Tandem devices are fabricated in both normal (EL unit on Abs unit) and inverted (Abs unit on EL unit) structures using the same set of NIR QD-Abs and Vis QD-EL units stacked in opposite sequences. The tandem device in the normal structure exhibits a high NIR photon-to-Vis-photon conversion efficiency of up to 1.9% in a practical transmissive mode. By extending our modular approach, we also demonstrate a three-stack tandem device that incorporates a single NIR-absorbing unit coupled with two EL units, achieving an even higher conversion efficiency of up to 3.2%.

Recently, C 60 has emerged as a promising anode material for Li-ion batteries, attracting significant interest due to its excellent lithium storage capacity. The electrochemical performance of C 60 as an anode is largely dependent on its internal crystal structure, which is significantly influenced by the synthesis method and corresponding conditions. However, there have been few reports on how the synthesis process affects the crystal structure and Li + storage capacity of C 60 . This study used the liquid-liquid interface precipitation method and a low-temperature annealing process to fabricate one-dimensional C 60 nanorods (NRs). We thoroughly investigated synthesis conditions, including the growth time, drying temperature, annealing time, and annealing atmosphere. The results demonstrate that these synthesis conditions directly impact the morphology, phase transition, and electrochemical efficiency of pure C 60 NRs. Remarkably, the hexagonal close-packed structural C 60 NRs-6012h, in a metastable form, exhibits a reversible Li + storage capacity as an anode material in Li-ion batteries. Furthermore, the face-centered cubic C 60 NRs-603001h electrode shows significantly enhanced rate performance and long-cycle stability. A discharge-specific capacity of 603 mAh g -1 was maintained after 2000 cycles at a current density of 2 A g -1 . This study elucidates the effect of synthesis conditions on C 60 crystals, offering an effective strategy for preparing high-performance C 60 anode materials.

Micro-/nanotopographical cues have emerged as a practical and promising strategy for controlling cell fate and reprogramming, which play a key role as biophysical regulators in diverse cellular processes and behaviors. Extracellular biophysical factors can trigger intracellular physiological signaling via mechanotransduction and promote cellular responses such as cell adhesion, migration, proliferation, gene/protein expression, and differentiation. Here, we engineered a highly ordered nanowrinkled graphene oxide (GO) surface via the mechanical deformation of an ultrathin GO film on an elastomeric substrate to observe specific cellular responses based on surface-mediated topographical cues. The ultrathin GO film on the uniaxially prestrained elastomeric substrate through self-assembly and subsequent compressive force produced GO nanowrinkles with periodic amplitude. To examine the acute cellular behaviors on the GO-based cell interface with nanostructured arrays of wrinkles, we cultured L929 fibroblasts and HT22 hippocampal neuronal cells. As a result, our developed cell-culture substrate obviously provided a directional guidance effect. In addition, based on the observed results, we adapted a deep learning (DL)-based data processing technique to precisely interpret the cell behaviors on the nanowrinkled GO surfaces. According to the learning/transfer learning protocol of the DL network, we detected cell boundaries, elongation, and orientation and quantitatively evaluated cell velocity, traveling distance, displacement, and orientation. The presented experimental results have intriguing implications such that the nanotopographical microenvironment could engineer the living cells' morphological polarization to assemble them into useful tissue chips consisting of multiple cell types.

Neural interfaces play a major role in modulating neural signals for therapeutic purposes. To meet the demand of conformable neural interfaces for developing bioelectronic medicine, recent studies have focused on the performance of electrical neurostimulators employing soft conductors such as conducting polymers and electronic or ionic conductive hydrogels. However, faradaic charge injection at the interface of the electrode and nerve tissue causes irreversible gas evolution, oxidation of electrodes, and reduction of biological ions, thus causing undesired tissue damage and electrode degradation. Here we report a conformable neural interface engineering based on multicross-linked membrane-ionogel assembly (termed McMiA), which enables nonfaradaic neurostimulation without irreversible charge transfer reaction. The McMiA consists of a genipin-cross-linked biopolymeric ionogel coupled with a dopamine-cross-linked graphene oxide membrane to prevent ion exchange between biological and synthetic McMiA ions and to function as a bioadhesive forming covalent bonds with the target tissues. In addition, the demonstration of bioelectronic medicine via the McMiA-based neurostimulation of sciatic nerves shows the enhanced clinical utility in treating the overactive bladder syndrome. As the McMiA-based neural interface is soft, robust for bioadhesion, and stable in a physiological environment, it can offer significant advancement in biocompatibility and long-term operability for neural interface engineering.

It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe 2 film on high-resistance (HR) semiconducting MoS 2 (>10 MΩ), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LR-PtSe 2 (3 nm)/HR-MoS 2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 μV/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR-2D heterostructure. The proposed stacked LR-PtSe 2 /HR-MoS 2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.

Smart contact lenses have the potential to serve as noninvasive healthcare devices or virtual displays. However, their implementation is limited by the lack of suitable power sources for microelectronic devices. This Article demonstrates smart contact lenses with fully embedded glucose fuel cells that are safe, flexible, and durable against deformations. These fuel cells produced stable power throughout the day or during intermittent use after storage for weeks. When the lenses were exposed to 0.05 mM glucose solution, a steady-state maximum power density of 4.4 μW/cm 2 was achieved by optimizing the chemistry and porous structure of the fuel cell components. Additionally, even after bending the lenses in half 100 times, the fuel cell performance was maintained without any mechanical failure. Lastly, when the fuel cells were connected to electroresponsive hydrogel capacitors, we could clearly distinguish between the tear glucose levels under normal and diabetic conditions through the naked eye.

Melatonin is a neurohormone that modulates several physiological functions in mammals through the activation of melatonin receptor type 1 and 2 (MT 1 and MT 2 ). The melatonergic system is an emerging therapeutic target for new pharmacological interventions in the treatment of sleep and mood disorders; thus, imaging tools to further investigate its role in the brain are highly sought-after. We aimed to develop selective radiotracers for in vivo imaging of both MT 1 and MT 2 by positron emission tomography (PET). We identified four previously reported MT ligands with picomolar affinities to the target based on different scaffolds which were also amenable for radiolabeling with either carbon-11 or fluorine-18. [ 11 C]UCM765, [ 11 C]UCM1014, [ 18 F]3-fluoroagomelatine ([ 18 F]3FAGM), and [ 18 F]fluoroacetamidoagomelatine ([ 18 F]FAAGM) have been synthesized in high radiochemical purity and evaluated in wild-type rats. All four tracers showed moderate to high brain permeability in rats with maximum standardized uptake values (SUV max of 2.53, 1.75, 3.25, and 4.47, respectively) achieved 1-2 min after tracer administration, followed by a rapid washout from the brain. Several melatonin ligands failed to block the binding of any of the PET tracer candidates, while in some cases, homologous blocking surprisingly resulted in increased brain retention. Two 18 F-labeled agomelatine derivatives were brought forward to PET scans in non-human primates and autoradiography on human brain tissues. No specific binding has been detected in blocking studies. To further investigate pharmacokinetic properties of the putative tracers, microsomal stability, plasma protein binding, log D , and membrane bidirectional permeability assays have been conducted. Based on the results, we conclude that the fast first pass metabolism by the enzymes in liver microsomes is the likely reason of the failure of our PET tracer candidates. Nevertheless, we showed that PET imaging can serve as a valuable tool to investigate the brain permeability of new therapeutic compounds targeting the melatonergic system.

The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe 2 /PtSe 2 van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe 2 over high-resistance PtSe 2 thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe 2 films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe 2 /PtSe 2 van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe 2 (10 nm)/PtSe 2 (2 nm) homostructure approximately 42% compared to that of a pure PtSe 2 (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit.

The individual moiety-functionalized organosilane single molecule, that is, 1,1,1,5,5,5-hexamethyl-3-[(trimethylsilyl)oxy]-3-vinyltrisiloxane (TMSV), is investigated as an electrolyte additive for a less charge-consuming and viscoelastic solid electrolyte interphase (SEI) forming agent, finally accomplishing extremely quick (6 min) rechargeable SiO/NCM811 lithium-ion batteries. The moiety of the vinyl group serves with a poly(ethylene oxide)-like viscoelastic SEI film on the SiO electrode, which provides a physicochemically stable interphase during long-term cycling. The increase of DC- iR due to electrolyte decomposition on the continuously exposed SiO surface with cycling is inhibited by the alternated SEI composition. Degradation of bulk electrolyte solution caused by thermal decomposition of the LiPF 6 salt is also suppressed by the trimethylsilyl moiety in the TMSV additive, which scavenges HF. Owing to the multifunctionality of TMSV, the cycle performance of laminated pouch full cells comprising high-nickel-contented NCM811 positive electrode and SiO-enriched negative electrode is significantly improved at both room and elevated temperatures. Furthermore, the 6 min quick recharging cycle performance is also enhanced by the TMSV additive.

A recent study found that magnetization curves for Y 3 Fe 5 O 12 (YIG) slab and thick films (>20 μm thick) differed from bulk system curves by their longitudinal spin Seebeck effect in a Pt/YIG bilayer system. The deviation was due to intrinsic YIG surface magnetic anisotropy, which is difficult to adopt extrinsic surface magnetic anisotropy even when in contact with other materials on the YIG surface. This study experimentally demonstrates evidence for extrinsic YIG surface magnetic anisotropy when in contact with a diamagnetic graphene interlayer by observing the spin Seebeck effect, directly proving intrinsic YIG surface magnetic anisotropy interruption. We show the Pt/YIG bilayer system graphene interlayer role using large area single and multilayered graphenes using the longitudinal spin Seebeck effect at room temperature, and address the presence of surface magnetic anisotropy due to magnetic proximity between graphene and YIG layer. These findings suggest a promising route to understand new physics of spin Seebeck effect in spin transport.

Pt-supported carbon material-based electrocatalysts are formidably suffering from carbon corrosion when H 2 O and O 2 molecules are present at high voltages in polymer electrolyte membrane fuel cells (PEMFCs). In this study, we discovered that the edge site of a fluorine-doped graphene nanoribbon (F-GNR) was slightly adsorbed with H 2 O and was thermodynamically unfavorable with O atoms after defining the thermodynamically stable structure of the F-GNR from DFT calculations. Based on computational predictions, the physicochemical and electrochemical properties of F-GNRs with/without Pt nanoparticles derived from a modified Hummer's method and the polyol process were investigated as support materials for electrocatalysts and additives in the cathode of a PEMFC, respectively. The Pt/F-GNR showed the lowest degradation rate in carbon corrosion and was effective in the cathode as additives, resulting from the enhanced carbon corrosion durability owing to the improved structural stability and water management. Notably, the F-GNR with highly stable carbon corrosion contributed to achieving a more durable PEMFC for long-term operation.

The hole density of individual copper sulfide nanocrystals (Cu 2- x S NCs) is determined from the stoichiometric mismatch ( x ) between copper and sulfide atoms. Consequently, the electronic properties of the material vary over a range of x . To exploit Cu 2- x S NCs in devices, assemblies of NCs are typically required. Herein, we investigate the influence of x , referred to as the stoichiometric doping effect, on the structural, optical, electrical, and thermoelectric properties of electronically coupled Cu 2- x S NC assemblies. The doping process is done by immersing the solid NC assemblies into a solution containing a Cu(I) complex for different durations (0-10 min). As Cu + gradually occupied the copper-deficient sites of Cu 2- x S NCs, x could be controlled from 0.9 to less than 0.1. Consequently, the near-infrared (NIR) absorbance of Cu 2- x S NC assemblies changes systematically with x . With increasing x , electrical conductivity increased and the Seebeck coefficient decreased systematically, leading to the maximal thermoelectric power factor from a film of Cu 2- x S NCs at an optimal doping condition yielding x = 0.1. The physical characteristics of the Cu 2- x S NC assemblies investigated herein will provide guidelines for exploiting this emerging class of nanocrystal system based on doping.

Three-dimensional (3D) bioprinting has attracted considerable attention for producing 3D engineered cellular microenvironments that replicate complex and sophisticated native extracellular matrices (ECM) as well as the spatiotemporal gradients of numerous physicochemical and biological cues. Although various hydrogel-based bioinks have been reported, the development of advanced bioink materials that can reproduce the complexity of ECM accurately and mimic the intrinsic property of laden cells is still a challenge. This paper reports 3D printable bioinks composed of phenol-rich gelatin (GHPA) and graphene oxide (GO) as a component for a myogenesis-inducing material, which can form a hydrogel network in situ by a dual enzyme-mediated cross-linking reaction. The in situ curable GO/GHPA hydrogel can be utilized successfully as 3D-printable bioinks to provide suitable cellular microenvironments with facilitated myogenic differentiation of C2C12 skeletal myoblasts. Overall, we suggest that functional bioinks may be useful in muscle tissue engineering and regenerative medicine.

The spin Seebeck effect (SSE) has attracted renewed interest as a promising phenomenon for energy harvesting systems. A noteworthy effort has been devoted to improving the SSE voltage by inserting ultrathin magnetic layers including Fe 70 Cu 30 interlayers in Pt/Y 3 Fe 5 O 12 (Pt/YIG) systems with increased spin-mixing conductance at the interfaces. Nevertheless, the responsible underlying physics associated with the role of the interlayer in Pt/YIG systems in the SSE is still unknown. In this paper, we demonstrate that with a monolayer tungsten diselenide (ML WSe 2 ) interlayer in the Pt/YIG bilayer system, the longitudinal SSE (LSSE) voltage is significantly increased by the increased spin accumulation in the Pt layer; the spin fluctuation in ML WSe 2 amplifies the spin current transmission because the in-plane-aligned WSe 2 spins are coupled to thermally pumped spins under nonequilibrium magnetization conditions in the LSSE configuration at room temperature. The thermopower ( V LSSE /ΔT) improves by 323% with respect to the value of the reference Pt/YIG bilayer sample in the LSSE at room temperature. In addition, the induced ferromagnetic properties of the ML WSe 2 flakes on YIG increase the LSSE voltage ( V LSSE ) of the sample; the ferromagnetic properties are a result of the improved magnetic moment density in the ML WSe 2 flakes and their two-dimensional (2D) ML nature in the LSSE under nonequilibrium magnetization conditions. The results can extend the application range of the materials in energy harvesting and provide important information on the physics of the LSSE with a transition metal dichalcogenide intermediate layer in spin transport.

Exploiting the long-range polarizability of an electrolyte based on ion migration, electric double-layer transistors (EDLTs) can be constructed in an unconventional configuration; here, the gate electrode is placed coplanarly with the device channel. In this paper, we demonstrate the influence of the distance factors of the electrolyte layer on the operation of EDLTs with a coplanar gate. As the promptness of the electric double-layer formation depends on the distance between the channel and the gate, the dynamic characteristics of a remote-gated transistor degrade with long distances. To suppress this degradation, we suggest using multiple coplanar floating gates bridged through ionic dielectric layers. Unlike remotely gated EDLTs that utilize a single extended electrolyte layer, the devices with multiple segmented electrolyte layers operate effectively even when they are gated from a distance longer than 1 mm.

Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer. The interfacial oxidation between the gate metal and In-Ga-Zn oxide (IGZO) was investigated with Al, Ti, and Mo. Positive bias was applied to the gate metal for enhanced oxygen diffusion since the migration of oxygen is an important factor in interfacial oxidation. Through interfacial oxidation, a top-gate oxide TFT was developed with low source-drain voltages below 0.5 V and a gate voltage swing less than 1 V, which provide low power consumption., Competing Interests: The authors declare no competing financial interest., (© 2021 The Authors. Published by American Chemical Society.)

We first observed the spin-to-charge conversion due to both the inverse Rashba-Edelstein effect (IREE) and inverse spin-Hall effect in a holey multilayer molybdenum disulfide (MoS 2 ) intermediate layer in a Pt/YIG structure via LSSE measurements under nonequilibrium magnetization. We found an enhancement of approximately 238%, 307%, and 290% in the longitudinal spin Seebeck effect (LSSE) voltage, spin-to-charge current, and thermoelectric (TE) power factor, respectively, compared with the monolayer MoS 2 interlayer in a Pt/YIG structure. Such an enhancement in the LSSE performance of Pt/holey MoS 2 /YIG can be explained by the improvement of spin accumulation in the Pt layer by induced spin fluctuation as well as increased additional spin-to-charge conversion due to in-plane IREE. Our findings represent a significant achievement in the understanding of spin transport in atomically thin MoS 2 interlayers and pave the way toward large-area TE energy-harvesting devices in two-dimensional transition metal dichalcogenide materials.

The limitation on signal processes implementable using conventional semiconductor circuits based on electric signals necessitates a revolutionary change in device structures such that they can exploit photons or light. Herein, we introduce optoelectric logic circuits that convert optical signals with different wavelengths corresponding to different colors into binary electric signals. Such circuits are assembled using unit devices in which the electric current through the semiconductor channel is effectively gated by lights of different colors. Color-selective optical modulation of the device is cleverly achieved using graphene decorated with different organic dyes as the electrode of a Schottky diode structure. The drastic change in the electrode work function under illumination induces a change in the height of the Schottky barrier formed at the electrode/semiconductor junction and consequent modulation of the electric current; we term the developed device a photonic barristor. We construct logic circuits using an array of photonic barristors and demonstrate that they execute the functions of conventional NAND and NOR gates from optical input signals.

The voltage induced by the inverse spin Hall effect (ISHE) is affected by several factors, including the spin Hall angle of the normal metal (NM), the quality and magnetic properties of the ferromagnetic material (FM), and the interface conditions between the NM and FM bilayers in longitudinal spin Seebeck effect (LSSE) measurement. Specifically, the interface conditions in NM/FM systems via LSSE devices play a crucial role in determining the efficiency of spin current injection into the NM layer. In this letter, we report a new approach to controlling the efficiency of spin current injection into a Pt layer across a Pt/Y 3 Fe 5 O 12 (YIG) interface by surface coverage of the intermediate layer. A continuous, large-area multilayer molybdenum dichalcogenide (MoS 2 ) thin film grown by chemical vapor deposition is inserted between the Pt and YIG layers in the LSSE configuration. We found that, when the large-area multilayer MoS 2 film was present, the measured ISHE-induced voltage and theoretically calculated spin current in the Pt/MoS 2 /YIG trilayer increased by ∼510% and 470%, respectively, compared to those of a Pt/YIG bilayer. The induced voltage and spin current were very sensitive to the surface conductance, which was affected by the surface coverage of the multilayer MoS 2 films in the LSSE measurement. Furthermore, the theoretically calculated spin current and spin mixing conductance in the trilayer geometry are in qualitatively good agreement with the experimental observations. These measurements enable us to explain the effect of the interface conditions on the spin Seebeck effect in spin transport.

Tactile pressure sensors as flexible bioelectronic devices have been regarded as the key component for recently emerging applications in electronic skins, health-monitoring devices, or human-machine interfaces. However, their narrow range of sensible pressure and their difficulty in forming high integrations represent major limitations for various potential applications. Herein, we report fully integrated, active-matrix arrays of pressure-sensitive MoS 2 transistors with mechanoluminescent layers and air dielectrics for wide detectable range from footsteps to cellular motions. The inclusion of mechanoluminescent materials as well as air spaces can increase the sensitivity significantly over entire pressure regimes. In addition, the high integration capability of these active-matrix sensory circuitries can enhance their spatial resolution to the level sufficient to analyze the pressure distribution in a single cardiomyocyte. We envision that these wide-range pressure sensors will provide a new strategy toward next-generation electronics at biomachine interfaces to monitor various mechanical and biological phenomena at single-cell resolution.

This paper demonstrates, for the first time, wafer-scale graphene/MoS 2 heterostructures prepared by chemical vapor deposition (CVD) and their application in vertical transistors and logic gates. A CVD-grown bulk MoS 2 layer is utilized as the vertical channel, whereas CVD-grown monolayer graphene is used as the tunable work-function electrode. The short vertical channel of the transistor is formed by sandwiching bulk MoS 2 between the bottom indium tin oxide (ITO, drain electrode) and the top graphene (source electrode). The electron injection barriers at the graphene-MoS 2 junction and ITO-MoS 2 junction are modulated effectively through variation of the Schottky barrier height and its effective barrier width, respectively, because of the work-function tunability of the graphene electrode. The resulting vertical transistor with the CVD-grown MoS 2 /graphene heterostructure exhibits a current density exceeding 7 A/cm 2 , a subthreshold swing of 410 mV/dec, and an on-off current ratio exceeding 10 3 . The large-area synthesis, transfer, and patterning processes of both semiconducting MoS 2 and metallic graphene facilitate construction of a wafer-scale array of transistors and logic gates such as NOT, NAND, and NOR.

This paper introduces a strategy to modulate a Schottky barrier formed at a graphene-semiconductor heterojunction. The modulation is performed by controlling the work function of graphene from a gate that is placed laterally away from the graphene-semiconductor junction, which we refer to as the remote gating of a Schottky barrier. The remote gating relies on the sensitive work function of graphene, whose local variation induced by locally applied field effect affects the change in the work function of the entire material. Using Kelvin probe force microscopy analysis, we directly visualize how this local variation in the work function propagates through graphene. These properties of graphene are exploited to assemble remote-gated vertical Schottky barrier transistors (v-SBTs) in an unconventional device architecture. Furthermore, a vertical complementary circuit is fabricated by simply stacking two remote-gated v-SBTs (pentacene layer as the p-channel and indium gallium zinc oxide layer as the n-channel) vertically. We consider that the remote gating of graphene and the associated device architecture presented herein facilitate the extendibility of graphene-based v-SBTs in the vertical assembly of logic circuits.

In this study, we fabricated an array of all-inkjet-printed vertical Schottky barrier (SB) transistors and various logic gates on a large-area substrate. All of the electronic components, including the indium-gallium-zinc-oxide (IGZO) semiconductor, reduced graphene oxide (rGO), and indium-tin-oxide (ITO) electrodes, and the ion-gel gate dielectric, were directly and uniformly printed onto a 4 in. wafer. The vertical SB transistors had a vertically stacked structure, with the inkjet-printed IGZO semiconductor layer placed between the rGO source electrode and the ITO drain electrode. The ion-gel gate dielectric was also inkjet-printed in a coplanar gate geometry. The channel current was controlled by adjusting the SB height at the rGO/IGZO heterojunction under application of an external gate voltage. The high intrinsic capacitance of the ion-gel gate dielectric facilitated modulation of the SB height at the source/channel heterojunction to around 0.5 eV at a gate voltage lower than 2 V. The resulting vertical SB transistors exhibited a high current density of 2.0 A·cm -2 , a high on-off current ratio of 10 6 , and excellent operational and environmental stabilities. The simple device structure of the vertical SB transistors was beneficial for the fabrication of all-inkjet-printed low-power logic circuits such as the NOT, NAND, and NOR gates on a large-area substrate.

We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS 2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS 2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS 2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS 2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS 2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm 2 /V s, an on-off ratio of 10 5 , and a turn-on voltage of -0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS 2 and indium-gallium-zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS 2 transistors is demonstrated. Finally, the monolithic MoS 2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics.

Polyimide is one of the most important high-performance polymers, which is widely used due to its excellent mechanical performance and thermal stability. Unlike the conventional synthetic approach, hydrothermal polymerization enables the synthesis of polyimides without any toxic solvent and catalyst. Herein, we report the synthesis of polyimide-based microparticles (PIMs) through one-pot hydrothermal polymerization using precursors of mellitic acid (MA) and three isomers of phenylenediamine (PDA) ( o -, m -, and p -PDA). Interestingly, the chemical composition of PIMs was highly tunable with the choice of the PDA isomers, leading to considerable morphological differences between PIMs. The molecular dynamics simulation and density functional theory calculation of the polymeric segment of the respective PIMs suggested that the relative ratio of amide to imide influenced the rotational freedom of the polymeric chains and number of hydrogen bonds, resulting in the well-defined structures of respective PIMs. Considering the highly tunable nature of PIMs coupled with the facile synthetic protocol, we anticipate prospective potentials of PIMs in materials, energy, and composite applications.

Electrochemiluminescence (ECL) involves light emission accompanied by a series of electrochemical processes on luminophores, which has been recently exploited in a new light-emitting device platform, referred to as the ECL device (ECLD). Here, we investigate the influence of the transport of the ECL luminophores and their reaction kinetics on the emission properties of alternating current-voltage-driven ECLDs. A model based on the diffusion and reaction rate equations is developed to predict the operational frequency ( f)-dependent luminance properties of the ECLD. It is found that more frequent generation of the redox precursors with a shorter time interval enhances their probability of encountering each other, and therefore the luminance of the device increases with increasing f initially. The luminance at a higher f, however, is suppressed eventually due to the decreased rate of the electrode reactions. Using the model, the influence of diffusion and reaction rates on the performance of an ECLD is analyzed separately and systematically. The results provide insight on the operation of this emerging class of a light-emitting device platform.

Lead halide perovskites with nanoscale geometries have received recent attention due to the defect-tolerant high photoluminescence quantum yield at tunable emission wavelengths and the possibility of room-temperature synthesis that does not compromise the physical properties of the materials. These characteristics offer opportunities to advance displays that cover the widest perceivable color. However, lead toxicity obstructs the commercialization of this technology. Therefore, recent efforts have investigated lead-free halide perovskite nanocrystals. Here, we provide our perspectives on the most exciting achievements in the materials design and photophysical properties of lead-free perovskite nanocrystals, particularly for applications in light-emitting devices. This Perspective includes a short summary on the characteristic features of halide perovskite nanocrystals; discussion on the candidate elements to replace lead; methods to prepare colloidal lead-free perovskite nanocrystals; methods to control and enhance the optical properties; a recent demonstration of utilizing lead-free perovskite nanocrystals in light-emitting devices; and an outlook on the field.

We present nonvolatile transistor memory devices that rely on the formation of electric double layer (EDL) at the semiconductor-electrolyte interface. The two critical functional components of the devices are the ion gel electrolyte and gold nanoparticles (NPs). The ion gel electrolyte contains ionic species for EDL formation that allow inducing charges in the semiconductor-electrolyte interface. The gold NPs inserted between the ion gel and the channel layer serve as trapping sites to the induced charges to store the electrical input signals. Two different types of gold NPs were used: one prepared using direct thermal evaporation and the other prepared using a colloidal process. The organic ligands attached onto the colloidal gold NPs prevented the escape of the trapped charges from the particles and thus enhanced the retention characteristics of the programmed/erased signals. The low-voltage-driven EDL formation resulted in a programmed/erased memory signal ratio larger than 10 3 from the nonvolatile indium-gallium-zinc oxide transistor memory devices at voltages below 10 V, which could be held for >10 5 s. The utility of the electrolytes to operate memory devices demonstrated herein should provide an alternative strategy to realize cheap, portable electronic devices powered with thin-film batteries.

With the increase in interest in wearable tactile pressure sensors for e-skin, researches to make nanostructures to achieve high sensitivity have been actively conducted. However, limitations such as complex fabrication processes using expensive equipment still exist. Herein, simple lithography-free techniques to develop pyramid-like metal/insulator hybrid nanostructures utilizing nanocrystals (NCs) are demonstrated. Ligand-exchanged and unexchanged silver NC thin films are used as metallic and insulating components, respectively. The interfaces of each NC layer are chemically engineered to create discontinuous insulating layers, i.e., spacers for improved sensitivity, and eventually to realize fully solution-processed pressure sensors. Device performance analysis with structural, chemical, and electronic characterization and conductive atomic force microscopy study reveals that hybrid nanostructure based pressure sensor shows an enhanced sensitivity of higher than 500 kPa -1 , reliability, and low power consumption with a wide range of pressure sensing. Nano-/micro-hierarchical structures are also designed by combining hybrid nanostructures with conventional microstructures, exhibiting further enhanced sensing range and achieving a record sensitivity of 2.72 × 10 4 kPa -1 . Finally, all-solution-processed pressure sensor arrays with high pixel density, capable of detecting delicate signals with high spatial selectivity much better than the human tactile threshold, are introduced.

Two types of thin-film electrochemical devices (electrolyte-gated transistors and electrochemical light-emitting cells) are demonstrated using area-controllable ionogel patches generated by transfer-stamping. For the successful transfer of ionogel patches on various target substrates, thermoreversible gelation by phase-separated polymer crystals within the ionogel is essential because it allows the gel to form a conformal contact with the acceptor substrate, thereby lowering the overall Gibbs energy of the system upon transfer of the ionogel. This crystallization-mediated stamping provides a much more efficient deposition route for producing thin films of ionically conductive high-capacitance solid ionogel electrolytes. The lateral dimensions of the transferred ionogels range from 1 mm × 1 mm to 40 mm × 40 mm. These ionogel patches are incorporated in organic p-type and inorganic n-type thin-film transistors and electrochemical light-emitting devices. The resulting transistors show sub-1 V device operation with high transconductance currents, and the optoelectronic devices emit orange light through a series of electrochemical redox reactions. These results demonstrate a simple yet versatile route to employ physical ionogels for various solid-state electrochemical device applications.

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10 7 . The highest hole mobility of 1.51 cm 2 V -1 s -1 and the highest electron mobility of 0.85 cm 2 V -1 s -1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Multilevel data storage using resistive random access memory (RRAM) has attracted significant attention for addressing the challenges associated with the rapid advances in information technologies. However, it is still difficult to secure reliable multilevel resistive switching of RRAM due to the stochastic and multiple formation of conductive filaments (CFs). Herein, we demonstrate that a single CF, derived from selective oxidation by a structured Cu active electrode, can solve the reliability issue. High-quality pyramidal Cu electrodes with a sharp tip are prepared via the template-stripping method. Morphology-dependent surface energy facilitates the oxidation of Cu atoms at the tip rather than in other regions, and the tip-enhanced electric fields can accelerate the transport of the generated Cu ions. As a result, CF growth occurs mainly at the tip of the pyramidal electrode, which is confirmed by high-resolution electron microscopy and elemental analysis. The RRAM exhibits highly uniform and low forming voltages (the average forming voltage and its standard deviation for 20 pyramid-based RRAMs are 0.645 and 0.072 V, respectively). Moreover, all multilevel resistance states for the RRAMs are clearly distinguished and show narrow distributions within 1 order of magnitude, leading to reliable cell-to-cell performance for MLC operation.

High carrier mobilities have recently been achieved in polymer field effect transistors (FETs). However, many of these polymer FET devices require the use of chlorinated solvents such as chloroform (CF), chlorobenzene (CB), and o-dichlorobenzene (DCB) during fabrication. The use of these solvents is highly restricted in industry because of health and environmental issues. Here, we report the synthesis of a low band gap (1.43 eV, 870 nm) semiconducting polymer (PDPP2DT-F2T2) having a planar geometry, which can be readily processable with nonchlorinated solvents such as toluene (TOL), o-xylene (XY), and 1,2,4-trimethylbenzene (TMB). We performed structural characterization of PDPP2DT-F2T2 films prepared from different solvents, and the electrical properties of the films were measured in the context of FETs. The devices exhibited an ambipolar behavior with hole dominant transport. Hole mobilities increased with increasing boiling point (bp) of the nonchlorinated solvents: 0.03, 0.05, and 0.10 cm 2 V -1 s -1 for devices processed using TOL, XY, and TMB, respectively. Thermal annealing further improved the FET performance. TMB-based polymer FETs annealed at 200 °C yielded a maximum hole mobility of 1.28 cm 2 V -1 s -1 , which is far higher than the 0.43 cm 2 V -1 s -1 obtained from the CF-based device. This enhancement was attributed to increased interchain interactions as well as improved long-range interconnection between fibrous domains. Moreover, all of the nonchlorinated solutions generated purely edge-on orientations of the polymer chains, which is highly beneficial for carrier transport in FET devices. Furthermore, we fabricated an array of flexible TMB-processed PDPP2DT-F2T2 FETs on the plastic PEN substrates. These devices demonstrated excellent carrier mobilities and negligible degradation after 300 bending cycles. Overall, we demonstrated that the organized assembly of polymer chains can be achieved by slow drying using high bp nonchlorinated solvents and a post thermal treatment. Furthermore, we showed that polymer FETs processed using high bp nonhalogenated solvents may outperform those processed using halogenated solvents.

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

Herein, we report unique features of the assemblies of tetrapod-shaped colloidal nanocrystals (TpNCs) with lengthy arms applicable to flexible thin-film transistors. Due to the extended nature of tetrapod geometry, films made of the TpNC assemblies require reduced numbers of inter-NC hopping for the transport of charge carriers along a given channel length; thus, enhanced conductivity can be achieved compared to those made of typical spherical NCs without arms. Moreover, electrical conduction through the assemblies is tolerant against mechanical bending because interconnections between TpNCs can be well-preserved under bending. Interestingly, both the conductivity of the assemblies and their mechanical tolerance against bending are improved with an increase in the length of tetrapod arms. The arm length-dependency was demonstrated in a series of CdSe TpNC assemblies with different arm lengths (l = 0-90 nm), whose electrical conduction was modulated through electrolyte gating. From the TpNCs with the longest arm length included in the study (l = 90 nm), the film conductivity as high as 20 S/cm was attained at 3 V of gate voltage, corresponding to electron mobility of >10 cm 2 /(V s) even when evaluated conservatively. The high channel conductivity was retained (∼90% of the value obtained from the flat geometry) even under high bending (bending radius = 5 mm). The results of the present study provide new insights and guidelines for the use of colloidal nanocrystals in solution-processed flexible electronic device applications.

Field-effect mobility of a polymer semiconductor film is known to be enhanced when the gate dielectric interfacing with the film is weakly polarizable. Accordingly, gate dielectrics with lower dielectric constant (k) are preferred for attaining polymer field-effect transistors (PFETs) with larger mobilities. At the same time, it is also known that inducing more charge carriers into the polymer semiconductor films helps in enhancing their field-effect mobility, because the large number of traps presented in such a disorder system can be compensated substantially. In this sense, it may seem that employing higher k dielectrics is rather beneficial because capacitance is proportional to the dielectric constant. This, however, contradicts with the statement above. In this study, we compare the impact of the two, i.e., the polarizability and the capacitance of the gate dielectric, on the transport properties of poly[(diketopyrrolopyrrole)-alt-(2,2'-(1,4-phenylene)bisthiophene)] (PDPPTPT) semiconductor layers in an FET architecture. For the study, three different dielectric layers were employed: fluorinated organic CYTOP (k = ∼2), poly(methyl methacrylate) (k = ∼4), and relaxor ferroelectric poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (k = ∼60). The beneficial influence of attaining more carriers in the PDPPTPT films on their charge transport properties was consistently observed from all three systems. However, the more dominant factor determining the large carrier mobility was the low polarizability of the gate dielectric rather than its large capacitance; field-effect mobilities of PDPPTPT films were always larger when lower k dielectric was employed than when higher k dielectric was used. The higher mobilities obtained when using lower k dielectrics could be attributed to the suppressed distribution of the density of localized states (DOS) near the transport level and to the resulting enhanced electronic coupling between the macromolecules.

Biocompatible nanomaterials that allow for labeling cells and tissues with the capacity to load and deliver drug molecules hold great promise for the therapeutic-diagnostic purposes in tissue repair and disease cure. Here a novel nanoplatform, called C-dot bioactive organosilica nanosphere (C-BON), is introduced to have excellent theranostic potential, such as controlled drug delivery, visible-light imaging, and NIR photothermal activity. C-dots with a few nanometers were in situ generated in the Ca-containing organosilica mesoporous nanospheres through the sol-gel and thermal-treatment processes. The C-BON exhibited multicolor luminescence over a wide visible-light range with strong emissions and high photostability over time and against acidity and the possible in vivo optical imaging capacity when injected in rat subcutaneous tissues. Moreover, the C-BON showed a photothermal heating effect upon the irradiation of near-infrared. The C-BON, thanks to the high mesoporosity and existence of Ca(2+) ions, demonstrated excellent loading capacity of anticancer drug doxorubicin (as high as 90% of carrier weight) and long-term (over a couple of weeks) and pH/NIR-dependent release ability. The C-BON preserved the compositional merit of Ca-Si glass, having excellent bioactivity and cell compatibility in vitro. Taken all, the multifunctional properties of C-BON-multicolor luminescence, photothermal activity, and high drug loading and controlled release-together with its excellent bioactivity and cell compatibility potentiate the future applications in theranostics (chemotherapy and photothermal therapy with optical imaging).

Novel carbazole-based hole-transporting materials (HTMs), including extended π-conjugated central core units such as 1,4-phenyl, 4,4'-biphenyl, or 1,3,5-trisphenylbenzene for promoting effective π-π stacking as well as the hexyloxy flexible group for enhancing solubility in organic solvent, have been synthesized as HTM of perovskite-sensitized solar cells. A HTM with 1,3,5-trisphenylbenzene core, coded as SGT-411, exhibited the highest charge conductivity caused by its intrinsic property to form crystallized structure. The perovskite-sensitized solar cells with SGT-411 exhibited the highest PCE of 13.00%, which is 94% of that of the device derived from spiro-OMeTAD (13.76%). Time-resolved photoluminescence spectra indicate that SGT-411 shows the shortest decay time constant, which is in agreement with the trends of conductivity data, indicating it having fastest charge regeneration. In this regard, a carbazole-based HTM with star-shaped chemical structure is considered to be a promising candidate HTM.

We report the observation of band-like transport from printed polymer thin films at room temperature. This was achieved from donor-acceptor type thiophene-thiazole copolymer that was carefully designed to enhance the planarity of the backbone and the resulting transfer integral between the macromolecules. Due to the strong molecular interaction, the printed polymer film exhibited extremely low trap density comparable to that of molecular single crystals. Moreover, the energy barrier height for charge transport could be readily reduced with the aid of electric field, which led formation of extended electron states for band-like charge transport at room temperature.

We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.

We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.

Highly uniform large-scale assembly of nanoscale building blocks can enable unique collective properties for practical electronic and photonic devices. We present a two-dimensional (2-D), millimeter-scale network of colloidal CdSe nanorods (NRs) in monolayer thickness through end-to-end linking. The colloidal CdSe NRs are sterically stabilized with tetradecylphosphonic acid (TDPA), and their tips are partially etched in the presence of gold chloride (AuCl3) and didecyldimethylammonium bromide (DDAB), which make them unwetted in toluene. This change in surface wetting property leads to spontaneous adsorption at the 2-D air/toluene interface. Anisotropy in both the geometry and the surface property of the CdSe NRs causes deformation of the NR/toluene/air interface, which derives capillary attraction between tips of neighboring NRs inward. As a result, the NRs confined at the interface spontaneously form a 2-D network composed of end-to-end linkages. We employ a vertical-deposition approach to maintain a consistent rate of NR supply to the interface during the assembly. The rate control turns out to be pivotal in the preparation of a highly uniform large scale 2-D network without aggregation. In addition, unprecedented control of the NR density in the network was possible by adjusting either the lift-up speed of the immersed substrate or the relative concentration of AuCl3 to DDAB. Our findings provide important design criteria for 2-D assembly of anisotropic nanobuilding blocks.

The molecular packing structures of two conjugated polymers based on alkoxy naphthalene, one with cyano-substituents and one without, have been investigated to determine the effects of electron-withdrawing cyano-groups on the performance of bulk-heterojunction solar cells. The substituted cyano-groups facilitate the self-assembly of the polymer chains, and the cyano-substituted polymer:PC71BM blend exhibits enhanced exciton dissociation to PC71BM. Moreover, the electron-withdrawing cyano-groups lower the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels of the conjugated polymer, which leads to a higher open circuit voltage (V(OC)) and a lower energy loss during electron transfer from the donor to the acceptor. A bulk-heterojunction device fabricated with the cyano-substituted polymer:PC71BM blend has a higher V(OC) (0.89 V), a higher fill factor (FF) (51.4%), and a lower short circuit current (J(SC)) (7.4 mA/cm(2)) than that of the noncyano-substituted polymer:PC71BM blend under AM 1.5G illumination with an intensity of 100 mW cm(-2). Thus, the cyano-substitution of conjugated polymers may be an effective strategy for optimizing the domain size and crystallinity of the polymer:PC71BM blend, and for increasing V(OC) by tuning the HOMO and LUMO energy levels of the conjugated polymer.

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

Nanocrystals are known to alter the relative stability of bulk solid phases. Here we test the limits of this effect on Ag2Se nanocrystals, a promising new electronic and infrared material. In the bulk, Ag2Se exhibits a solid-solid phase transition to a superionic conducting phase at moderate temperatures. We map this phase transition as a function of size, temperature, and surface treatment in Ag2Se core-only and core-shell nanocrystals. We show that the transition can be tuned not just below but also above the bulk phase-transition temperature. This phase flexibility has implications for applications in optoelectronic and phase-memory devices.

An In/Ga-free doping method of zinc oxide (ZnO) is demonstrated utilizing a printable charge transfer doping layer (CTDL) based on (3-aminopropyl)triethoxysilane (APS) molecules. The self-assembled APS molecules placed on top of ZnO thin films lead to n-type doping of ZnO and filling shallow electron traps, due to the strong electron-donating characteristics of the amine group in APS molecules. The CTDL doping can tune the threshold voltage and the mobility of the ZnO thin-film transistors (TFTs) as one varies the grafting density of the APS molecules and the thickness of the underneath ZnO thin films. From an optimized condition, high-performance ZnO TFTs can be achieved that exhibit an electron mobility of 4.2 cm(2)/(V s), a threshold voltage of 10.5 V, and an on/off current ratio larger than 10(7). More importantly, the method is applicable to simple inkjet processes, which lead to produce high-performance depletion load ZnO inverters through selective deposition of CTDL on ZnO thin films.

We demonstrate low-voltage, flexible, transparent pentacene humidity sensors with ultrahigh sensitivity, good reliability, and fast response/recovery behavior. The excellent performances of these devices are derived from an inserted polyelectrolyte (poly[2-(methacryloyloxy)ethyltrimethylammonium chloride-co-3-(trimethoxysilyl)propyl methacrylate] (poly(METAC-co-TSPM)) interlayer, which releases free Cl- ions in the electrolyte dielectric layer under humid conditions and boosts the electrical current in the transistor channel. This has led to extreme device sensitivity, such that electrical signal variations exceeding 7 orders of magnitude have been achieved in response to a 15% change in the relative humidity level. The new sensors exhibit a fast responsivity and a stable performance toward changes in humidity levels. Furthermore, the humidity sensors, mounted on flexible substrates, provided low voltage (<5 V) operation while preserving the unique ultrasensitivity and fast responsivity of these devices. We believe that the strategy of utilizing the enhanced ion motion in an inserted polyelectrolyte layer of an OFET structure can potentially improve sensor technologies beyond humidity-responsive systems.