1. InGaN quantum dots studied by correlative microscopy techniques for enhanced light-emitting diodes
- Author
-
Eva Monroy, Ioanna Dimkou, Edith Bellet-Amarlic, Enrico Di Russo, David Cooper, L. Rigutti, Pradip Dalapati, Adeline Grenier, Névine Rochat, and Jonathan Houard
- Subjects
Materials science ,Photoluminescence ,Photon ,Luminescence ,Cathodoluminescence ,Physics::Optics ,02 engineering and technology ,01 natural sciences ,law.invention ,Condensed Matter::Materials Science ,Correlative microscopy ,InGaN ,Laser-assisted atom probe tomography ,Quantum dots ,law ,0103 physical sciences ,General Materials Science ,Diode ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Laser ,Chemical species ,Quantum dot ,Optoelectronics ,0210 nano-technology ,business ,Light-emitting diode - Abstract
InGaN/GaN nanostructures form the active region of III-nitride emitters (light emitting diodes, laser diodes, single photon emitters) in the visible spectral range. In order to understand the optical performance of these nanostructures it is necessary to obtain a direct correlation of alloy distribution and optical features. With this purpose in mind, laser-assisted atom probe tomography (La-APT) is a unique tool to visualize the three-dimensional distribution of chemical species at the nanometer scale. Recent advances in this technique also offer the possibility of recording simultaneously the photoluminescence spectrum of the
- Published
- 2020