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In this paper, we study the effect of the actual, locally resolved, field emission area on electron emission characteristics of uniform planar conductive nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) field emitters. High resolution imaging experiments were carried out in a field emission microscope with a specialty imaging anode screen such that electron emission micrographs were taken concurrently with measurements of I-V characteristics. An automated image processing algorithm was applied to process the extensive imaging data sets and calculate the emission area per image. It was routinely found that field emission from as-grown planar (N)UNCD films was always confined to a counted number of discrete emitting centers across the surface, which varied in size and electron emissivity. It was established that the actual field emission area critically depends on the applied electric field and that the field emission area and overall electron emissivity improve with the sp 2 -fraction present in the film, irrespective of the original substrate roughness or morphology. Most importantly, when as-measured I-E characteristics were normalized by the electric field-dependent emission area, the resulting j-E curves demonstrated a strong kink and departed from the Fowler-Nordheim law, finally saturating at a value on the order of 100 mA/cm 2 . This value was nearly identical for all studied films regardless of substrate. It was concluded that the saturation value is specific to the intrinsic fundamental properties of (N)UNCD.