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Special attention has been focused on photo-imageable sol–gel hybrid (SGH) materials because of their synergetic effects, such as high photosensitivity and transparency, as well as mechanical and chemical durability resulting from the presence of polymer and silica networks in the hybrid structure. Photo-induced migration, which accompanies photopolymerization and photolocking in these materials, allows for the formation of convex micropatterns with a higher refractive index than the original film through exposure to UV radiation. Controlling the parameters affecting this photo-induced migration can permit modulation of the size and shape of such microstructures for the simple and cost-effective direct photofabrication of micro-optical elements, such as microlenses and microlens arrays. [ABSTRACT FROM AUTHOR]

Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides ( i.e. , MoS 2 ). Among ternary metal-oxy-chalcogenides, especially Bi 2 O 2 Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi 2 O 2 Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi 2 O 2 Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal-organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi 2 O 2 Se. The resulting Bi 2 O 2 Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi 2 O 2 Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm 2 /(V·s) and photoresponsivity of 45134 A/W.

Any transition toward an era of flexible electronics will have to overcome the mechanical limitations of materials. Specifically, the attainment of both strength and flexibility, which are generally mutually exclusive, is required including glass-like wear resistance, plastic-like compliance, and a high level of strain. Here, we fabricate a urethane-methacrylate-siloxane hybrid (UMSH) material. It is found that UMSH, with molecule-level hybridization of urethane linkage and methacrylate-siloxane conetworks, demonstrates ceramic-like high strength (574 MPa), yet polymer-like low modulus (8.42 GPa), and even high strain (6.3%) at fracture with excellent optical transparency. This combination of high strength, flexibility, and optical transparency indicates that this is a suitable material for glass substitution and can be used as a transparent flexible cover window for foldable display.

Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

We report an Ag nanofiber-embedded glass-fabric reinforced hybrimer (AgNF-GFRHybrimer) composite film as a reliable and high-performance flexible transparent conducting film. The continuous AgNF network provides superior optoelectronic properties of the composite film by minimizing transmission loss and junction resistance. In addition, the excellent thermal/chemical stability and mechanical durability of the GFRHybrimer matrix provides enhanced mechanical durability and reliability of the final AgNF-GFRHybrimer composite film. To demonstrate the availability of our AgNF-GFRHybrimer composite as a transparent conducting film, we fabricated a flexible organic light-emitting diode (OLED) device on the AgNF-GFRHybrimer film; the OLED showed stable operation during a flexing.

We report on the fabrication of a siloxane-encapsulated quantum dot (QD) film (QD-silox film), which exhibits stable emission intensity for over 1 month even at elevated temperature and humidity. QD-silox films are solidified via free radical addition reaction between oligosiloxane resin and ligand molecules on QDs. We prepare the QD-oligosiloxane resin by sol-gel condensation reaction of silane precursors with QDs blended in the precursor solution, forgoing ligand-exchange of QDs. The resulting QD-oligosiloxane resin remains optically clear after 40 days of storage, in contrast to other QD-containing resins which turn turbid and ultimately form sediments. QDs also disperse uniformly in the QD-silox film, whose photoluminescence (PL) quantum yield (QY) remains nearly unaltered under harsh conditions; for example, 85 °C/5% relative humidity (RH), 85 °C/85% RH, strongly acidic, and strongly basic environments for 40 days. The QD-silox film appears to remain equally emissive even after being immersed into boiling water (100 °C). Interestingly, the PL QY of the QD-silox film noticeably increases when the film is exposed to a moist environment, which opens a new, facile avenue to curing dimmed QD-containing films. Given its excellent stability, we envision that the QD-silox film is best suited in display applications, particularly as a PL-type down-conversion layer.

In this paper, we report flexible transparent conducting electrode (TCE) film using a silver grid (Ag grid)/silver nanowire (AgNW) hybrid structure (AG/NW-GFRHybrimer). The AG/NW-GFRHybrimer consists of an AgNW-embedded glass-fabric reinforced plastic film (AgNW-GFRHybrimer) and an electroplated Ag grid. The AgNW-GFRHybrimer is used as a flexible transparent substrate and a seed layer for electroplating. The Ag grid is fabricated via an all-solution-process; the grid pattern is formed using conventional photolithography, and Ag is deposited through electroplating. The AG/NW-GFRHybrimer exhibits excellent opto-electrical properties (transparency = 87%, sheet resistance = 13 Ω/□), superior thermal stability (250 °C for 720 min and 85 °C/85% RH for 100 h), and outstanding mechanical flexibility (bending radius = 1 mm for 2000 cycles). Finally, a touch-screen panel (four-wire resistive type) was fabricated using the AG/NW-GFRHybrimer to demonstrate its potential for use in actual optoelectronic applications.

We report vinyl-phenyl siloxane hybrid material (VPH) that can be used as a matrix for copper-clad laminates (CCLs) for high-frequency applications. The CCLs, with a VPH matrix fabricated via radical polymerization of resin blend consisting of sol-gel-derived linear vinyl oligosiloxane and bulky siloxane monomer, phenyltris(trimethylsiloxy)silane, achieve low dielectric constant (Dk) and dissipation factor (Df). The CCLs with the VPH matrix exhibit excellent dielectric performance (Dk = 2.75, Df = 0.0015 at 1 GHz) with stability in wide frequency range (1 MHz to 10 GHz) and at high temperature (up to 275 °C). Also, the VPH shows good flame resistance without any additives. These results suggest the potential of the VPH for use in high-speed IC boards.

An ultraviolet (UV) transparent and stable methyl-siloxane hybrid material was prepared by a facile sol-gel method. The transparency and stability of a UV-LED encapsulant is an important issue because it affects UV light extraction efficiency and long-term reliability. We introduced a novel concept for UV-LED encapsulation using a thermally curable oligosiloxane resin. The encapsulant was fabricated by a hydrosilylation of hydrogen-methyl oligosiloxane resin and vinyl-methyl siloxane resin, and showed a comparable transmittance to polydimethylsiloxane (PDMS) in the UVB (∼300 nm) region. Most remarkably, the methyl-siloxane hybrid materials exhibited long-term UV stability under light soaking in UVB (∼300 nm) for 1000 h.

Transparent electrodes that can maintain their electrical and optical properties stably against large mechanical deformations are essential in numerous applications of flexible and wearable electronics. In this paper, we report a comprehensive analysis of the electrical, optical, and mechanical properties of hybrid nanostructures based on graphene and metal nanotrough networks as stretchable and transparent electrodes. Compared to the single material of graphene or the nanotrough, the formation of this hybrid can improve the uniformity of sheet resistance significantly, that is, a very low sheet resistance (1 Ω/sq) with a standard deviation of less than ±0.1 Ω/sq, high transparency (91% in the visible light regime), and superb stretchability (80% in tensile strain). The successful demonstration of skin-attachable, flexible, and transparent arrays of oxide semiconductor transistors fabricated using hybrid electrodes suggests substantial promise for the next generation of electronic devices.

We report a flexible high-performance conducting film using an embedded copper nanowire transparent conducting electrode; this material can be used as a transparent electrode platform for typical flexible optoelectronic devices. The monolithic composite structure of our transparent conducting film enables simultaneously an outstanding oxidation stability of the copper nanowire network (14 d at 80 °C), an exceptionally smooth surface topography (R(rms) < 2 nm), and an excellent opto-electrical performances (Rsh = 25 Ω sq(-1) and T = 82%). A flexible organic light emitting diode device is fabricated on the transparent conducting film to demonstrate its potential as a flexible copper nanowire electrode platform.

We fabricated active single- and bilayer structure thin film transistors (TFTs) with aluminum or gallium doped (IZO:Al or IZO:Ga) and undoped indium zinc oxide (IZO) thin film layers using an aqueous solution process. The electrical performance and bias stability of these active single- and bilayer structure TFTs were investigated and compared to reveal the effects of Al/Gal doping and bilayer structure. The single-layer structure IZO TFT shows a high mobility of 19 cm(2)/V · s with a poor positive bias stability (PBS) of ΔVT + 3.4 V. However, Al/Ga doped in IZO TFT reduced mobility to 8.5-9.9 cm(2)/V · s but improved PBS to ΔVT + 1.6-1.7 V due to the reduction of oxygen vacancy. Thus, it is found the bilayer structure TFTs with a combination of bottom- and top-layer compositions modify both the mobility and bias stability of the TFTs to be optimized. The bilayer structure TFT with an IZO:X bottom layer possess high mobility and an IZO bottom layer improves the PBS.

We report a zirconium-phenyl siloxane hybrid material (ZPH) that can be used as a robust LED encapsulant. The ZPH encapsulant was fabricated via hydrosilylation-curing of sol-gel derived multifunctional (vinyl- and hydride-functions) siloxane resins containing phenyl-groups and Zr-O-Si heterometallic phase for achieving a high refractive index (n ≈ 1.58). In thermal aging, the ZPH LED encapsulant exhibited superior performances with a high optical transparency (∼88% at 450 nm) and exhibited high thermal stability (no yellowing at 180 °C for 1008 h), compared to a commercial LED encapsulant (OE-6630, Dow Corning Corporation). This suggests potential for ZPH to be a robust LED encapsulant.

Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

A novel ionic siloxane hybrid electrolyte was fabricated by thermal polymerization of iodide-oligosiloxane resin. The nanosized iodide-oligosiloxane was synthesized by a simple sol-gel condensation of 3-iodopropyltrimethoxysilane and diphenylsilanediol. It is found that the composition and concentration of the oligosiloxane used in the electrolyte affect the performance of the dye-sensitized solar cells (DSSCs). An optimized DSSC with the hybrid electrolyte using smaller molecular-sized oligosiloxane with a greater amount of iodide groups presented solar to electricity conversion efficiency of 5.2% at 1 sunlight (100 mW cm(-2)), which is comparable to that afforded by a liquid electrolyte.

Photocurable and highly condensed fluorinated methacrylate oligosiloxane, with a low dielectric constant (kappa = 2.54), was prepared by a nonhydrolytic sol-gel condensation reaction. The oligosiloxane resin was then spin-coated, photocured, and thermally baked in order to fabricate a fluorinated methacrylate hybrid material (FM hybrimer) thin film. This study investigated the application of this FM hybrimer film as a low-kappa passivation layer in LCD-based thin film transistors (TFT). It was found that a dielectric constant as low as kappa = 2.54 could be obtained, without introducing pores in the dense FM hybrimer films. This study compares FM hybrimer film characteristics with those required for passivation layers in LCD-TFTs, including thermal stability, optical transmittance, hydrophobicity, gap fill, and planarization effects as well as electrical insulation.

A highly condensed epoxy-oligosiloxane resin was synthesized using a sol-gel condensation reaction of (3-glycidoxypropyl)trimethoxysilane and diphenylsilanediol in the presence of solvent. A higher degree of condensation and a larger molecular size of oligosiloxanes were achieved compared to a condensation reaction without the addition of a solvent. The epoxy-hybrimer coating film was fabricated by the spin coating and thermal curing of the synthesized oligosiloxane resin. The leakage current density and the dielectric constant decreased from 25.9 to 7.6 nA cm(-2) and from 3.16 to 3.03, respectively, by using the solvent in the preparation. The hybrimer coating film of a highly condensed oligosiloxane resin had a high transmittance of over 90% in a wavelength between 300 and 800 nm. Thus, the epoxy-hybrimer coating film can be utilized as the passivation layer in the thin-film transistor.

Active protein micropatterns and microarrays made by selective localization are popular candidates for medical diagnostics, such as biosensors, bioMEMS, and basic protein studies. In this paper, we present a simple fabrication process of thick (approximately 20 microm) protein micropatterning using capillary force lithography with bifunctional sol-gel hybrid materials. Because bifunctional sol-gel hybrid material can have both an amine function for linking with protein and a methacryl function for photocuring, proteins such as streptavidin can be immobilized directly on thick bifunctional sol-gel hybrid micropatterns. Another advantage of the bifunctional sol-gel hybrid materials is the high selective stability of the amine group on bifunctional sol-gel hybrid patterns. Because amine function is regularly contained in each siloxane oligomers, immobilizing sites for streptavidin are widely distributed on the surface of thick hybrid micropatterns. The micropatterning processes of active proteins using efficient bifunctional sol-gel hybrid materials will be useful for the development of future bioengineered systems because they can save several processing steps and reduce costs.

In this paper, we fabricated a fluorinated organic-inorganic hybrid mold using a nonhydrolytic sol-gel process which can produce a crack-free mold without leaving any trace of solvent. No special chemical treatment of a release layer is needed because the fluorinated hybrid mold has fluorine molecules in the backbone. The other advantages of the hybrid mold are thermal stability over 300 degrees C. The hybrid mold produced from UV nanoimprint lithography (UV-NIL) was used as a mold for the next UV-NIL and soft lithography without requiring use of an antisticking layer. Various nanometer scale patterns including sub-100 nm patterns could be obtained from the hybrid mold. Nanopatterning processes using this low-cost mold are useful because they preserve the expensive original master.

We use a first-principles calculation and small-angle neutron scattering (SANS) to investigate the mechanism and the nanosize products of the sol-gel reaction with diphenylsilanediol (DPD) and 3-methacryloxypropyltrimethoxysilane (MEMO) precursors in synthesizing a hybrid waveguide material. It is predicted that switching between a DPD hydroxyl and a MEMO methoxy with a reaction rate of 6.8 x 10(-6) s(-1) at 300 K is the fastest process for the first reaction step, thus generating diphenylmethoxysilanol (DPM) and 3-methacryloxypropyldimethoxysilanol (MEDO) as products. However, we determine that this reaction pathway could be modified by the presence of the H2O released from a catalyst such as Ba(OH)2.H2O. Next, switching between the DPM hydroxyl and the MEDO methoxy is followed to generate diphenyldimethoxysilane (DPDM) and 3-methacryloxypropylmethoxysilanediol (MEMDO). However, condensation between a MEMDO hydroxyl and a DPDM methoxy is found to be most favorable for the third reaction step, which generates the DPDM-MEMDO dimer and CH3OH molecule as products. In a similar fashion, a DPDM methoxy of the DPDM-MEMDO dimer can condense with a MEMDO hydroxyl of the second DPDM-MEMDO dimer to increase the chain, but its reaction rate of 2.8 x 10(-11) s(-1) is predicted to be about 5 times smaller than that between a DPDM methoxy and a MEMDO hydroxyl. This implies that the reaction rate for the larger nanostructures becomes smaller. Additionally, our SANS measurements determine that the final products from our sol-gel reaction are on the nanometer scale, at sizes from 1.76 to 2.36 nm.