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Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN deposition time. Furthermore, the evolution of the contact angle of a droplet of water located on the surface of these GaN epitaxial layers with the deposition time was investigated. We observe a transition from the hydrophilic regime to the hydrophobic regime for deposition times longer than 15 min. The observed dependence of GaN hydrophobicity on its degree of porosity is discussed and explained in the framework of the Cassie-Baxter model.

Scintillator materials are used as detectors in the ray imaging techniques for medical diagnosis. Because the ideal medical scintillator material does not exist, many efforts are being made to find new materials that satisfy a greater number of properties. Here, the synthesis conditions of Pr:KGd(PO 3 ) 4 nanocrystals by the modified Pechini method are optimized to obtain a single crystalline phase of those that form the polymorphism of KGd(PO 3 ) 4 . The interest lies in the type III phase because less quenching by Pr 3+ concentration is expected. By performing transmittance measurements and because of the wide transparency window of the type III KGd(PO 3 ) 4 host, the 3 H 4 → 5d 1 absorption transition of Pr 3+ has been observed in the vacuum ultraviolet spectral range. After creating electron-hole pairs in the host due to the excitation of the material by X-ray radiation, the bands corresponding to the 5d 1 → 3 H 4 , 3 H 5 , 3 H 6 and 5d 1 → 3 F 3 , 3 F 4 , 1 G 4 transitions of Pr 3+ have been observed in the near-visible spectral range, being these 5d → 4f transitions interesting for scintillation applications. Therefore, the type III Pr:KGd(PO 3 ) 4 nanocrystals allow the conversion from high-energy radiation to visible or near-visible light., Competing Interests: The authors declare no competing financial interest.

We studied the temperature-dependent luminescence of GdVO4 nanoparticles co-doped with Er(3+) (1 mol %) and Yb(3+) (20 mol %) and determined their thermal sensing properties through the fluorescence intensity ratio (FIR) technique. We also analyzed how a silica coating, in a core-shell structure, affects the temperature sensing properties of this material. Spectra were recorded in the range of biological temperatures (298-343 K). The absolute sensitivity for temperature determination calculated for the core-shell nanoparticles is double the one calculated for bare nanoparticles, achieving a thermal resolution of 0.4 K. Moreover, silica-coated nanoparticles show good dispersibility in different solvents, such as water, DMSO, and methanol. Also, they show good luminescence stability without interactions with solvent molecules. Furthermore, we also observed that the silica coating shell prevents progressive heating of the nanoparticles during prolonged excitation periods with the 980 nm laser, preventing effects on their thermometric applications.

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH(3) gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapor-solid-solid seeding and subsequent growth of porous GaN. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a high-quality reduced workfunction contact that allows exceptionally low contact resistivities. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission.

Europium-doped lanthanum oxide (5 mol % Eu(3+):La(2)O(3)) was prepared by calcining europium-doped lanthanum hydroxide (5 mol % Eu(3+):La(OH)(3)) previously synthesized by a simple hydrothermal method. Interestingly, we observed different emission Eu(3+) signatures depending on the phase of the host (lanthanum oxide or hydroxide) by cathodoluminescence. Taking into account that lanthanum oxide easily rehydroxylates in air, for the first time, we report the use of cathodoluminiscence as a novel characterization technique to follow the lanthanum oxide rehydroxylation reaction versus time according to different annealing procedures. Additionally, differential thermal-thermogravimetric analysis, infrared spectroscopy, and X-ray diffraction techniques were used to identify the phases formed from the Eu(3+):La(OH)(3) depending on temperature and to study the evolution of La(2)O(3) to La(OH)(3) versus time. The results showed that the higher the temperature and the longer the annealing time, the higher the resistance to rehydroxylation of the Eu(3+):La(2)O(3) sample.