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The formation of electron beams and their transport in a mirror-type guiding magnetic field are modeled numerically for two types of an experimental electro-optical system in the accelerating diode of an electron source with a plasma low-pressure arc-discharge emitter. The observed behavior of currents is interpreted and the limiting values of currents transported in the system are obtained.

To provide basic operations of semiconductor and radiation materials technologies, a multipurpose implanter with intense ion beams was developed at the Institute of Nuclear Physics. The generated beamparameters are as follows: ions are H+, O+; C+; the ion energy is up to 200 keV; the beam current is up to 2 mA; and the implantation mode is continuous. The size of the target to be processed can reach 76 × 76 mm2. During the implanter operation, the target chamber vacuum reaches 10−4 Pa. The entire process of target irradiation is fully automated.