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As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/Al x Ga 1- x As/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semiempirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2-3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method enables the development of advanced heterostructure schemes for a more effective utilization of the nanowire platform; moreover, it is considered expandable to other material systems and nanostructure types.

The present work reports a systematic study of the potential degradation of metals and dielectric thin films in different space environments. The mono- and bilayers selected are made of materials commonly used for the realization of optical components, such as reflective mirrors or building blocks of interferential filters. More than 400 samples were fabricated and irradiated with protons at different energies on ground-based facilities. The fluences were selected as a result of simulations of the doses delivered within a long-term space mission considering different orbits (Sun close, Jovian, and Geostationary orbits). In order to stress the samples at different depths and layer interfaces, experiments were carried out with a range of proton energies within 1 and 10 MeV values. An estimate of a safe maximum fluence has been provided for each type of sample at each energy. The damage mechanism, when present, has been investigated with different optical and structural techniques.

Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.

This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative device that can be dynamically programmed to perform as either an n- or p-FET by applying appropriate gate potentials. In this work, an insulating 2D material, hexagonal boron nitride (hBN), is introduced as a gate dielectric and encapsulation layer around the nanowire in place of a thermally grown or atomic-layer-deposited oxide. hBN flake was mechanically exfoliated and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic stamping transfer technique. The thickness of the hBN flakes was investigated by atomic force microscopy and transmission electron microscopy. The ambipolar transfer characteristics of the Si-hBN RFETs with different gating architectures showed a significant improvement in the device's electrical parameters due to the encapsulation and passivation of the nanowire with the hBN flake. Both n- and p-type characteristics measured through the top gate exhibited a reduction of hysteresis by 10-20 V and an increase in the on-off ratio ( I ON / I OFF ) by 1 order of magnitude (up to 10 8 ) compared to the values measured for unpassivated nanowire. Specifically, the hBN encapsulation provided improved electrostatic top gate coupling, which is reflected in the enhanced subthreshold swing values of the devices. For a single nanowire, an improvement up to 0.97 and 0.5 V/dec in the n- and p-conduction, respectively, is observed. Due to their dynamic switching and polarity control, RFETs boast great potential in reducing the device count, lowering power consumption, and playing a crucial role in advanced electronic circuitry. The concept of mixed-dimensional RFET could further strengthen its functionality, opening up new pathways for future electronics.

The use of metal nanoparticles (NPs) as antimicrobial agents has become a promising alternative to the problem of antibiotic-resistant bacteria and other applications. Silver nanoparticles (AgNPs) are well-known as one of the most universal biocide compounds. However, selenium nanoparticles (SeNPs) recently gained more attention as effective antimicrobial agents. This study aims to investigate the antibacterial activity of SeNPs with different surface coatings (BSA-coated, chitosan-coated, and undefined coating) on the Gram-negative Stenotrophomonas bentonitica and the Gram-positive Lysinibacillus sphaericus in comparison to AgNPs. The tested NPs had similar properties, including shape (spheres), structure (amorphous), and size (50-90 nm), but differed in their surface charge. Chitosan SeNPs exhibited a positive surface charge, while the remaining NPs assayed had a negative surface charge. We have found that cell growth and viability of both bacteria were negatively affected in the presence of the NPs, as indicated by microcalorimetry and flow cytometry. Specifically, undefined coating SeNPs displayed the highest percentage values of dead cells for both bacteria (85-91%). An increase in reactive oxygen species (ROS) production was also detected. Chitosan-coated and undefined SeNPs caused the highest amount of ROS (299.7 and 289% over untreated controls) for S. bentonitica and L. sphaericus , respectively. Based on DNA degradation levels, undefined-SeNPs were found to be the most hazardous, causing nearly 80% DNA degradation. Finally, electron microscopy revealed the ability of the cells to transform the different SeNP types (amorphous) to crystalline SeNPs (trigonal/monoclinical Se), which could have environmentally positive implications for bioremediation purposes and provide a novel green method for the formation of crystalline SeNPs. The results obtained herein demonstrate the promising potential of SeNPs for their use in medicine as antimicrobial agents, and we propose S. bentonitica and L. sphaericus as candidates for new bioremediation strategies and NP synthesis with potential applications in many fields.

B20-CoSi is a newly discovered Weyl semimetal that crystallizes into a noncentrosymmetric crystal structure. However, the investigation of B20-CoSi has so far been focused on bulk materials, whereas the growth of thin films on technology-relevant substrates is a prerequisite for most practical applications. In this study, we have used millisecond-range flash-lamp annealing, a nonequilibrium solid-state reaction, to grow B20-CoSi thin films. By optimizing the annealing parameters, we were able to obtain thin films with a pure B20-CoSi phase. The magnetic and transport measurements indicate the appearance of the charge density wave and chiral anomaly. Our work presents a promising method for preparing thin films of most binary B20 transition-metal silicides, which are candidates for topological Weyl semimetals.

ConspectusMetal aerogels assembled from nanoparticles have captured grand attention because they combine the virtues of metals and aerogels and are regarded as ideal materials to address current environmental and energy issues. Among these aerogels, those composed of two metals not only display combinations (superpositions) of the properties of their individual metal components but also feature novel properties distinctly different from those of their monometallic relatives. Therefore, quite some effort has been invested in refining the synthetic methods, compositions, and structures of such bimetallic aerogels as to boost their performance for the envisaged application(s). One such use would be in the field of electrocatalysis, whereby it is also of utmost interest to unravel the element distributions of the (multi)metallic catalysts to achieve a ratio of their bottom-to-up design. Regarding the element distributions in bimetallic aerogels, advanced characterization techniques have identified alloys, core-shells, and structures in which the two metal particles are segregated (i.e., adjacent but without alloy or core-shell structure formation). While an almost infinite number of metal combinations to form bimetallic aerogels can be envisaged, the knowledge of their formation mechanisms and the corresponding element distributions is still in its infancy. The evolution of the observed musters is all but well understood, not to mention the positional changes of the elements observed in operando or in beginning- vs end-of-life comparisons (e.g., in fuel cell applications).With this motivation, in this Account we summarize the endeavors made in element distribution monitoring in bimetallic aerogels in terms of synthetic methods, expected structures, and their evolution during electrocatalysis. After an introductory chapter, we first describe briefly the two most important characterization techniques used for this, namely, scanning transmission electron microscopy (STEM) combined with element mapping (e.g., energy-dispersive X-ray spectroscopy (EDXS)) and X-ray absorption spectroscopy (XAS). We then explain the universal methods used to prepare bimetallic aerogels with different compositions. Those are divided into one-step methods in which gels formed from mixtures of the respective metal salts are coreduced and two-step approaches in which monometallic nanoparticles are mixed and gelated. Subsequently, we summarize the current state-of-knowledge on the element distributions unraveled using diverse characterization methods. This is extended to investigations of the element distributions being altered during electrochemical cycling or other loads. So far, a theoretical understanding of these processes is sparse, not to mention predictions of element distributions. The Account concludes with a series of remarks on current challenges in the field and an outlook on the gains that the field would earn from a solid understanding of the underlying processes and a predictive theoretical backing.

Alteration of transport properties of any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (V o ) in the system. It plays a decisive role in controlling the resistive switching (RS) performance of metal oxide-based memory devices. Therefore, a judicious choice of dopants and their atomic concentrations is crucial for achieving an optimum V o configuration. Here, we show that the rational designing of RS memory devices with cationic dopants (Ta), in particular, Au/Ti 1- x Ta x O 2-δ /Pt devices, is promising for the upcoming non-volatile memory technology. Indeed, a current window of ∼10 4 is realized at an ultralow voltage as low as 0.25 V with significant retention (∼10 4 s) and endurance (∼10 5 cycles) of the device by considering 1.11 at % Ta doping. The obtained device parameters are compared with those in the available literature to establish its excellent performance. Furthermore, using detailed experimental analyses and density functional theory (DFT)-based first-principles calculations, we comprehend that the meticulous presence of V o configurations and the columnar-like dendritic structures is crucial for achieving ultralow-voltage bipolar RS characteristics. In fact, the dopant-mediated V o interactions are found to be responsible for the enhancement in local current conduction, as evidenced from the DFT-simulated electron localization function plots, and these, in turn, augment the device performance. Overall, the present study on cationic-dopant-controlled defect engineering could pave a neoteric direction for future energy-efficient oxide memristors.

Among other new device concepts, nickel silicide (NiSi x )-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide semiconductor (CMOS) technology as its physical limits are reached. Control over the NiSi x phase and its intrusions into the nanowire is essential for superior performance and down-scaling of these devices. Several works have shown control over the phase, but control over the intrusion lengths has remained a challenge. To overcome this, we report a novel millisecond-range flash lamp annealing (FLA)-based silicidation process. Nanowires are fabricated on silicon-on-insulator substrates using a top-down approach. Subsequently, Ni silicidation experiments are carried out using FLA. It is demonstrated that this silicidation process gives unprecedented control over the silicide intrusions. Scanning electron microscopy and high-resolution transmission electron microscopy are performed for structural characterization of the silicide. FLA temperatures are estimated with the help of simulations.

The shape of nanomaterials affects their colloidal properties, cellular uptake, and fate in the environment. The microbial origin and microenvironment can play a role in altering the shape of the nanomaterial. However, such studies have never been conducted. Here, we demonstrate that the selenium nanomaterials produced by Escherichia coli K-12 are stable and remain as BioSe-Nanospheres under thermophilic conditions, while those produced by anaerobic granular sludge transform to BioSe-Nanorods, due to a lower quantity of proteins coating these nanoparticles, which has been verified by proteomics analysis as well as using chemically synthesized selenium nanomaterials. Furthermore, the presence of Bacillus safensis JG-B5T transform the purified BioSe-Nanospheres produced by E. coli K-12 to BioSe-Nanorods, though they are not transformed in the absence of B. safensis JG-B5T. This is due to the production of peptidases by B. safensis JG-B5T that cleaves the protein coating the BioSe-Nanospheres produced by E. coli K-12, leading to their transformation to trigonal BioSe-Nanorods, which is the thermodynamically more stable state. These findings suggest that the fate of selenium and probably other redox-active elements released from the biological wastewater treatment units needs to be reevaluated and improved by including microbial criteria for better accuracy.

Cation exchange emerged as a versatile tool to obtain a variety of nanocrystals not yet available via a direct synthesis. Reduced reaction times and moderate temperatures make the method compatible with anisotropic nanoplatelets (NPLs). However, the subtle thermodynamic and kinetic factors governing the exchange require careful control over the reaction parameters to prevent unwanted restructuring. Here, we capitalize on the research success of CdSe NPLs by transforming them into PbSe NPLs suitable for optoelectronic applications. In a two-phase mixture of hexane/ N -methylformamide, the oleate-capped CdSe NPLs simultaneously undergo a ligand exchange to NH 4 I and a cation exchange reaction to PbSe. Their morphology and crystal structure are well-preserved as evidenced by electron microscopy and powder X-ray diffraction. We demonstrate the successful ligand exchange and associated electronic coupling of individual NPLs by fabricating a simple photodetector via spray-coating on a commercial substrate. Its optoelectronic characterization reveals a fast light response at low operational voltages.

In this study, we investigated the interaction of U(VI) and Eu(III) with Brassica napus suspension plant cells as a model system. Concentration-dependent (0-200 μM) bioassociation experiments showed that more than 75% of U(VI) and Eu(III) were immobilized by the cells. In addition to this phenomenon, time-dependent studies for 1 to 72 h of exposure showed a multistage bioassociation process for cells that were exposed to 200 μM U(VI), where, after initial immobilization of U(VI) within 1 h of exposure, it was released back into the culture medium starting within 24 h. A remobilization to this extent has not been previously observed. The MTT (3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) assay was used to correlate the bioassociation behavior of Eu and U with the cell vitality. Speciation studies by spectroscopy and in silico methods highlighted various U and Eu species over the course of exposure. We were able to observe a new U species, which emerged simultaneously with the remobilization of U back into the solution, which we assume to be a U(VI) phosphate species. Thus, the interaction of U(VI) and Eu(III) with released plant metabolites could be concluded.

Nanoscale, low-phase-noise, tunable transmitter-receiver links are key for enabling the progress of wireless communication. We demonstrate that vortex-based spin-torque nano-oscillators, which are intrinsically low-noise devices because of their topologically protected magnetic structure, can achieve frequency tunability when submitted to local ion implantation. In the experiments presented here, the gyrotropic mode is excited with spin-polarized alternating currents and anisotropic magnetoresistance measurements yield discrete frequencies from a single device. Indeed, chromium-implanted regions of permalloy disks exhibit different saturation magnetization than neighboring, non-irradiated areas, and thus different resonance frequency, corresponding to the specific area where the core is gyrating. Our study proves that such devices can be fabricated without the need for further lithographical steps, suggesting ion irradiation can be a viable and cost-effective fabrication method for densely packed networks of oscillators.

The material-efficient monolayers of transition-metal dichalcogenides (TMDs) are a promising class of ultrathin nanomaterials with properties ranging from insulating through semiconducting to metallic, opening a wide variety of their potential applications from catalysis and energy storage to optoelectronics, spintronics, and valleytronics. In particular, TMDs have a great potential as emerging inexpensive alternatives to noble metal-based catalysts in electrochemical hydrogen evolution. Herein, we report a straightforward, low-cost, and general colloidal synthesis of various 2D transition-metal disulfide nanomaterials, such as MoS 2 , WS 2 , NiS x , FeS x , and VS 2 , in the absence of organic ligands. This new preparation route provides many benefits including relatively mild reaction conditions, high reproducibility, high yields, easy upscaling, no post-thermal annealing/treatment steps to enhance the catalytic activity, and, finally, especially for molybdenum disulfide nanosheets, high activity in the hydrogen evolution reaction. To underline the universal application of the synthesis, we prepared mixed Co x Mo 1- x S 2 nanosheets in one step to optimize the catalytic activity of pure undoped MoS 2 , which resulted in an enhanced hydrogen evolution reaction performance characterized by onset potentials as low as 134 mV and small Tafel slopes of 55 mV/dec.

Indium selenide (InSe) and gallium selenide (GaSe), members of the III-VI chalcogenide family, are emerging two-dimensional (2D) semiconductors with appealing electronic properties. However, their devices are still lagging behind because of their sensitivity to air and device fabrication processes which induce structural damage and hamper their intrinsic properties. Thus, in order to obtain high-performance and stable devices, effective passivation of these air-sensitive materials is strongly required. Here, we demonstrate a hexagonal boron nitride (hBN)-based encapsulation technique, where 2D layers of InSe and GaSe are covered entirely between two layers of hBN. To fabricate devices out of fully encapsulated 2D layers, we employ the lithography-free via-contacting scheme. We find that hBN acts as an excellent encapsulant and a near-ideal substrate for InSe and GaSe by passivating them from the environment and isolating them from the charge disorder at the SiO 2 surface. As a result, the encapsulated InSe devices are of high quality and ambient-stable for a long time and show an improved two-terminal mobility of 30-120 cm 2 V -1 s -1 as compared to mere ∼1 cm 2 V -1 s -1 for unencapsulated devices. On employing this technique to GaSe, we obtain a strong and reproducible photoresponse. In contrast to previous studies, where either good performance or long-term stability was achieved, we demonstrate a combination of both in our devices. This work thus provides a systematic study of fully encapsulated devices based on InSe and GaSe, which has not been reported until now. We believe that this technique can open ways for fundamental studies as well as toward the integration of these materials in technological applications.

Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared with their ferromagnetic counterparts. Whereas nanoscale thin-film materials are key to the development of future antiferromagnetic spintronic technologies, existing experimental tools tend to suffer from low resolution or expensive and complex equipment requirements. We offer a simple, high-resolution alternative by addressing the ubiquitous surface magnetization of magnetoelectric antiferromagnets in a granular thin-film sample on the nanoscale using single-spin magnetometry in combination with spin-sensitive transport experiments. Specifically, we quantitatively image the evolution of individual nanoscale antiferromagnetic domains in 200 nm thin films of Cr 2 O 3 in real space and across the paramagnet-to-antiferromagnet phase transition, finding an average domain size of 230 nm, several times larger than the average grain size in the film. These experiments allow us to discern key properties of the Cr 2 O 3 thin film, including the boundary magnetic moment density, the variation of critical temperature throughout the film, the mechanism of domain formation, and the strength of exchange coupling between individual grains comprising the film. Our work offers novel insights into the magnetic ordering mechanism of Cr 2 O 3 and firmly establishes single-spin magnetometry as a versatile and widely applicable tool for addressing antiferromagnetic thin films on the nanoscale.

Future space missions will operate in increasingly hostile environments, such as those in low-perihelion solar orbits and Jovian magnetosphere. This exploration involves the selection of optical materials and components resistant to the environmental agents. The conditions in space are reproduced on ground through the use of ion accelerators. The effects of He particles coming from the solar wind impinging on a gold thin film have been systematically investigated, considering absorbed doses compatible with the duration of the European Space Agency Solar Orbiter mission. Structural and morphological changes have been proved to be dependent not only on the dose but also on the irradiation flux. A predictive model of the variation of thin film reflectance has been developed for the case of lower flux irradiation. The results are discussed regarding reliability and limitations of laboratory testing. The outcomes are important to address the procedures for the space qualification tests of optical coatings.

The nondestructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in three-dimension but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential, MIP) and space charges. In this Letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual ⟨111⟩ oriented GaAs-AlGaAs core-multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au-NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level.

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy, and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/amorphous Si (∼60 nm)/Ag (∼30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650 °C. Its initial and final composition, stacking order, and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

Manipulation of magnetism using laser light is considered as a key to the advancement of data storage technologies. Until now, most approaches seek to optically switch the direction of magnetization rather than to reversibly manipulate the ferromagnetism itself. Here, we use ∼100 fs laser pulses to reversibly switch ferromagnetic ordering on and off by exploiting a chemical order-disorder phase transition in Fe 60 Al 40 , from the B2 to the A2 structure and vice versa. A single laser pulse above a threshold fluence causes nonferromagnetic B2 Fe 60 Al 40 to disorder and form the ferromagnetic A2 structure. Subsequent laser pulsing below the threshold reverses the surface to B2 Fe 60 Al 40 , erasing the laser-induced ferromagnetism. Simulations reveal that the order-disorder transition is regulated by the extent of surface supercooling; above the threshold for complete melting throughout the film thickness, the liquid phase can be deeply undercooled before solidification. As a result, the vacancy diffusion in the resolidified region is limited and the region is trapped in the metastable chemically disordered state. Laser pulsing below the threshold forms a limited supercooled surface region that solidifies at sufficiently high temperatures, enabling diffusion-assisted reordering. This demonstrates that ultrafast lasers can achieve subtle atomic rearrangements in bimetallic alloys in a reversible and nonvolatile fashion.

We report on the enhancement and modulation of nonlinear optical response in an Nd:Y 3 Al 5 O 12 (Nd:YAG) laser crystal through embedded silver nanoparticles (NPs) fabricated by Ag + ion implantation. The linear absorption spectrum of the sample clearly reveals a localized surface plasmon resonance (SPR) band from 350 to 700 nm correlated to the Ag NPs. By using the Z-scan technique with femtosecond pulses at a wavelength of 515 nm, which is considered as an optical excitation within the SPR band, the nonlinear refraction index reaches values as high as ∼10 -12 cm 2 /W, enhanced by ∼4 orders of magnitude in comparison to that of unimplanted Nd:YAG (without Ag NPs). In addition, it has been shown that embedded Ag NPs in the Nd:YAG host reveal saturable absorption signifying the nonlinear responses. We have also observed that the nonlinear absorption coefficients depend significantly on the excitation energy and can be modulated by varying the fluence of Ag + ions., Competing Interests: The authors declare no competing financial interest.

The Np V retention by siderite, an Fe II carbonate mineral with relevance for the near-field of high-level radioactive waste repositories, was investigated under anoxic conditions. Batch sorption experiments show that siderite has a high affinity for aqueous Np V O 2 across pH 7 to 13 as expressed by solid-water distribution coefficients, log R + > 5, similar to the log R d, > 5, similar to the log R d determined for the (solely) tetravalent actinide Th on calcite, suggesting reduction of Np V to Np IV by siderite. Np L 3 -edge X-ray absorption near edge (XANES) spectroscopy conducted in a pH range typical for siderite-containing host rocks (7-8), confirmed the tetravalent Np oxidation state. Extended X-ray absorption fine-structure (EXAFS) spectroscopy revealed a local structure in line with NpO 2 -like nanoparticles with diameter < 1 nm, a result further corroborated by high-resolution transmission electron microscopy (HRTEM). The low solubility of these NpO 2 -like nanoparticles (∼10 -9 M), along with their negligible surface charge at neutral pH conditions which favors particle aggregation, suggest an efficient retention of Np in the near-field of radioactive waste repositories. When Np V was added to ferrous carbonate solution, the subsequent precipitation of siderite did not lead to a structural incorporation of Np IV by siderite, but caused precipitation of a Np IV pentacarbonate phase.

We introduce droplet-confined alternate pulsed epitaxy for the self-catalyzed growth of GaAs nanowires on Si(111) substrates in the temperature range from 550 °C down to 450 °C. This unconventional growth mode is a modification of the migration-enhanced epitaxy, where alternating pulses of Ga and As4 are employed instead of a continuous supply. The enhancement of the diffusion length of Ga adatoms on the {11̅0} nanowire sidewalls allows for their targeted delivery to the Ga droplets at the top of the nanowires and, thus, for a highly directional growth along the nanowire axis even at temperatures as low as 450 °C. We demonstrate that the axial growth can be simply and abruptly interrupted at any time without the formation of any defects, whereas the growth rate can be controlled with high accuracy down to the monolayer scale, being limited only by the stochastic nature of nucleation. Taking advantage of these unique possibilities, we were able to probe and describe quantitatively the population dynamics of As inside the Ga droplets in specially designed experiments. After all, our growth method combines all necessary elements for precise growth control, in-depth investigation of the growth mechanisms and compatibility with fully processed Si-CMOS substrates.

Multiscale self-assembly is ubiquitous in nature but its deliberate use to synthesize multifunctional three-dimensional materials remains rare, partly due to the notoriously difficult problem of controlling topology from atomic to macroscopic scales to obtain intended material properties. Here, we propose a simple, modular, noncolloidal methodology that is based on exploiting universality in stochastic growth dynamics and driving the growth process under far-from-equilibrium conditions toward a preplanned structure. As proof of principle, we demonstrate a confined-but-connected solid structure, comprising an anisotropic random network of silicon quantum-dots that hierarchically self-assembles from the atomic to the microscopic scales. First, quantum-dots form to subsequently interconnect without inflating their diameters to form a random network, and this network then grows in a preferential direction to form undulated and branching nanowire-like structures. This specific topology simultaneously achieves two scale-dependent features, which were previously thought to be mutually exclusive: good electrical conduction on the microscale and a bandgap tunable over a range of energies on the nanoscale.

Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm(2)). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.

The origin of the organic layer covering colloidal biogenic elemental selenium nanoparticles (BioSeNPs) is not known, particularly in the case when they are synthesized by complex microbial communities. This study investigated the presence of extracellular polymeric substances (EPS) on BioSeNPs. The role of EPS in capping the extracellularly available BioSeNPs was also examined. Fourier transform infrared (FT-IR) spectroscopy and colorimetric measurements confirmed the presence of functional groups characteristic of proteins and carbohydrates on the BioSeNPs, suggesting the presence of EPS. Chemical synthesis of elemental selenium nanoparticles in the presence of EPS, extracted from selenite fed anaerobic granular sludge, yielded stable colloidal spherical selenium nanoparticles. Furthermore, extracted EPS, BioSeNPs, and chemically synthesized EPS-capped selenium nanoparticles had similar surface properties, as shown by ζ-potential versus pH profiles and isoelectric point measurements. This study shows that the EPS of anaerobic granular sludge form the organic layer present on the BioSeNPs synthesized by these granules. The EPS also govern the surface charge of these BioSeNPs, thereby contributing to their colloidal properties, hence affecting their fate in the environment and the efficiency of bioremediation technologies.

The reducing conditions in a nuclear waste repository render neptunium tetravalent. Thus, Np is often assumed to be immobile in the subsurface. However, tetravalent actinides can also become mobile if they occur as colloids. We show that Np(IV) is able to form silica-rich colloids in solutions containing silicic acid at concentrations of both the regions above and below the "mononuclear wall" of silicic acid at 2 × 10(-3) M (where silicic acid is expected to start polymerization). These Np(IV)-silica colloids have a size of only very few nanometers and can reach significantly higher concentrations than Np(IV) oxyhydroxide colloids. They can be stable in the waterborne form over longer spans of time. In the Np(IV)-silica colloids, the actinide--oxygen--actinide bonds are increasingly replaced by actinide--oxygen--silicon bonds due to structural incorporation of Si. Possible implications of the formation of such colloids for environmental scenarios are discussed.

Ferromagnetism in certain alloys consisting of magnetic and nonmagnetic species can be activated by the presence of chemical disorder. This phenomenon is linked to an increase in the number of nearest-neighbor magnetic atoms and local variations in the electronic band structure due to the existence of disorder sites. An approach to induce disorder is through exposure of the chemically ordered alloy to energetic ions; collision cascades formed by the ions knock atoms from their ordered sites and the concomitant vacancies are filled randomly via thermal diffusion of atoms at room temperature. The ordered structure thereby undergoes a transition into a metastable solid solution. Here we demonstrate the patterning of highly resolved magnetic structures by taking advantage of the large increase in the saturation magnetization of Fe60Al40 alloy triggered by subtle atomic displacements. The sigmoidal characteristic and sensitive dependence of the induced magnetization on the atomic displacements manifests a sub-50 nm patterning resolution. Patterning of magnetic regions in the form of stripes separated by ∼ 40 nm wide spacers was performed, wherein the magnet/spacer/magnet structure exhibits reprogrammable parallel (↑/spacer/↑) and antiparallel (↑/spacer/↓) magnetization configurations in zero field. Materials in which the magnetic behavior can be tuned via ion-induced phase transitions may allow the fabrication of novel spin-transport and memory devices using existing lateral patterning tools.

The mechanism of selenium(IV) uptake by maghemite was investigated on both the macroscopic and the molecular level. Maghemite nanoparticles exhibited fast adsorption kinetics toward selenium(IV). Batch experiments showed a decreased sorption with increasing pH (3.5-11). Ionic strength variations (0.01 to 0.1 M NaCl) had no significant influence on selenium(IV) uptake. Electrophoretic mobility measurements revealed a significant shift toward lower values of the isoelectric point of maghemite upon selenium(IV) uptake, suggesting the formation of inner-sphere surface complexes. At the molecular level, using X-ray Absorption Fine-Structure Spectroscopy (EXAFS), the formation of both bidentate binuclear corner-sharing ((2)C) and bidentate mononuclear edge-sharing ((1)E) inner-sphere surface complexes was observed, with a trend toward solely (1)E complexes at high pH. The absence of a tridentate surface complex as observed for arsenic(III) and antimonite(III) might be due to the relatively small size of the Se(IV)O3 unit. These new spectroscopic results can be implemented in reactive transport models to improve the prediction of selenium migration behavior in the environment as well as its monitoring through its interaction with maghemite or maghemite layers at the surface of magnetite. Due to its chemical stability even at low pH and its magnetization properties allowing magnetic separation, maghemite is a promising sorbing phase for the treatment of Se polluted waters.

A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar(+) irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3 thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO3 surface are preferentially sputtered by Ar(+) ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO3 thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO3 thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.

The series of 4-center unsaturated chelate ligands A═B-C═D with redox activity to yield (-)A-B═C-D(-) in two steps has been complemented by two new combinations RNNC(R')E, E = O or S, R = R' = Ph. The ligands N-benzoyl-N'-phenyldiazene = L(O), and N-thiobenzoyl-N'-phenyldiazene = L(S), (obtained in situ) form structurally characterized compounds [(acac)(2)Ru(L)], 1 with L = L(O), and 3 with L = L(S), and [(bpy)(2)Ru(L)](PF(6)), 2(PF(6)) with L = L(O), and 4(PF(6)) with L = L(S) (acac(-) = 2,4-pentanedionato; bpy = 2,2'-bipyridine). According to spectroscopy and the N-N distances around 1.35 Å and N-C bond lengths of about 1.33 Å, all complexes involve the monoanionic (radical) ligand form. For 1 and 3, the antiferromagnetic spin-spin coupling with electron transfer-generated Ru(III) leads to diamagnetic ground states of the neutral complexes, whereas the cations 2(+) and 4(+) are EPR-active radical ligand complexes of Ru(II). The complexes are reduced and oxidized in reversible one-electron steps. Electron paramagnetic resonance (EPR) and UV-vis-NIR spectroelectrochemistry in conjunction with time-dependent density functional theory (TD-DFT) calculations allowed us to assign the electronic transitions in the redox series, revealing mostly ligand-centered electron transfer: [(acac)(2)Ru(III)(L(0))](+) ⇌ [(acac)(2)Ru(III)(L(•-))] ⇌ [(acac)(2)Ru(III)(L(2-))](-)/[(acac)(2)Ru(II)(L(•-))](-), and [(bpy)(2)Ru(III)(L(•-))](2+)/[(bpy)(2)Ru(II)(L(0))](2+) ⇌ [(bpy)(2)Ru(II)(L(•-))](+) ⇌ [(bpy)(2)Ru(II)(L(2-))](0). The differences between the O and S containing compounds are rather small in comparison to the effects of the ancillary ligands, acac(-) versus bpy.