1. Depth Profiling Charge Accumulation from a Ferroelectricinto a Doped Mott Insulator.
- Author
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Maya Marinova, Julien E. Rault, Alexandre Gloter, Slavomir Nemsak, Gunnar K. Palsson, Jean-Pascal Rueff, CharlesS. Fadley, Cécile Carrétéro, Hiroyuki Yamada, Katia March, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Odile Stéphan, Christian Colliex, and Manuel Bibes
- Subjects
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DEPTH profiling , *FERROELECTRIC crystals , *MOTT effect (Physics) , *ELECTRIC insulators & insulation , *STORAGE batteries , *ELECTRIC fields , *CHARGE density waves - Abstract
Theelectric field control of functional properties is a crucial goalin oxide-based electronics. Nonvolatile switching between differentresistivity or magnetic states in an oxide channel can be achievedthrough charge accumulation or depletion from an adjacent ferroelectric.However, the way in which charge distributes near the interface betweenthe ferroelectric and the oxide remains poorly known, which limitsour understanding of such switching effects. Here, we use a first-of-a-kindcombination of scanning transmission electron microscopy with electronenergy loss spectroscopy, near-total-reflection hard X-ray photoemissionspectroscopy, and ab initio theory to address this issue. We achievea direct, quantitative, atomic-scale characterization of the polarization-inducedcharge density changes at the interface between the ferroelectricBiFeO3and the doped Mott insulator Ca1–xCexMnO3, thusproviding insight on how interface-engineering can enhance these switchingeffects. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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