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Your search keyword '"Yanfeng Yin"' showing total 2 results
Start Over Author "Yanfeng Yin" Publisher aip publishing llc
2 results on '"Yanfeng Yin"'

1. Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

Author

Wanying Xia, Xianwen Sun, Yanfeng Yin, Caihong Jia, Guoqiang Li, and Weifeng Zhang

Subjects
Physics, QC1-999
Abstract

NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.

Published
2020
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2. Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

Author

Guoqiang Li, Xianwen Sun, Yanfeng Yin, Wanying Xia, Weifeng Zhang, and Caihong Jia

Subjects
Protein filament, Resistive touchscreen, Materials science, Condensed matter physics, Polarity (physics), Resistive switching, Non-blocking I/O, Relaxation (NMR), General Physics and Astronomy, Electron trapping, Low resistance, lcsh:Physics, lcsh:QC1-999
Abstract

NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.

Published
2020

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